IFM VS 0100 Search Results

IGBT abb

Abstract: abb 5sns 0100w120000 IGBT abb datasheets 5SNS 0100W120000 ABB IGBT
Contextual Info: VCE IC = = 1200 V 100 A IGBT Module LoPak3 NPT 5SNS 0100W120000 • • • • • Doc. No. 5SYA1511-00 May. 01 Low-loss, rugged IGBT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package Industry standard package

5SNS0100W120100

Abstract: 5SNS 0100W120100 0100W
Contextual Info: VCE IC = = 1200 V 100 A IGBT Module LoPak3 SPT 5SNS 0100W120100 PRELIMINARY • • • • • Doc. No. 5SYA1522-01 May. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless package

HRU0103C

Contextual Info: HRU0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0071-0100Z Rev.1.00 Aug.29.2003 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Ultra small Resin Package URP is suitable for surface mount design. Ordering Information

HRC0103C

Contextual Info: HRC0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0069-0100Z Previous: ADE-208-1598 Rev.1.00 Aug.29.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design.

HRD0103C

Contextual Info: HRD0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0070-0100Z Previous: ADE-208-1614 Rev.1.00 Aug.29.2003 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Super small Flat Package (SFP) is suitable for surface mount design.

HRC0201A

Contextual Info: HRC0201A Silicon Schottky Barrier Diode for Rectifying REJ03G0618-0100 Previous: ADE-208-1559 Rev.1.00 May 17, 2005 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.

HRL0103C

Abstract: hrl0103
Contextual Info: HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0100 Rev.1.00 Aug 19, 2004 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Extremely small Flat Package EFP is suitable for surface mount design.

HSC119

Contextual Info: HSC119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0188-0100Z Previous: ADE-208-615 Rev.1.00 Mar.22.2004 Features • Low capacitance. (C = 2.0 pF max) • Short reverse recovery time. (trr = 3.0 ns max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

HSN278WK

Abstract: PUSF0003ZA-A SC-89
Contextual Info: HSN278WK Silicon Epitaxial Schottky Barrier Diode for Detector REJ03G0611-0100 Previous: ADE-208-1524 Rev.1.00 Sep 13, 2005 Features • Low forward voltage, Low capacitance. • Miniature Flat Lead Package (MFPAK) is suitable for surface mount design. Ordering Information

gmZ2A

Abstract: Genesis gmZ2A DAT-0007-B Tvga gmFC1A gmz2 Genesis Microchip osd GENESIS
Contextual Info: DATA SHEET gmZ2A DAT-0007-B June 1999 Genesis Microchip 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 1871 Landings Drive •Mountain View •CA •USA •94043 •Tel: (650) 428-4277 •Fax: (650) 428-4288

gmZ2A

Abstract: gmFC1A GMZ3 Genesis gmZ2A GENESIS 1100 Genesis microchip dat Genesis Microchip osd tvga GENESIS
Contextual Info: DATA SHEET gmZ3A DAT-1009-A September 1999 Genesis Microchip 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 1871 Landings Drive •Mountain View •CA •USA •94043 •Tel: (650) 428-4277 •Fax: (650) 428-4288

Contextual Info: HSL278 Silicon Schottky Barrier Diode for Detector REJ03G0606-0100 Previous: ADE-208-1564 Rev.1.00 Apr 20, 2005 Features • Low forward voltage, Low capacitance. • Extremely small Flat Lead Package (EFP) is suitable for surface mount design. Ordering Information

031pf

Contextual Info: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with

IS-136

Abstract: MAX2369 MAX2369EGM VCO work at 15GHZ 780MHZ
Contextual Info: 19-1924; Rev 1; 10/01 Complete Dual-Band Quadrature Transmitter The MAX2369 takes advantage of the serial bus to set modes such as charge-pump current, high or low sideband injection, and IF/RF gain balancing. It is packaged in a small 7mm ✕ 7mm 48-pin QFN package with

Contextual Info: Preliminary RKH0160AKU Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G1893-0100 Rev.1.00 Feb 04, 2010 Features • Short reverse recovery time enable fast switching.  Ultra small Resin Package TURP-FM is suitable for compact and high-density surface mount design.

800MHz CDMA Handset complete Circuit Diagram

Abstract: IC 566 vco 56638 800MHz CDMA Handset Circuit Diagram 2.4GHz Cordless Phone circuit diagram 566 vco diode varactor B11 MAX2360 MAX2360ECM MAX2362
Contextual Info: 19-1635; Rev 0; 1/00 KIT ATION EVALU E L B A IL AVA Complete Dual-Band Quadrature Transmitters Features ♦ Dual-Band, Triple-Mode Operation ♦ +7dBm Output Power with -54dBc ACPR ♦ 100dB Power Control Range ♦ Supply Current Drops as Output Power Is Reduced

IC 566 vco

Abstract: 2.4GHz Cordless Phone circuit diagram SAW FILTER 130MHz 800MHz CDMA Handset complete Circuit Diagram 800MHz CDMA Handset Circuit Diagram diode varactor B11 566 vco MAX2366 MAX2366EGM MAX2367
Contextual Info: 19-1780; Rev 0; 7/00 KIT ATION EVALU E L B A IL AVA Complete Dual-Band Quadrature Transmitters Features ♦ Dual-Band, Triple-Mode Operation ♦ +7dBm Output Power with -54dBc ACPR ♦ 100dB Power Control Range ♦ Supply Current Drops as Output Power Is Reduced

IC 566 vco

Abstract: MAX2366 MAX2366EGM MAX2367 MAX2367EGM MAX2368 MAX2368EGM
Contextual Info: 19-1780; Rev 0; 7/00 KIT ATION EVALU E L B A IL AVA Complete Dual-Band Quadrature Transmitters Features ♦ Dual-Band, Triple-Mode Operation ♦ +7dBm Output Power with -54dBc ACPR ♦ 100dB Power Control Range ♦ Supply Current Drops as Output Power Is Reduced

800MHz CDMA Handset Circuit Diagram

Abstract: IC 566 vco MAX2360 MAX2360ECM MAX2362 MAX2362ECM MAX2364 MAX2364ECM
Contextual Info: 19-1635; Rev 1; 10/00 KIT ATION EVALU LE B A IL A AV Complete Dual-Band Quadrature Transmitters ♦ Dual-Band, Triple-Mode Operation ♦ +7dBm Output Power with -54dBc ACPR ♦ 100dB Power Control Range ♦ Supply Current Drops as Output Power Is Reduced ♦ Dual Synthesizer for IF and RF LO

dac 809

Contextual Info: 19-1780; Rev 0; 7/00 KIT ATION EVALU E L B A IL AVA Complete Dual-Band Quadrature Transmitters Features ♦ Dual-Band, Triple-Mode Operation ♦ +7dBm Output Power with -54dBc ACPR ♦ 100dB Power Control Range ♦ Supply Current Drops as Output Power Is Reduced

800MHz CDMA Handset Circuit Diagram

Abstract: max9876 cs 1694 EQUIVALENT
Contextual Info: 19-2013; Rev 0; 5/01 KIT ATION EVALU E L B A IL AVA Complete Dual-Band Quadrature Transmitters Features ♦ Dual-Band, Triple-Mode Operation ♦ +9dBm Linear Output Power ♦ 100dB Power-Control Range ♦ Supply Current Drops as Output Power is Reduced ♦ Dual Synthesizer for IF and RF LO

GENESIS gm5010

Abstract: Genesis Microchip osd BOOTSTRAP13
Contextual Info: PRELIMINARY DATA SHEET gm5010 C5010-DAT-01C March 2001 Genesis Microchip Inc. 165 Commerce Valley Dr. West • Thornhill • ON • Canada L3T 7V8 • Tel: 905 889-5400 • Fax: (905) 889-5422 2150 Gold Street • PO Box 2150 • Alviso • CA • USA 95002 • Tel: (408) 262-6599 • Fax: (408) 262-6365

GENESIS gm5010

Abstract: Genesis four Channel genesis
Contextual Info: Genesis Microchip Publication DATA SHEET gm5010/gm5010-H Sections in this document and all other related documentation that mention HDCP refer only to the gm5010-H HDCP-enabled chip. All other sections apply to both the gm5010-H chip and the gm5010 (non-HDCP) chip.

Contextual Info: 19-2013; Rev 2; 7/04 KIT ATION EVALU E L B AVAILA Complete Dual-Band Quadrature Transmitters ♦ Dual-Band, Triple-Mode Operation ♦ +9dBm Linear Output Power ♦ 100dB Power-Control Range ♦ Supply Current Drops as Output Power is Reduced ♦ Dual Synthesizer for IF and RF LO