ID CODE MISMATCH Search Results

LSE B9 transformer

Abstract: SD4933MR LSE B6 transformer SD4933
Contextual Info: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet — preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz

sd4931

Contextual Info: SD4931 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 150 W min. with 14.8 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

DB-54003L-175

Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
Contextual Info: DB-54003L-175 RF power amplifier using 1x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.5 V ■ Output power: > 5 W ■ Efficiency: 64% - 73% ■ Load mismatch: 20:1

SD4933

Abstract: M177 marking code h4 capacitor transistor marking code 325
Contextual Info: SD4933 HF/VHF/UHF RF power N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European

CAPACITOR 330 NF

Abstract: PD85025-E ATC capacitor 100b 470jw murata CAPACITOR grm32nf51e106za01b 334k X7R 50 PD85025 102J DB-85025-520 EEVHB1V100P EXCELDRC35C
Contextual Info: DB-85025-520 RF power amplifier using PD85025-E for UHF OFDM radio Features • Excellent thermal stability ■ Frequency: 340 - 520 MHz ■ Supply voltage: 15 V ■ Output power: 10 WPEP ■ Gain: 19 ± 1 dB ■ Efficiency: 45 % - 52 % ■ Load mismatch: 20:1

Contextual Info: STEVAL-TDR014V1 Demonstration board based on the PD55008-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 500 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Efficiency: 48 % - 54 % ■ Load mismatch: 20:1 ■ BeO-free amplifier

panasonic inductor date code

Abstract: 3214W-1-103E A03TJ B09TJ BZX284C5V1 EXCELDRC35C PD55008-E capacitor 330pF ATC STEVAL-TDR014V1
Contextual Info: STEVAL-TDR014V1 Demonstration board based on the PD55008-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 500 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Efficiency: 48 % - 54 % ■ Load mismatch: 20:1 ■ BeO-free amplifier

Contextual Info: SD4933 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz • In compliance with the 2002/95/EEC European

Contextual Info: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz

marking code AHF

Contextual Info: SD4931 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 150 W min. with 14.8 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB

PD54003L

Abstract: DB-54003L-175 DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 resistor 1K 5w GRM42-6C0G121J50 diode smd 1-35 j2
Contextual Info: DB-54003L-175 RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent Thermal Stability ■ Frequency: 135 - 175 MHz ■ Supply Voltage: 7.5V ■ Output Power: > 5W ■ Efficiency: 64% - 73% ■ Load Mismatch: 20:1

SMD code j620

Abstract: PD84008L DB-84008L-950 EEVHB1V100P EXCELDRC35C PD84008L-E j-513 grm39 j598
Contextual Info: DB-84008L-950 Evaluation board using PD84008L-E for 900 MHz 2-way radio Features • Excellent thermal stability ■ Frequency: 740 - 950 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Power gain: 11 ± 1.0 dB ■ Efficiency: 48 % - 54% ■ Load mismatch: infinite

PD84002

Abstract: H2 SOT-89 RF amplifier 3214W-1-103E DB-84002-960 EXCELDRC35C GRM39-C0G3R3C50Z500 GRM39-X5R105K16D52K UHF rfid reader grm39
Contextual Info: DB-84002-960 Evaluation board using PD84002 for UHF RFID reader Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 7.2 V ■ Output power: 2 W ■ Power gain: 13.9 ± 0.5 dB ■ Efficiency: 60 % - 63 % ■ Load mismatch: 20:1

104k 630 capacitor

Abstract: transistor st 932 j4063 PD85025-E panasonic inductor date code TL8W PD85025 102J J14-35 DB-85025-698
Contextual Info: DB-85025-698 RF power amplifier using PD85025-E for UHF OFDM radio Features • Excellent thermal stability ■ Frequency: 470 - 698 MHz ■ Supply voltage: 13.6 V ■ Output power: 10 WPEP ■ Gain: 15.3 ± 0.8 dB ■ Efficiency: 48 % - 73 % ■ Load mismatch: 20:1

G7 marking Code

Abstract: hf power transistor mosfet transistor h9 C5 MARKING TRANSISTOR M177 SD4933
Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

SD4933

Abstract: M177 With24-dB
Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

J2317

Abstract: J9001 DB-84008L-175 DB-84008L-950 EXCELDRC35C LQW18AN43NG00 PD84008L-E PD84008L J2802 TRANSISTOR 2586
Contextual Info: DB-84008L-175 Evaluation board using PD84008L-E for VHF 2-way radio Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Power gain: 15.7 ± 0.5 dB ■ Efficiency: 60 % - 64 % ■ Load mismatch: 10:1 all phases

murata REEL label

Abstract: GRM39-X5R105K16D52K DB-84001-520 H3 SOT-89 PD84001 H2 SOT-89 RF amplifier 3214W-1-103E EXCELDRC35C grm39
Contextual Info: DB-84001-520 Evaluation board using PD84001 for 2-ways radio Features • Excellent thermal stability ■ Frequency: 380 - 520 MHz ■ Supply voltage: 7.2 V ■ Output power: 1 W ■ Power gain: 15.5 ± 0.7 dB ■ Efficiency: 58 % - 67 % ■ Load mismatch: 20:1

PD84001

Abstract: UHF rfid reader 3214W-1-103E DB-84001-960 EXCELDRC35C GRM39-C0G6R8D50Z500 GRM39-X5R105K16D52K H2 SOT-89 RF amplifier grm39 GRM39-C0G100D50D500
Contextual Info: DB-84001-960 Evaluation board using PD84001 for UHF RFID reader Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 7.2 V ■ Output power: 1 W ■ Power gain: 14.6 ± 0.4 dB ■ Efficiency: 51 % - 53 % ■ Load mismatch: 20:1

PD84001

Abstract: .H2 sot89 3214W-1-103E DB-84001-520 EXCELDRC35C GRM39-X5R105K16D52K H2 SOT-89 RF amplifier grm39 RF transistor SOT-89
Contextual Info: DB-84001-520 Demonstration board using PD84001 for 2-way radio Features • Excellent thermal stability ■ Frequency: 380 - 520 MHz ■ Supply voltage: 7.2 V ■ Output power: 1 W ■ Power gain: 15.5 ± 0.7 dB ■ Efficiency: 58 % - 67 % ■ Load mismatch: 20:1

860mhz 100w

Contextual Info: STAP57100 RF power transistor the LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ ST advanced PowerSO-10RF - STAP package ■ Load mismatch 10:1 all phases