TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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CUHS20S60
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Toshiba Electronic Devices & Storage Corporation
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H |
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CUHS20F60
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Toshiba Electronic Devices & Storage Corporation
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H |
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CUHS15S60
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Toshiba Electronic Devices & Storage Corporation
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H |
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CUHS15F60
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Toshiba Electronic Devices & Storage Corporation
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H |
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