| P824L
Abstract: 2716D 
Contextual Info: 128K x 8 CMOS STATIC RAM MODULE IDT8MP824L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • The ID T 8 M P 824 L is 12BK x 8 high-speed C M O S static RAM constructed on an epoxy lam inate substrate using four 32K x 8 static RA M s in plastic surface mount packages.
 | OCR Scan
 | IDT8MP824L 
2716dnw
P824L
2716D | PDF | 
| 2716D
Abstract: 8MP8 P824L 
Contextual Info: 128K x 8 CMOS STATIC RAM MODULE IDT8MP824L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • High-density 1 megabit C M O S static RAM module Fast access tim e — 70ns  max.  • Low-power consumption — Active: less than 40 0 m W (typ.)
 | OCR Scan
 | IDT8MP824L 
30-pin
2716tbi
8MP824
2716drw
2716D
8MP8
P824L | PDF | 
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Contextual Info: IDT8MP824L 128K x 8 CMOS STATIC RAM MODULE In te g ra te d D evice Technology» Inc. DESCRIPTION: FEATURES: • • • • • • The ID T 8 M P 824 L is 128K x 8 high-speed C M O S static RAM constructed on an epoxy lam inate substrate using four 32K x 8 static R AM s in plastic surface mount packages.
 | OCR Scan
 | IDT8MP824L
400mW 
30-pin
2716fcl
8MP824 | PDF | 
| p612l
Abstract: 624L 
Contextual Info: &) Integrated Devi ce Technology, Inc. 64K X 16 32K X 16 CMOS STATIC RAM MODULE IDT8MP624L IDT8MP612L FEATURES: DESCRIPTION: • The ID T8M P 624LV ID T8M P612L are high-speed C M O S static RA M s constructed on an epoxy laminate substrate using four 32K x 8 static RAMs  ID T 8M P 62 4L ) or two 32K x 8
 | OCR Scan
 | IDT8MP624L
IDT8MP612L 
40-pin
624LV
P612L
624L | PDF | 
| 624L
Abstract: P612L 
Contextual Info: Integrated Device Technology, Inc. 64K x 16 32K x 16 CMOS STATIC RAM MODULE IDT8MP624L IDT8MP612L FEATURES: DESCRIPTION: • Th e ID T 8 M P 6 2 4 L /ID T 8 M P 6 1 2 L are high-speed C M O S static RA M s constructed on an epoxy lam inate substrate using four 32K x 8 static RA M s  ID T 8M P 62 4L   or two 3 2K x 8
 | OCR Scan
 | IDT8MP624L
IDT8MP612L 
40-pin
27081X00 
8MP624
8MP612 
624L
P612L | PDF |