IGBT 600V 400A SINGLE HALF BRIDGE Search Results

FZ1600R12KF4

Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
Contextual Info: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC

1.2397

Abstract: DIM400WHS12-E000 4800A
Contextual Info: DIM400WHS12-E000 DIM400WHS12-E000 Half Bridge IGBT Module PDS5664-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM400WHS12-E000 DIM400WHS12-E000 Half Bridge IGBT Module PDS5664-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DIM400WHS12-A000

Contextual Info: DIM400WHS12-A000 DIM400WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue DS5689-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5689-3.0 May 2004 KEY PARAMETERS VCES typ

DIM400WHS12-A000

Contextual Info: DIM400WHS12-A000 Half Bridge IGBT Module DS5689-3.1 July 2007 LN25350 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand KEY PARAMETERS VCES VCE (sat) (typ) IC (max) IC(PK) (max) 1200V 2.2 V 400A 800A Lead Free construction

DIM400WHS12-A000

Contextual Info: DIM400WHS12-A000 DIM400WHS12-A000 Half Bridge IGBT Module Replaces December 2003 version, issue DS5689-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5689-2.0 February 2004 KEY PARAMETERS VCES typ

Contextual Info: DIM400WHS12-A000 DIM400WHS12-A000 Half Bridge IGBT Module DS5689-1.3 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 400A

igbt 600v 400A single half bridge

Abstract: 4800a
Contextual Info: DIM400WHS12-H000 DIM400WHS12-H000 Fast Half Bridge IGBT Module Target Infomation DS5626-1.3 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate KEY PARAMETERS VCES

1.2397

Contextual Info: DIM400BSS12-E000 DIM400BSS12-E000 Single Switch IGBT Module PDS5705-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DS5306-2

Abstract: IGBT ac switch circuit AN4502 AN4503 AN4505 AN4506 GP400LSS12 AN5000 principle of rating
Contextual Info: GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200V Rating ■ 400A Per Module DS5306-2.3 November 2000

1.2397

Abstract: DIM400BSS12-E000
Contextual Info: DIM400BSS12-E000 DIM400BSS12-E000 Single Switch IGBT Module PDS5705-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

TLP250 MOSFET DRIVER application note

Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
Contextual Info: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation

DIM400BSS12-A000

Abstract: dynex
Contextual Info: DIM400BSS12-A000 DIM400BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue DS5672-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5672-4.0 May 2004 KEY PARAMETERS VCES typ

Contextual Info: DIM400BSS12-A000 DIM400BSS12-A000 Single Switch IGBT Module Replaces DIM400LSS12-A000 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5672-2.3 December 2003 KEY PARAMETERS VCES typ VCE(sat)* (max)

DIM400BSS12-A000

Contextual Info: DIM400BSS12-A000 Single Switch IGBT Module DS5672-4.1 June 2007 LN25349 FEATURES 10 s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK) (max) 1200V 2.2 V 400A 800A *(Measured at the power bus-bars and not the auxiliary

bi-directional switches IGBT

Abstract: DIM400PHM17-A000
Contextual Info: . DIM400PHM17-A000 Half Bridge IGBT Module DS5561-1.3 May 2008 LN26122 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES VCE (sat) * (typ) IC (max) IC(PK)

half bridge circuit diagram

Contextual Info: . DIM400PHM17-A000 Half Bridge IGBT Module DS5561-1.2 JULY 2005 LN24089 FEATURES • 10µs Short Circuit Withstand • High Thermal Cycling Capability • Non Punch Through Silicon • Isolated MMC Base with AlN Substrates • 6kV Isolation Voltage • Lead Free Construction

Contextual Info: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces March 2003, version DS5534-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5534-4.0 July 2003 KEY PARAMETERS VCES typ VCE(sat)*

DIM400WHS17-E000

Contextual Info: DIM400WHS17-E000 DIM400WHS17-E000 Half Bridge IGBT Module Replaces December 2003 version, issue PDS5665-2.1 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand PDS5665-3.1 February 2004

Contextual Info: DIM400WLS12-A000 DIM400WLS12-A000 IGBT Chopper Module - Lower Arm Control DS5747-2.0 May 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V

DIM400WKS12-A000

Contextual Info: DIM400WKS12-A000 DIM400WKS12-A000 IGBT Chopper Module - Upper Arm Control DS5779-1.0 May 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V

transistor a 949

Contextual Info: DIM400BSS12-H000 DIM400BSS12-H000 Fast Single Switch IGBT Module Target Infomation DS5628-1.3 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate KEY PARAMETERS

12v to 1000v inverters circuit diagrams

Abstract: bi-directional switches IGBT DIM400LSS12-A000 6x55 diode IC LM 2003
Contextual Info: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces June 2002, version DS5534-2.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5534-3.0 March 2003 KEY PARAMETERS VCES typ VCE(sat)*

DIM400LSS12-A000

Contextual Info: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5534-1.4 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5534-1.4 May 2002 KEY PARAMETERS