IE 49 TRANSISTOR Search Results

Contextual Info: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code

Contextual Info: 32E D • Ô23b320 ISIP Q Q lb b 7 4 BCV 29 BCV 49 NPN Silicon Darlington Transistors S IE M E N S / • • • • SPCL-, SEM IC O N BS For genera! A F applications High collector current High current gain Complementary types: B C V 28, B C V 48 PNP Type

service-mitteilungen

Abstract: electronica rft Servicemitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio fernsehen elektronik scans-048 "service-mitteilungen" Leipzig RFT Service RFT Transistoren
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N Iradio -teievision \ Versorgung mit Bildröhren AUSGABE' 6/73 DATUM: Juni 1973 B 53 G2 Auf der Grundlage der Anordnung über die Rückführung und den Ein­ satz von Bildröhrenkolben GBl. II Nr. 49 vom 23.August 1972 müs­

BCW89R

Abstract: BCW89 DSA003674
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW89 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059

BCW70R

Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
Contextual Info: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085

Q62702-C2136

Abstract: Q62702-C2137
Contextual Info: NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 PNP ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137

Contextual Info: BCP 29, BCP 49 Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.5 W Plastic case

VPS05163

Contextual Info: BCP 29, BCP 49 NPN Silicon Darlington Transistors • For general AF applications 4 • High collector current • High current gain • Complementary types: BCP 28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP 29

marking BCV

Abstract: bcv 49
Contextual Info: BCV 29, BCV 49 NPN Silicon Darlington Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Complementary types: BCV 28, BCV 48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV 29 EF 1=B 2=C 3=E 4=C

EHA00009

Abstract: BCP29 BCP49 VPS05163
Contextual Info: BCP29, BCP49 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29

BCP29

Abstract: BCP49 VPS05163
Contextual Info: BCP29, BCP49 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29

Contextual Info: BCP29, BCP49 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29

BCV49

Abstract: BCV28 BCV29 BCV48
Contextual Info: BCV29, BCV49 NPN Silicon Darlington Transistors 1
For general AF applications 2
High collector current 3
High current gain
Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49

BCV48

Abstract: bcv49 npn darlington BCV28 BCV29 BCV49
Contextual Info: BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type

BCV48

Abstract: BCV29
Contextual Info: BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type

ic 4446

Abstract: ZUMT591 SOT323 2222 transistor b 622
Contextual Info: SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ZUMT591 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . PARAMETER SYMBOL MIN. Static Forward Current Transfer Ratio hFE 100 100 80 15 Transition Frequency fT Ouput Capacitance Cobo TYP. MAX. UNIT IC=-1mA, VCE=-5V*

BCV29

Contextual Info: BCV29, BCV49 NPN Silicon Darlington Transistors 1
For general AF applications 2
High collector current 3
High current gain
Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49

Contextual Info: BCV29, BCV49 NPN Silicon Darlington Transistors 1
For general AF applications 2
High collector current 3
High current gain
Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49

Contextual Info: BCP49 NPN Silicon Darlington Transistors • For general AF applications 4 • High collector current • High current gain 3 2 C 2,4 1 B(1) VPS05163 E(3) EHA00009 Type Marking BCP49 BCP 49 Pin Configuration 1=B 2=C 3=E Package 4=C SOT223 Maximum Ratings

Transistor BSX 95

Abstract: k 49 transistor LC 500-S BSX49 Q60218-X48 Q60218-X49 bsx 30 BSX48 Scans-0010549
Contextual Info: IMPIM-Transistoren fü r HF-Schalteranwendungen BSX 48 BSX 49 Die Transistoren BSX 48 und BSX 49 sind doppeltdiffundierte epitaktische Silizium-Transistoren in Planar-Technik im Gehäuse 18 A3 DIN 41 876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.

BCP49

Abstract: BCP52-16 FT1513
Contextual Info: BCP49 PNP Silicon Darlington Transistor • For general AF applications • High collector current 4 3 2 • High current gain 1 C 2,4 B(1) E(3) EHA00009 Type BCP49 Marking BCP49 1=B Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings Parameter

ZXTN25020BFH

Abstract: ZXTP25020BFH ZXTP25020BFHTA RBC-10K
Contextual Info: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to

Contextual Info: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage

ZXTN25020BFH

Abstract: ZXTP25020BFH ZXTP25020BFHTA
Contextual Info: ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 32 m⍀ VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to