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Texas Instruments TLV6002IDGKT Operational Amplifiers - Op Amps 1Mhz Low Power Op A mp A 595-TLV6002IDGKR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TLV6002IDGKT		11,490			1 $1.11 10 $0.80 100 $0.64 1000 $0.53 10000 $0.49	Buy Now
Texas Instruments TLV6002IDGKR Operational Amplifiers - Op Amps Dual 5.5-V 1-MHz RRIO operational amp A 595-TLV6002IDGKT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	TLV6002IDGKR		6,276			1 $0.64 10 $0.46 100 $0.36 1000 $0.31 10000 $0.28	Buy Now
Texas Instruments TLV6002IDGKRG4 Operational Amplifiers - Op Amps Dual, 5.5-V, 1-MHz, RRIO operational amplifier
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Mouser Electronics	TLV6002IDGKRG4					1 - 10 - 100 - 1000 - 10000 $0.32	Get Quote

IDG 600 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Integrated Dual-Axis Gyro IDG-1004 GENERAL DESCRIPTION NOT RECOMMENDED FOR NEW DESIGNS. PLEASE REFER TO THE IDG-1215 FOR A FUNCTIONALLYUPGRADED PRODUCT The IDG-1004 is an integrated dual-axis angular rate sensor gyroscope that can be used for dead reckoning	Original	IDG-1004 IDG-1215 IDG-1004 DS-IDG-1004Q-00-01	PDF
Contextual Info: Integrated Dual-Axis Gyro IDG-1004 GENERAL DESCRIPTION FEATURES • • • • • • • • • The IDG-1004 is an integrated dual-axis angular rate sensor gyroscope . It uses InvenSense’s proprietary and patented MEMS technology with vertically driven,	Original	IDG-1004 IDG-1004 DS-IDG-1004A-00-02	PDF
IDG 600 Abstract: IDG-600 IDG600 IDG 600 gyroscope VIBRATION SENSOR GYRO MEMS gyro sensor Invensense MEMS Gyroscope gyro applications of mems gyroscope Contextual Info: Product Brief IDG-600 sensing your motions TM Integrated Dual-Axis Gyroscope 1 cm Actual Size APPLICATIONS • High Performance Motion Sensing Game Controllers • Pointing Devices, Multimedia Remotes, & Computer Mice FEATURES • • • • • • • •	Original	IDG-600 IDG 600 IDG-600 IDG600 IDG 600 gyroscope VIBRATION SENSOR GYRO MEMS gyro sensor Invensense MEMS Gyroscope gyro applications of mems gyroscope	PDF
Contextual Info: EUPEC SBE D 3m]32i7 ÜQQüSn IDG « U P E C T 600 F • ^ Z S -v Z 600 Typenreihe/Type range 800 1000 1100 1200 1300 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 600. 1300 V V drm Vrrm	OCR Scan		PDF
FLM5359-8C Contextual Info: FLM5359-8C fujTtsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 39dBm Typ. • High Gain: G -j^B = 9.5dB (Typ.) • • • • High PAE: r iadd = 32% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package	OCR Scan	39dBm FLM5359-8C FLM5359-8C	PDF
Contextual Info: F\| .ftp-. FLM4450-18DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 4.4 ~ 5.0GHz	OCR Scan	FLM4450-18DA -45dBc FLM4450-18DA	PDF
FLM5964-4c Contextual Info: p. .fjW-,. FLM5964-4C Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ.) • • • • • High Gain: G-j^B = 9.0dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package	OCR Scan	FLM5964-4C 36dBm FLM5359-4C 1100mA FLM5964-4c	PDF
0J02 Contextual Info: SBE D EUPEC 3m]32i7 Ü Q Q ü S n IDG « U P E C T 600 F • ^ Z S -v Z O 600 Typenreihe/Type range 800 1000 1100 1200 1300 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 600.1300 V 600. 1300 V V drm	OCR Scan		PDF
FLM6472-12D Abstract: SCL 1058 FLM6472-12DA Contextual Info: FLM6472-12DA F\| Internally Matched Power GaAs FETs I FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM6472-12DA -45dBc 30dBm FLM6472-12DA FLM6472-12D SCL 1058	PDF
3742-18DA Abstract: FLM3742-18DA ag 1686 Contextual Info: FLM3742-18DA F lltrn ill J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 10.5dB (Typ.) High PAE: riac\|d = 33% (Typ.) Low IM3 = -45dBc@Po =31.5dBm Broad Band: 3.7 ~ 4.2GHz	OCR Scan	FLM3742-18DA -45dBc FLM3742-18DA 3742-18DA ag 1686	PDF
cd 1691 cp Abstract: Y3015 Contextual Info: F\| .fjU-. FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 9.5dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz	OCR Scan	FLM5964-12DA -45dBc 30dBm FLM5964-12DA 3100mA cd 1691 cp Y3015	PDF
FLM1414-2 Abstract: microwave databook FUJITSU MICROWAVE Contextual Info: FLM1414-2 c° FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 33.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 24% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed	OCR Scan	FLM1414-2 FLM1414-2 650mA microwave databook FUJITSU MICROWAVE	PDF
FLL300IL-1 Abstract: microwave databook Contextual Info: F,ifm-i • FLL300IL-1, FLL300IL-2, FLL300IL-3 I 1jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P-idg = 44.5dBm Typ. • High Gain: G -j^B = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability	OCR Scan	FLL300IL-1, FLL300IL-2, FLL300IL-3 FLL300IL-2) FLL300IL-3 FLL300IL-1 FLL300IL-1 microwave databook	PDF
Contextual Info: n FLM5964-6D Internally Matched Power GaAs FETs . I 1jU FEATURES • High Output Power: P-idg = 38.0dBm Typ. • High Gain: G -j^B = 10.0dB (Typ.) • High PAE: r iadd = 36% (Typ.) • Low IM3 = -45dBc@Po = 27dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5964-6D -45dBc 27dBm FLM5964-6D	PDF

FLM5964-18DA Abstract: 5964-18DA 5964-18D Contextual Info: FLM5964-18DA F\| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz	OCR Scan	FLM5964-18DA -45dBc 5964-18D FLM5964-18DA 5964-18DA	PDF
U/25/20/TN26/15/850/FLM6472-18DA Contextual Info: FLM6472-18DA F\| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM6472-18DA -45dBc FLM6472-18DA VD-164 U/25/20/TN26/15/850/FLM6472-18DA	PDF
FLM3742-25DA Contextual Info: F\|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM3742-25DA 44dBm -45dBc 32dBm FLM3742-25DA	PDF
FLM5964-25DA Abstract: CS 5800 Contextual Info: lîrTCI FLM5964-25DA r UJI1bU Internally Matched Power GaAs F E Ts FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz	OCR Scan	FLM5964-25DA 44dBm -45dBc 32dBm FLM5964-25DA CS 5800	PDF
FLM6472-25D Contextual Info: F\|.9J^., FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM6472-25DA 44dBm -45dBc 32dBm Te298 FLM6472-25D	PDF
GaAs FETs Abstract: FLM5964-4D Contextual Info: F\|.fjU. FLM5964-4D J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • High Gain: G -j^B = 9.0dB (Typ.) • High PAE: r iadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5964-4D 36dBm -45dBc 25dBm FLM5359-4D GaAs FETs FLM5964-4D	PDF
dS 3202 Contextual Info: F\|.S .,. FLM5964-35DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5964-35DA -45dBc FLM5964-35DA 8000mA dS 3202	PDF
FLM5964 Contextual Info: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5964-8D -45dBc 28dBm FLM5964-8D FLM5964	PDF
FLM4450-25D Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA Contextual Info: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D FUJI GaAs FET 25Q 328	PDF
q 1363 Contextual Info: p.fjW,. FLM5359-4C Internally M a tc h e d P o w e r G aA s F E T s FEATURES • High Output Power: P-idg = 36dBm Typ.) • High Gain: G -j^B = 10.5dB (Typ.) • • • • High PAE: r iadd = 33% (Typ.) Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM5359-4C 36dBm FLM5359-4C q 1363	PDF

IDG 600 Search Results

IDG 600 Price and Stock

Texas Instruments TLV6002IDGKT

Texas Instruments TLV6002IDGKR

Texas Instruments TLV6002IDGKRG4

IDG 600 Datasheets Context Search

IDG 600

FLM5359-8C

FLM5964-4c

0J02

FLM6472-12D

3742-18DA

cd 1691 cp

FLM1414-2

FLL300IL-1

FLM5964-18DA

U/25/20/TN26/15/850/FLM6472-18DA

FLM3742-25DA

FLM5964-25DA

FLM6472-25D

GaAs FETs

dS 3202

FLM5964

FLM4450-25D

q 1363