IGBT 40A 600V Search Results

FGH40N60

Contextual Info: FGH40N60SF tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

FGH40N60SFD

Abstract: FGH40N60SFDTU
Contextual Info: FGH40N60SFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

Contextual Info: FGI40N60SF tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.3V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

Contextual Info: FGH40N60UFD tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

Contextual Info: FGH40N60UF tm 600V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

Contextual Info: FGH40N65UFD tm 650V, 40A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 40A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for

FGH40N60SMDF

Contextual Info: FGH40N60SMDF tm 600V, 40A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE sat =1.9V(Typ.) @ IC = 40A

GW40NC60WD

Abstract: STGW40NC60WD JESD97 icl 298
Contextual Info: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

STGW40NC60WD

Abstract: icl 298 HF IGBT GW40NC60WD ic MARKING QG JESD97
Contextual Info: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

Contextual Info: APT20GT60KR 600V 40A Thunderbolt IGBT TO-220 IGBT™ The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Contextual Info: APT20GT60KR 600V 40A Thunderbolt IGBT TO-220 IGBT™ The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Contextual Info: APT20GT60KR APT20GT60KR 600V 40A Thunderbolt IGBT™ TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Contextual Info: APT20GT60BR APT20GT60BR 600V 40A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Contextual Info: APT20GT60BR 600V 40A Thunderbolt IGBT TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

APT30GT60AR

Contextual Info: APT30GT60AR 600V 40A Thunderbolt IGBT™ TO-3 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Contextual Info: APT20GT60BR 600V 40A Thunderbolt IGBT TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

IRGPC40

Contextual Info: INTERNAT ION AL RECTIFIER 4055452 QGlübai 1 • 2bE D Data Sheet No. PD-9.665 t - 3 ^ - 0 3 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC40 600V, 40A FEATURES 600V, 40A, TO-247AC IGBT International Rectifier's IRG series of Insulated Gate

GW39NC60

Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■

schematic diagram "induction heating"

Abstract: schematic diagram induction heating diagram induction schematic diagram induction
Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■

W39NC60VD

Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

GW39NC60

Abstract: GW39NC60VD JESD97 STGW39NC60VD
Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT PRELIMINARY DATA General features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

20N60C3DR

Abstract: 20N60C3D HGTG20N60C3DR 20n60c3 INTEPOWER LD26 RURP1560
Contextual Info: HGTG20N60C3DR 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

g20n60b3d

Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060
Contextual Info: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC