IEC747 Search Results

Contextual Info: Fast Thyristor Modules Type V V drm RRM V V TO h V m i2 Itavm/Ic A 10 m s, ^vj max kA2s 10 m s, ^vj max •103 A/°C 180° el sin t* = ^vj max 1150 6,60 45/85 1,30 It s m A Vdsm=Vdrm, Vrsm=Vrrm+ 100V S i2d t It r m s m ( d i /d t ) cr A/pS DIN tvi = ^vj max IEC747-6

IEC-68-2-20

Abstract: IEC-68-2-21 172kPA IEC749 EIAJ ED-4701 B-123 IEC68-2-20 IEC68 IEC68-2-21 IEC747-2 IEC68-2-11
Contextual Info: 【 】 Page:0036 ［Ⅰ 半導体技術資料］ ⅹⅲ 品質保証 （１） 品質保証 【１】 品質方針 当社では「正しい作業により目標とする品質を工程で作り込む」を品質保証の基本理念とし、品質保証活動

MDD95 A 12 N

Abstract: IXYS MDD95 E72873 MDD95 MDD95-04N1 MDD95-06N1 MDD95-08N1 MDD95-12N1 MDD95-14N1 MDD95-16N1
Contextual Info: 4L,flk22L. DDOlEEfl □ 4bE D IXY I X Y S CORP a ix Y S MDD95 Diode Modules iTAV= 2 x 120 A VRRM= 400-1600 V v n* , Vrrm V V Type Version 1 500 700 900 1300 1500 1700 400 600 600 1200 1400 1600 MDD95-04N1 MDD95-06N1 MDD95-08N1 MDD95-12N1 MDD95-14N1 MDD95-16N1

IEC747-5

Contextual Info: Vishay Telefunken Symbols and Terminology Document Number 82602 05.01 www.vishay.com 1 Vishay Telefunken Table of Contents Symbols and Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

automotive controller LIN

Abstract: TJA1020 LIN 111 datasheet LIN BUS IEC747-1 ISO7637 TJA1020T TJA1020U
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TJA1020 LIN transceiver Preliminary specification Supersedes data of 2001 Aug 22 File under Integrated Circuits, IC18 2001 Dec 17 Philips Semiconductors Preliminary specification LIN transceiver TJA1020 FEATURES GENERAL DESCRIPTION

TJA1020

Abstract: TJA1020U IEC747-1 ISO7637 Q100 TJA1020T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TJA1020 LIN transceiver Product specification Supersedes data of 2001 Dec 17 2002 Jul 17 Philips Semiconductors Product specification LIN transceiver TJA1020 FEATURES GENERAL DESCRIPTION General The TJA1020 is the interface between the LIN

IEC747-1

Abstract: B670
Contextual Info: 5EMIKR0N Absolute Maximum Ratings Symbol C onditions ' VcES VcGR lc ICM R ge = 20 k ij Tease “ 25/80 °C Tease = 25/80 "C; tp ~ 1 ms V ges Plot Tj, Tag per IGBT, Tease = 25 °C Visol AC, 1 min. DIN 4 0 040 humidity climate DIN IEC68T.1 V a lu e s Units

TJA1020

Contextual Info: INTEGRATED CIRCUITS DATA SHEET TJA1020 LIN transceiver Preliminary specification Supersedes data of 2001 Mar 30 File under Integrated Circuits, IC18 2001 Aug 22 Philips Semiconductors Preliminary specification LIN transceiver TJA1020 FEATURES GENERAL DESCRIPTION

VARACTOR diode POINT color code table

Abstract: smd transistor w20 tunnel diode General Electric smd diode M2 circuit diagram of luminous metal detector IEC747-5 Telefunken diode color code photo thyristor tunnel diode GaAs germanium diode smd
Contextual Info: Vishay Telefunken Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material P W20 Function

IEC747-5

Abstract: photodiode lumen
Contextual Info: Tem ic Semiconductors Symbols and Terminology Symbols alphabetically A Anode, anode terminal A Radiant sensitive area That area which is radiant sensitive for a specified range a Distance between the emitter source and the detector B Base, base terminal

Contextual Info: □IXYS VVZB 120 Advanced Technical Data Three Phase Half Controlled Rectifier Bridge VRRM =1200-1800 V ^d AV M “ 120 A with IGBT and Fast Recovery Diode for Braking System V RRM Type V 1200 1400 1600 1800 VVZB VVZB VVZB VVZB 120-12 120-14 120-16 120-18

IEC747-6

Abstract: tt60f 101-AK thyristor TD 42 F TD 42 F AK 12 thyristor tt 25 tt200f
Contextual Info: Fast Thyristor Modules T ype V drm Itrmsm Itsm J i2dt Itavm/^c V TO rT (d i/d t)cr V RRM V A A 10 ms, ^vj max kA2s 10 ms, ^vj max *iœ A/°C 180° el V m£2 A/pS sin ^vj max 1150 6,60 45/85 1,30 Vdsm=Vdrm V r SM= V rrm + 100V (d v /d t)cr tq MS typ. DIN tvi =

Contextual Info: 4bflb55b 00Glb73 Mfl3 H I X Y n ix Y S Thyristor Modules Thyristor/Diode Modules V mn V mm V Vmm Vow V 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MCC95 MCD95 iTAV= 2 x 116 A VRRM= 400-1800 v Type Version 1 B MCC95-06ÌO1 MCC95~08io1 MCC95-12I01

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

VARACTOR diode POINT color code table

Abstract: smd transistor w20 tunnel diode General Electric germanium photodiode PIN IEC747-5 circuit diagram of luminous metal detector GaAs tunnel diode photodiode germanium tunnel diode GaAs germanium diode smd
Contextual Info: Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material P W20