IEC1287 Search Results

diagram ic A 7800A

Abstract: A 7800A DIM1800ESM17-E000
Contextual Info: DIM1800ESM17-E000 DIM1800ESM17-E000 Single Switch IGBT Module PDS5793-1.1 July 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand

DIM1200FSM12-A000

Contextual Info: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5547-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5547-3.0 March 2003

74188

Abstract: DIM1200NSM12-E000 IGBT full bridge 1200 28130
Contextual Info: DIM1200NSM12-E000 DIM1200NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5750-1.2 FEATURES PDS5750-2.0 June 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) *

160nF

Abstract: DIM900ESM45-F000
Contextual Info: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability

DIM200MKS12-A000

Abstract: DS-5552
Contextual Info: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Replaces November 2002, issue DS5552-1.2 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS VCES typ VCE(sat)*

DIM400DDM12-A000

Abstract: DS5532-3
Contextual Info: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5532-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5532-3.0 March 2003

4250A

Abstract: DIM2400NSM12-E000 Partial Discharge Measurements
Contextual Info: DIM2400NSM12-E000 DIM2400NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5758-1.0 FEATURES PDS5758-2.0 April 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ

was dual transistor

Abstract: DIM200MBS12-A000
Contextual Info: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM

DIM400GCM33-A000

Contextual Info: DIM400GCM33-A000 DIM400GCM33-A000 IGBT Chopper Module DS5613-1.1 June 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat *

DFM600XXM45-F000

Abstract: DS5915-1
Contextual Info: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating

DFM400NXM33-F000

Abstract: 3300V FRD
Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating

DFM200PXM33-F000

Abstract: basic ac motor reverse forward electrical diagram
Contextual Info: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.0 March 2007 LN25211 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF

DFM600XXM65-K000

Abstract: DFM600XXXM65-K000
Contextual Info: DFM600XXXM65-K000 Fast Recovery Diode Module DS5807-1.1 July 2007 LN25500 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated MMC Base plate With AIN Substrates • Dual Diodes Can Be Paralleled for 1200A Rating

DIM100PHM33-F000

Contextual Info: DIM100PHM33-F000 DIM100PHM33-F000 Half Bridge IGBT Module DS5764-1.2 June 2008 LN26119 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS ■

bi-directional switches IGBT

Abstract: DIM400PBM17-A000
Contextual Info: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module DS5524-2.3 June 2008 LN26123 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

160nF

Abstract: 4500a u4200 DIM900ESM45-F000
Contextual Info: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25831) 4500V 2.9 V 900A 1800A *(measured at the power busbars and not the auxiliary terminals)

DIM400XCM33-F000

Contextual Info: DIM400XCM33-F000 IGBT Chopper Module DS5938-1.0 February 2009 LN26594 FEATURES Soft Punch Through Silicon Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A

data sheet IC 7400

Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Contextual Info: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon

DFM900FXM12-A000

Contextual Info: DFM900FXM12-A000 Fast Recovery Diode Module DS5479-1.3 November 2007 LN25316 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 900A 1800A Isolated Copper Base plate

DFM1200EXM12-A000

Abstract: DFM1200EXM12 DFM1200EXM
Contextual Info: DFM1200EXM12-A000 Fast Recovery Diode Module DS5481-1.4 June 2008 LN26170 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Triple Diodes Can be paralleled for 3600A KEY PARAMETERS

DFM600FXM18-A000

Abstract: 1050g
Contextual Info: DFM600FXM18-A000 DFM600FXM18-A000 Fast Recovery Diode Module DS5438-1.4 April 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM typ VF (max) IF (max) IFM 1800V 2.0V 600A 1200A ■ Isolated Base

DIM200PLM33-F000

Contextual Info: DIM200PLM33-F000 . IGBT Chopper Module DS5864- 1.1 June 2008 LN26121 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) • High thermal cycling capability

Contextual Info: DIM150WHS12-E000 DIM150WHS12-E000 Half Bridge IGBT Module PDS5630-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

ALSIC 145

Abstract: DFM400PXM33-F000
Contextual Info: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.1 May 2008 LN26124 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 400A 800A Isolated AlSiC Base with AlN substrates