Toshiba transistor NPN Ic 50A
Abstract: toshiba diode 1A TOSHIBA D MG50N2CK1 50n2
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA "ha DE I SOTTESO 001ti335 1 90D D I S C R E TE/OPTO SEMICONDUCTOR 16335 D7"-33j35' TOSHIBA GTR MODULE MG50N2CK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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OCR Scan
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001L33S
Dr-33-35"
MG50N2CK1
TJS1251C
EGM-HC50N2CK1-4
Toshiba transistor NPN Ic 50A
toshiba diode 1A
TOSHIBA D
MG50N2CK1
50n2
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HPCL-4504
Abstract: 4504 opto fuji ipm H04-004 HCPL-4504 hpcl4504
Contextual Info: S P E C I F I C A T I O N Osvice Name : IG3T-IPM Tyne Name : 6MBP50NA060-01 SDdC. No. : MS5M0275 Fuji Electric Co.Ltd. Matsumoto Factory DATE DRAWN CHECKED NAME 7/ *Í.Ma4aVa»r¡ •i - APPROVED Fuji E le c tric Co.,Ltd. zo M S 6 M 0 2 7 5 i /i s I R e y is e d
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OCR Scan
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P50NA060-01
MS6M0275
H04-OC4-OS
H04-004
HCPL-4504)
HPCL-4504)
H04-004-03
HPCL-4504
4504 opto
fuji ipm
HCPL-4504
hpcl4504
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ERW06-060
Abstract: SC-65 T0-247 T0247
Contextual Info: ± S P E C 1 F DEVICE NAME 1 C A T 1 O N SILICON DIODE TYPE NAME : SPEC. No. : E RW 0 6 - 0 6 0 DATE F u j i E l e c t r i c Co. Ltd. This S p e c ific a tio n is subject to change w ithout notice. DATE D RA W N NAME APPROVED Fuji Electric CoJJcL I CHECKED
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OCR Scan
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0257-R-004a
J33IC
T0-247
SC-65
H04-004-03
ERW06-060
ERW06-060
SC-65
T0247
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