IFS75B12N3E4_B31 Search Results
IFS75B12N3E4_B31 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IFS75B12N3E4B31BOSA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD IGBT LOW PWR ECONO | Original | 516.73KB |
IFS75B12N3E4_B31 Price and Stock
Infineon Technologies AG IFS75B12N3E4B31BOSA1IGBT MOD 1200V 150A 385W |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IFS75B12N3E4B31BOSA1 | Tray | 10 |
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IFS75B12N3E4B31BOSA1 | Tray | 12 Weeks | 10 |
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IFS75B12N3E4B31BOSA1 | 13 Weeks | 10 |
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IFS75B12N3E4B31BOSA1 | 2,511 |
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Infineon Technologies AG IFS75B12N3E4_B31IGBT Modules MIPAQ BASE 1200V 75A |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IFS75B12N3E4_B31 |
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IFS75B12N3E4_B31 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B31 |
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IFS75B12N3E4 | |
474F3Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt |
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IFS75B12N3E4 E1322 FF326DC FC26E1 2313F D36134 1231423567896AB 54F36C 4112CD3567896BE 474F3 | |
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B31 |
Original |
IFS75B12N3E4 | |
IFS75B12N3E4_B31Contextual Info: Technische Information / technical information IFS75B12N3E4_B31 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt |
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IFS75B12N3E4 IFS75B12N3E4_B31 | |
Contextual Info: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: |
Original |
IGC70T120T8RM L7673U, L7673O, | |
Contextual Info: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: |
Original |
IGC70T120T8RM L7673U, L7673O, | |
IFS75B12N3E4Contextual Info: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology low switching losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: |
Original |
IGC70T120T8RM L7673U, L7673O, IFS75B12N3E4 |