pj 69 diode
Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
Contextual Info: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU
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leicestershirele17vo145p1595icscrm99+110-7803-6404-x/00/pj 69 diodeshottky barrier diode 100v 100adiode pjsic igbt 1000v 400 afailure analysis igbtsic diodediode schottky 600vcree sic diode die300c600c
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