IGBT 200V 30A Search Results

diode mur

Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Contextual Info: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.

igbt 300V 10A datasheet

Abstract: FGPF30N30TTU
Contextual Info: FGPF30N30T tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Contextual Info: FGPF50N30T tm 300V, 50A PDP IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.4V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGFP30N45TTU

Abstract: FGPF30N45T igbt 200v 30a FGPF30N45
Contextual Info: FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description • High Current Capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

igbt 300V 30A

Abstract: igbt 300V 10A datasheet FGPF30N30TD igbt 200v 20a
Contextual Info: FGPF30N30TD tm 300V, 30A PDP Trench IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

Contextual Info: FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description • High Current Capability • Low saturation voltage: VCE sat =1.55V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

FGPF30N45T

Abstract: FGPF30N45TTU GENERAL SEMICONDUCTOR MARKING UJ
Contextual Info: FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description • High Current Capability Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

SGH30N60RUFD

Contextual Info: CO-PAK IGBT SGH30N60RUFD FEATURES TO-3P * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls

SGF30N60RUFD

Contextual Info: CO-PAK IGBT SGF30N60RUFD FEATURES TO-3PF * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls

Contextual Info: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls

SGL30N60RUFD

Contextual Info: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ Ic=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls

Contextual Info: CO-PAK IGBT SGF30N60RUFD FEATURES TO-3PF * Short Circuit rated 10µs @TC=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ IC=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) C APPLICATIONS * AC & DC Motor controls

FGPF30N30

Contextual Info: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution

C1220A

Abstract: igbt 300V 10A datasheet FGPF30N30
Contextual Info: FGPF30N30 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30 offers the optimum solution for PDP applications where low-condution

igbt 300V 10A datasheet

Abstract: igbt 200v 20a FGFP30N30DTU FGPF30N30D RG601 igbt 200v 30a
Contextual Info: FGPF30N30D 300V, 30A PDP IGBT Features General Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF30N30D offers the optimum solution for PDP applications where lowcondution loss is essential.

RURP3020

Abstract: TA09645
Contextual Info: RURP3020 Data Sheet January 2000 File Number 2777.5 30A, 200V Ultrafast Diode Features The RURP3020 is an ultrafast diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted,

DSA0039858

Abstract: BAZ-3882-NCAZ RURH3020CC TA09645
Contextual Info: RURH3020CC Data Sheet January 2000 File Number 2773.4 30A, 200V Ultrafast Dual Diode Features The RURH3020CC is an ultrafast dual diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated,

rurg3020c

Abstract: ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES RURG3020CC TA09645
Contextual Info: RURG3020CC Data Sheet January 2000 File Number 3552.3 30A, 200V Ultrafast Dual Diode Features The RURG3020CC is an ultrafast dual diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

tc122 25

Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060

igbt 200v 20a

Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900

Contextual Info: SGH30N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10|is @ Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ lc=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) APPLICATIONS * * * * * AC & DC Motor controls

Contextual Info: Preliminary SGH30N60RU FD FEATURES CO-PAK IGBT TO-3P * Short Circuit rated 10uS @ Tc=100”C * High Speed Switching * Low Saturation Volatge : V CE sat = 2.0 V @ lc=30A * High Input Impedance * CO-PAK, IGBT with FRD :T rr = 50nS (Typ) APPLICATIONS * AC & DC Motor controls

Contextual Info: CO-PAK IGBT SGL30N60RUFD FEATURES TO-264 * Short Circuit rated 10uS @Tc=100°C * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V @ lc=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50nS (Typ) APPLICATIONS * * * * * AC & DC Motor controls

Contextual Info: SGF30N60RUFD FEATURES CO-PAK IGBT TO-3PF * Short Circuit rated 10|is @ Tc=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=30A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) 1 APPLICATIONS / * * * * * AC & DC Motor controls