IGBT 300V 30A DATASHEET Search Results

FGPF30N30

Contextual Info: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution

C1220A

Abstract: igbt 300V 10A datasheet FGPF30N30
Contextual Info: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution

igbt 300V 10A datasheet

Abstract: igbt 200v 20a FGFP30N30DTU FGPF30N30D RG601 igbt 200v 30a
Contextual Info: FGPF30N30D 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential.

igbt 300V 10A datasheet

Abstract: FGPF30N30TTU
Contextual Info: FGPF30N30T tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

igbt 300V 30A

Abstract: igbt 300V 10A datasheet FGPF30N30TD igbt 200v 20a
Contextual Info: FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Contextual Info: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.4V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

igbt 200v 30a

Abstract: FGPF50N30T FGPF50N30TTU
Contextual Info: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

SME6G30US60

Abstract: APPLICATION NOTES IGBT
Contextual Info: Preliminary SME6G30US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.0 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS * General Purpose Inverters * UPS, CVCF * Robotics , Servo Controls

Contextual Info: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls

SGH30N60RUFD

Contextual Info: CO-PAK IGBT SGH30N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls

Contextual Info: CO-PAK IGBT SGF30N60RUFD FEATURES TO-3PF * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls

Contextual Info: Preliminary SME6G30US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.0 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS * General Purpose Inverters * UPS, CVCF * Robotics , Servo Controls

SGF30N60RUFD

Contextual Info: CO-PAK IGBT SGF30N60RUFD FEATURES TO-3PF * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls

SGL30N60RUFD

Contextual Info: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls

smps igbt

Abstract: FFH30US30S igbt 150v 30a
Contextual Info: FGH50N3 300 V SMPS IGBT April 2013 FGH50N3 300 V SMPS IGBT General Description Features Using Fairchild 's planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This

gv 275 diode

Abstract: SMC7G30US60
Contextual Info: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit

SMC7G30US60 XX2

Abstract: A OF IGBT Fast Recovery Rectifier, 300V XX1
Contextual Info: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit

SMC6G30US60

Contextual Info: Preliminary SMC6G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in 3 Rectifier Circuit & k Package code : 21-PM-BA

SME6G30US60

Contextual Info: Preliminary SME6G30US60 COMPACT IGBT MODULE FEATURES * High Speed Switching * Low Conduction Loss : VCE sat = 2.0 V (typ) * Fast & Soft Anti-Parallel FWD * Short circuit rated : Min 10uS atTc=100°C APPLICATIONS * * * * Package code : 17-PM-CA General Purpose Inverters

FGPF90N30

Abstract: FGFP90N30TU
Contextual Info: FGPF90N30 tm 300V, 90A PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF90N30 offers the optimum solution for PDP applications where low-condution

SGH30N60RUFD

Abstract: RUFD
Contextual Info: IGBT SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general

SGH30N60RUF

Abstract: Transistor GE 67
Contextual Info: IGBT SGH30N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general

FMC7G30US60

Contextual Info: IGBT FMC7G30US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

4830A

Contextual Info: SGH30N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,