IFAV80 Search Results

PSBI 9

Abstract: IFAV25
Contextual Info: ECO-PACTM 1 Rectifier Module for Power Factor Correction PSBI 9/06 IFAV25 VRRM IC25 VCES Preliminary Data Sheet = 15A = 1200 V = 37A = 600 V Fast Single Phase Rectifier Ultra Fast Boost Chopper Typical Rectified Mains Power Pn = 900 W at Vn = 110 V Pn = 2100 W at Vn = 240 V

PSBI 33

Contextual Info: ECO-PACTM 2 Rectifier Module PSBI 33/06 for Power Factor Correction X Fast Single Phase Rectifier Ultra Fast Boost Chopper KE V P S MA Preliminary Data Sheet 1 IGBT NTC optional Test Conditions VCES VGES IC25 IC80 RBSOA TVJ = 25 °C to 150 °C 600 V continuous

80C37

Contextual Info: VUI 9-06N7 Advanced Technical Information VRRM = 1200 V IFAV25 = 15 A Rectifier Module for Power Factor Correction VCES = 600 V IC25 = 37 A Fast Single Phase Rectifier Ultra Fast Boost Chopper J D 11 D 13 H D 12 N D1 A E D 14 7 B T G G Typical Rectified Mains Power

ixys VBH 40-05B

Abstract: mosfet induction heater D-68623 T4 3560 80c40
Contextual Info: VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V Ω RDSon = 116 mΩ Preliminary VRRM = 1200 V IDAV25 = 90 A Mains Rectifier Bridge D1 - D4 Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A

Contextual Info: VUI 9-06N7 VRRM = 1200 V IFAV25 = 15 A Rectifier Module for Power Factor Correction VCES = 600 V IC25 = 37 A Fast Single Phase Rectifier Ultra Fast Boost Chopper Preliminary data sheet J Typical Rectified Mains Power D 11 Pn = 900 W at Vn = 110 V Pn = 2100 W at Vn = 240 V

4005A

Abstract: mosfet induction heater T4 3560 welding rectifier D-68623
Contextual Info: VBH 40-05A Advanced Technical Information Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V Ω RDSon = 116 mΩ VRRM = 1200 V IDAV25 = 90 A Application Mains Rectifier Bridge D1 - D4 Symbol Conditions Maximum Ratings VRRM

PSDI 33

Abstract: Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode
Contextual Info: ECO-PACTM 2 PSDI 33/06 Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System IC25 VCES IFAV25 VRRM = 44 A = 600 V = 18 A = 1200 V Preliminary Data Sheet X IGBT KEG V P S MA Symbol Test Conditions VCES VGES IC25 IC80 RBSOA TVJ = 25 °C to 150 °C

DIODE T4 3560

Abstract: T4 3560 B ixys VBH 40-05B T4 3560 6 diode bridge 2170
Contextual Info: VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V RDSon = 116 m Ω VRRM = 1200 V IDAV25 = 90 A Preliminary data pin configuration see outlines Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A