IDM 73 Search Results

Contextual Info: IDM 2901A National Sem iconductor IDM 2901A 4-Bit Bipolar Microprocessor General Description Features and Benefits The IDM 2901A 4-bit bipolar microprocessor slice is a cascadable device designed fo r use in Central Processing Units, programmable microprocessors, peripheral c ontrol­

Contextual Info: Tin IDM ^ -C = 10m" 0,25pm Gold IDS (-T End Assembly Required) A -S T “ X” - S “ XX” : Stripped & Tinned : Daisy Chain Single Specify Suffix from table. All dimensions are ± 1/16". Not available in 28 positions and higher. “XX” ± 10p" (0,25pm) Gold IDM

KWH028Q02-F03

Abstract: ILI9320 2.8 TFT LCD 2908-05WB-MG max2331 CON-HDR-1X3-100 HD01DICT-ND FOD2712R1VCT-ND Led driver 50W schematic top NDS331N
Contextual Info: Stellaris Ethernet-Enabled Intelligent Display Module IDM Reference Design Kit User ’s Manual RDK-IDM-0 5 Co pyrigh t 2 008– 201 0 Te xas In strumen ts Copyright Copyright © 2008–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.

CON-HDR-2X5-050

Abstract: C44-10BSA1-G TSSOP54 HR961160C microSD card adapter circuit diagram K350QVG-V1-F C44-08BSA1-G WM8510 W25X80AVSSIG DS-LM39B92
Contextual Info: Stellaris Intelligent Display Module Single-Board Computer IDM-SBC Reference Design Kit User ’s Manual RDK-IDM-SBC-UM-05 Co pyrigh t 2 009– 201 1 Te xas In strumen ts Copyright Copyright © 2009–2011 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.

Transmeta

Abstract: 10G CX4 MBF200 "lattice semiconductor" 44 codec MB86V01 mission cyrus 007B FUJITSU FRAM OFDM-256 0.18um structured ASIC
Contextual Info: Fujitsu Microelectronics America, Inc. Executive Briefing Growing Through Innovation and IDM Leadership September 22, 2004 Fujitsu Microelectronics America, Inc. 9/22/04 1 Program • • • • Introduction Emi Igarashi Corporate Overview Ken Iida Products Update

c-mac 1553

Abstract: FC1553 TLO 64 N IDM1553 FC1553TI 1553 bus controller idm1553-15 MIL-STD-15538 CLK32 IDHT553-25
Contextual Info: MIL.STD.15538 INTEGRATED DATABUSMODULE MIL. LINK IDM1553 ABRIDGED VERSION - PLEASE REFER TO SEPARATEDA'IA SHEET FOR FULL INFORMATION The C-MAC IDM 1553 (MIL-LINK) Integrated DatabusModule is a completeMIL-STD 15538 or STANAG 3838 interface,capableof operationin Bus

Contextual Info: IRFY140M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)18.4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)73.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)

Contextual Info: IDM29901 National Semiconductor IDM 29901 TRI-STATE Octal Register General Description Features and Benefits The IDM29901 is an octal edge-triggered flip -flo p w ith TRI-STATE outputs that are specifically designed to drive high-capacitance loads or relatively low-impedance

24N100

Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFK 24N100 IXFX 24N100 RDS on trr N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM

Contextual Info: BTS240A Transistors N-Channel TempFET V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)58 @Temp (øC)73 IDM Max (@25øC Amb)232 Absolute Max. Power Diss. (W)170 Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.74

idm 73

Abstract: IRF244
Contextual Info: H EXFET Power MOSFETs International S<Ei R e c tifie r Hermetic Package TO-3 N-Channel Part Number Vos Drafn Roston Source Voltage Volts) On-State Resistance (Ohms) Iq Continuous Drain Current 25°C Case (Amps) IDM Drain Current (Amps) Pq Max Power Dissipation

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM

Contextual Info: HiPerFETTM Power MOSFET IXFN 24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 IDM IAR TC = 25°C

32n50

Abstract: ixfh 26 n 49 30N50
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C

Contextual Info: Power MOSFET IXTX 24N100 VDSS = 1000 V 24 A ID25 = RDS on ≤ 0.40 Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM

MPF910 equivalent

Abstract: .model for MPF910 BC237 TRANSISTOR mpf910
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF910 N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk ID IDM 0.5 1.0 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C

3350c

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 21N50Q IXFT 21N50Q Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM

32n50

Abstract: 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C

Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C

BS107A equivalent

Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage

IDM2901

Contextual Info: IDM2900 Family IDM 2900 Family Applications Information SY STEM A R C H IT E C T U R E OF TH E IDM2901A ment an address, jump to any address, and link subrou­ tines. Control bits for the "n e xt instruction" originate in the "microprogram store." This arrangement plus the

4 wire proximity

Abstract: Hartmann Braun hartmann
Contextual Info: Data Sheet 10/72-1.45-1 EN Melody CBC 10 - Output module - control From version 1.0 General The configuration of the CBC 10 with individual drive modules IDM is carried out with the help of Engineering Station and is described in detail in the technical description for the function block (30/72-2990). All parameters

idm155315

Abstract: c-mac 1553 IDM1553 MIL-STD-1553 common mode rejection ratio test 1553B c-mac overview A/Detector/"Detector IC"/"CD"/vhdl code for MIL 1553
Contextual Info: C R O R C C U I T S MIL-STD-1553B INTEGRATED DATABUS MODULE MIL - LINK IDM1553 ABRIDGED VERSION - PLEASE REFER TO SEPARATE DATA SHEET FOR FULL INFORMATION The C-MAC IDM 1553 (MIL-LINK) Integrated Databus Module is a complete MIL-STD 1553B or STANAG 3838 interface, capable of operation in Bus