IGBT AMP Search Results

SCR Inverter

Contextual Info: SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: • 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT.  NEAR HERMETIC PACKAGE.  USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS100R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

6A243

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS150R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

IGPT CIRCUIT

Abstract: IGBT Gate Drive Optocoupler IGBT desaturation IC 3160 hcpl 3160 power electronic transistor IGPT HCPL-3160
Contextual Info: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback

IGBT Gate Drive Optocoupler

Abstract: IGPT CIRCUIT controller for PWM with IGBT IGBT desaturation HCPL-3160 HCPL316
Contextual Info: H 2.0 Amp IGBT Gate Drive Optocoupler with Integrated Over-current Protection and Fault Feedback Preliminary Technical Data HCPL-3160 Features Description • Integrated IGBT Desaturation Protection • Integrated Optically Isolated IGBT Fault Status Feedback

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

M57962AL

Abstract: DATA SHEET OF IGBT IGBT control circuit igbt welding igbt wiring Igbt 15kV 600A M57962 "IGBT Driver" IGBT with V-I characteristics OPTO COUPLER
Contextual Info: QC962 Hybrid Integrated IGBT Driver QC962 is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output with the opto-coupler.

sic marking e6

Abstract: sic marking e7
Contextual Info: SENSITRON SEMICONDUCTOR SPM1002 Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE  FAST SWITCHING 3RD GENERATION IGBT 

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G180-060D TECHNICAL DATA DATASHEET 4245, REV - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 180 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

GP20N

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Cltannel IGBT MGP20N40CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) T his Logic Level Insulated G ate Bipolar Transistor (IGBT)

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

Contextual Info: MITSUBISHI HYBRID ICs M57957L HYBRID 1C FOR DRIVING IGBT MODULES Hybrid Integrated Circuit For Driving IGBT Modules Description: M57957L is a hybrid integrated cir­ cuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates

IGBT 48V 200A

Contextual Info: SPM6G50-60 SENSITRON SEMICONDUCTOR TECHNICAL DATA Custom Power Hybrid Three-Phase IGBT BRIDGE, 600 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED PARAMETER SYMBOL MI N TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage

Full-bridge inverter

Abstract: SCR gate Control IC scr dc motor forward reverse control SCR 100A
Contextual Info: QIA0620004 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com 7-Pack IGBT Module 200 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an

LIN opto isolator

Abstract: SPM6G080-060D IC 4098
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

Sensitron Semiconductor

Abstract: 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.3 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

150A SCR

Abstract: Full-bridge inverter QIA0615007 class C inverter SCR 7pack igbt module SCR 50A Full-bridge forward inverter SCR gate Control IC SCR 100A SCR Gate Drive turn off
Contextual Info: QIA0615007 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com 7-Pack IGBT Module 150 Amperes / 600 Volts Description: Powerex 7-Pack IGBT power module is configured as a full-bridge inverter with an additional IGBT switch and an

IGBT desaturation

Abstract: SPM6G060-120D IGBT 50 amp 1200 volt
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA Datasheet 4165, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

d2 diode series

Abstract: DIODE D2 diode Vfm igbt module QIQ0660001 diode 600a
Contextual Info: QIQ0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 IGBT H-Series Chopper Hermetic Module 600 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors

IGBT 600a

Abstract: QIS0660001 IC600A igbt 600a output ac
Contextual Info: QIS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single IGBT H-Series Hermetic Module 600 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors

igbt control servo motor

Contextual Info: QIR0620001 Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 724 925-7272 www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT

IC53A

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

LIN opto isolator

Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE