IDD37 Search Results

IBM0418A8ACLAB

Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
Contextual Info: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology

K7D803671B-HC33

Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
Contextual Info: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2

CXK77Q18B80AGB

Abstract: CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33
Contextual Info: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

K7D163674B

Contextual Info: K7D163674B K7D161874B 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Oct. 2003 Advance Rev. 0.1 Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items.

SRAM 8T

Contextual Info: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K7D161871B-HC30

Abstract: K7D163671B-HC33 K7D163671B-HC37
Contextual Info: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3

78H15

Contextual Info: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M

Contextual Info: SONY CXK77Q36B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 28/33/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

TSMC single port sram

Contextual Info: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input

hc40 3p

Abstract: K7D161871M-HC40 tkxc 153-FCBGA-1422
Contextual Info: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M

K7D161871M-HC40

Abstract: r1250 535BB1
Contextual Info: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M

153BGA

Abstract: K7D321874C
Contextual Info: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 32Mb C-die DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

jtag samsung

Abstract: CQ 20.000 K7D321874A K7D323674A U/25/20/TN26/15/850/SAMSUNG SRAM
Contextual Info: K7D323674A K7D321874A 1Mx36 & 2Mx18 SRAM 32Mb A-die DDR SRAM Specification 153FCBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: SONY CXK77Q36B160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 512K x 36 Organization 28/33/37/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

Contextual Info: K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

k7d163674b-hc33

Abstract: K7D163674B K7D161874B-HC27 K7D161874B-HC30 K7D161874B-HC33 K7D161874B-HC37 K7D163674
Contextual Info: Advance 512Kx36 & 1Mx18 SRAM K7D163674B K7D161874B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Oct. 2003 Advance Rev. 0.1 Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items.

K7D161871B-HC30

Abstract: K7D161871B-HC40 K7D163671B-HC33 K7D163671B-HC37 K7D163671B-HC40
Contextual Info: Advance K7D163671B K7D161871B 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

K7D163671B-HC33

Abstract: K7D163671B-HC37 K7D161871B-HC30
Contextual Info: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3

CXK77P36R80GB

Abstract: CXK77P36R80GB-33 CXK77P36R80GB-37 CXK77P36R80GB-4A
Contextual Info: SONY CXK77P36R80GB 8Mb LW R-R HSTL High Speed Synchronous SRAM 256K x 36 33/37/4 Preliminary Description The CXK77P36R80GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

K7D801871B-HC30

Abstract: 5G13
Contextual Info: Advance 256Kx36 & 512Kx18 SRAM K7D803671C K7D801871C Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. May 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3

Contextual Info: TEKELEC COMPONENTS bflE •iDD37fl7 OOOD1MÜ S7fl J> DOUBLE BALANCED MIXERS Modeln* Package Type F56ÓS2 Flat Pack BMH 160 TO 4011 TO 8 T 0 8 -1 4 4 Frequency range RF LO 15 - 1500 MHz IF DC - 1500 MHz LO Level 3 dBm Temperature range - 5 5 / 100'C min max

k7d161888m-hc33

Abstract: fcBGA PACKAGE thermal resistance SRAM 8T
Contextual Info: K7D163688M K7D161888M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History Initial document. Draft Data October. 2000 Remark Advance Rev. 0.1 Add-HC37 part Part Number, Idd, AC Characteristics April. 2001

2f 1001

Abstract: CXK77Q18B80AGB CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33 sony tsmc
Contextual Info: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW LS R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words