ID223 Search Results

IR3Y29B

Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Contextual Info: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX

PG110B

Abstract: nec microwave
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG110B 2 to 8 GHz WIDE BAND AMPLIFIER DESCRIPTION The µPG110B is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage required high gain characteristic of the microwave communication

20M32

Abstract: u1520
Contextual Info: CO FIFO BUFFER MEMORY/IC MEMORY CARD ★ U n d e r d e v e lo p m e n t • FIFO BUFFER MEMORIES ♦ Features • It is applicable to communication and OA equipment, as a data buffer between systems operating at different speeds. Bit Capacity configuration

LQ070T5BG01

Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Contextual Info: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT ¿iPG110B 2 to 8 GHz WIDE BAND AMPLIFIER DESCRIPTION T h e /xP G 110B is a G a A s m o n o lith ic in te g ra te d c irc u it d e s ig n e d as a w id e b a n d a m p lifie r from 2 G H z to 8 G H z. T h e d e vice is m ost s u ita b le fo r th e gain stag e re q u ire d high gain c h a ra c te ris tic o f th e m icro w a ve co m m u n ic a tio n

Contextual Info: SIEMENS FEATURES * Two Channel Optocoupler * High Current Transfer Ratio at lF=1 mA, 500% Wn. * Withstand Test Voltage, 2500 VRMS * Electrical Specifications Similar to Standard 6 Pin Coupler * Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering