IE 49 TRANSISTOR Search Results

Contextual Info: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code

Contextual Info: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type

service-mitteilungen

Abstract: electronica rft Servicemitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio fernsehen elektronik scans-048 "service-mitteilungen" Leipzig RFT Service RFT Transistoren
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N Iradio -teievision \ Versorgung mit Bildröhren AUSGABE' 6/73 DATUM: Juni 1973 B 53 G2 Auf der Grundlage der Anordnung über die Rückführung und den Ein­ satz von Bildröhrenkolben GBl. II Nr. 49 vom 23.August 1972 müs­

BCW89R

Abstract: BCW89 DSA003674
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW89 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059

BCW70R

Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

Q62702-C2136

Abstract: Q62702-C2137
Contextual Info: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137

Contextual Info: BCP 29, BCP 49 Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.5 W Plastic case

marking BCV

Abstract: bcv 49
Contextual Info: BCV 29, BCV 49 NPN Silicon Darlington Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Complementary types: BCV 28, BCV 48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV 29 EF 1=B 2=C 3=E 4=C

BCP29

Abstract: BCP49 VPS05163
Contextual Info: BCP29, BCP49 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29

ic 4446

Abstract: ZUMT591 SOT323 2222 transistor b 622
Contextual Info: SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ZUMT591 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL MIN. Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT Ouput Capacitance Cobo TYP. MAX. UNIT IC=-1mA, VCE=-5V*

Transistor BSX 95

Abstract: k 49 transistor LC 500-S BSX49 Q60218-X48 Q60218-X49 bsx 30 BSX48 Scans-0010549
Contextual Info: IMPIM-Transistoren fü r HF-Schalteranwendungen BSX 48 BSX 49 Die Transistoren BSX 48 und BSX 49 sind doppeltdiffundierte epitaktische Silizium-Transistoren in Planar-Technik im Gehäuse 18 A3 DIN 41 876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.

BCP49

Abstract: BCP52-16 FT1513
Contextual Info: BCP49 PNP Silicon Darlington Transistor • For general AF applications • High collector current 4 3 2 • High current gain 1 C 2,4 B(1) E(3) EHA00009 Type BCP49 Marking BCP49 1=B Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings Parameter

ZXTN25020BFH

Abstract: ZXTP25020BFH ZXTP25020BFHTA RBC-10K
Contextual Info: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to

FMMTA42

Abstract: FMMTA92 TS16949 semiconductors 3E
Contextual Info: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage

zxtn25012efh

Abstract: transistor 1.25W
Contextual Info: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

ZXTN19060CFF

Abstract: ZXTN19060CFFTA ZXTP19060CFF marking 1E4
Contextual Info: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications

marking 1a8

Abstract: ZXTN25015DFH ZXTN25015DFHTA ZXTP25015DFH ZXTN
Contextual Info: ZXTN25015DFH 15V, SOT23, NPN medium power transistor Summary BVCEX > 30V BVCEO > 15V BVECO > 4.5V IC cont = 5A VCE(sat) < 40 mV @ 1A RCE(sat) = 25 m⍀ PD = 1.25W Complementary part number ZXTP25015DFH Description C Advanced process capability and package design have been used to

ZXTN25020DFH

Abstract: ZXTN25020DFHTA ZXTP25020DFH
Contextual Info: ZXTN25020DFH 20V SOT23 NPN medium power transistor Summary BVCEX > 100V; BV BR CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 28 m⍀ typical VCE(sat) < 43 mV @ 1A; PD = 1.25W Complementary part number ZXTP25020DFH Description C Advanced process capability and package design have been used to

ZXTN25100DFH

Abstract: ZXTN25100DFHTA ZXTP25100DFH
Contextual Info: ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m⍀ PD = 1.25W Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to

telefunken ta 750

Abstract: S416T smd marking l5 MARKING GA smd transistor marking L5 smd transistor marking ga transistor smd 49 transistor smd marking cu 23marking
Contextual Info: S 416 T TELEFUNKEN Semiconductors Silicon PNP planar RF transistor Applications Oscillator in VHF tuner. Features D Especially suitable for VHF oscillators D SMD package Dimensions in mm Case 23 A 3 DIN 41 869 SOT 23 Marking: GA Weight max. 0.01 g Absolute Maximum Ratings

Nec b 616

Abstract: 2SD2402 HE311
Contextual Info: T"'— • is — h v ' J : i> Silicon Transistor 2SD2402 N P N X t r ^ ^ r v 7 7; U Æ 2SD2402 6 /D C z iW v '- * ^ * - * # J lt t r a f lM ^ v U = l > h 7 > v x ^ y *>?m R , U T *5 U , DC m m « t : mm • K T ’ -f 7 4 ' ¿ r c * 3 Ì 7 " f o 1.5 ±0.1

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4 - MAY 1998_ FEATURES * 6 A Peak pulse c u rre n t * E xce lle n t h pE ch a ra cte ristics up to 6 A pulsed * lo w s a tu ra tio n v o lta g e * l c C o n t 2,5A

TRANSISTOR SE 135

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997_ ~ FEATURES * V CEO = -2 5 V * 3 A m p C o n tin u o u s C u rre n t * 10 A m p Pulse C u rre n t * L o w S a tu ra tio n V o lta g e

BFT47

Abstract: BFT49 BFT48
Contextual Info: BFT47 BFT48 BFT49 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X The NPN planar epitaxial transistors BF 257, BF 258 and BF 259 are intended for use in chrominance out­ put stages and luminance output stage of colour tele*