ICER CAPACITOR Search Results

Contextual Info: I CE RM E T E K MICROELECTRONICS 3ÔE D 2D05ÖQ3 □001115 6 ICER CH1780 — Intelligent Modem Module INTRODUCTION FEATURES The CH1780 modem module offers perhaps the fastest and easiest way of integrating a high performance modem into a product. Integration consists of mounting the module on the pro­

Murata SFr 450 filter

Abstract: exs00a-cs01580 murata filter sfr 450 33DH MARKING TDA5225 EXS00ACS01580 33dh NDK NX5032SD EXS00A CS NX5032SD
Contextual Info: Dat a Sh ee t, V1.0 , F eb rua ry 2 01 0 S m a r t L E W I S TM R X + TDA5225 En hanced Sensitivity M ulti-Cha nnel Qua d-C onfi gu rati on R ec ei ve r w ith Di gita l Sl icer Wi re less Co ntro l N e v e r s t o p t h i n k i n g . Edition February 19, 2010

Contextual Info: Dat a Sh ee t, V1.0 , F eb rua ry 2 01 0 S m a r t L E W I S TM R X + TDA5225 En hanced Sensitivity M ulti-Cha nnel Qua d-C onfi gu rati on R ec ei ve r w ith Di gita l Sl icer Wi re less Co ntro l N e v e r s t o p t h i n k i n g . Edition February 19, 2010

20/IGBT FF 450

Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> • bbSBIBl 0 0 3 0 1 :1.1 633 « A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor Protected IGBT QUICK REFERENCE DATA GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in

BUK856-450IX

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener

BUK856-450IX

Abstract: zener diode f7 T0220AB BUK856 transistor r 606 j
Contextual Info: N AUER P H I L I P S / D I S C R E T E bTE D • bbSBiai 0030111 633 * A P X Philips _ Product Specification Insulated Gate Bipolar Transistor BUK856-450IX Protected IGBT _

"Solenoid Driver"

Abstract: icer capacitor NTE1478 transistor 5a
Contextual Info: NTE1478 Integrated Circuit Solenoid Driver & Signal Sensing Circuit Description: The NTE1478 is an integrated circuit in a 10–Lead SIP type package that detects the stopping of a rotary signal and drives a plunger. It is designed for use in auto–reverse and auto–eject car stereo

scs thyristor

Abstract: icer capacitor NTE239
Contextual Info: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage

43 JO smd

Abstract: 1c smd transistor transistor bd135 chip PCN resistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6402 The M RF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold m etallizations and offers a high degree of reliability and

150 j47

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Pow er Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

40 pin J004

Abstract: transistor bd135
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

1206 transistor

Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •

TRANSISTOR BC 629

Abstract: BR101 MGL168 philips br101
Contextual Info: Philips Semiconductors Product specification Silicon controlled switch DESCRIPTION BR101 PINNING Silicon planar PNPN switch in a TO -72 m etal package. It is an integrated PNP/NPN transistor pair, w ith all electrodes accessible. APPLICATIONS PIN DESCRIPTION

transistor bd135

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON

TA76494P

Contextual Info: T A ^ I F l f w T w “ BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC l o GENERAL USE SWITCHING REGULATOR 494 TYPE The TA76494P is an IC for 494 type switching regulator, with 5V reference voltage, built-in error amplifier, saw tooth wave generating circuit,

NTE1729

Abstract: PWM Power Control Circuit
Contextual Info: NTE1729 Integrated Circuit Pulse Width Modulator PWM Control Circuit Description: The NTE1729 is an inverter control unit in a 16–Lead DIP type package which provides all the control circuitry for PWM type switching regulators. Included in this device is the voltage reference, dual error

DMP16

Abstract: NJM3524 NJM3524D NJM3524M NJM3524V SSOP16
Contextual Info: NJM3524 SWITCHING REGULATOR CONTROL CIRCUIT • GENERAL DESCRIPTION ■ PACKAGE OUTLINE The NJM3524 of regulating pulse width modulators contains all of the control circuitry necessary to implement switching regulators of either polarity converters and voltage doublers, as well as other power control

SD4701

Abstract: VK-200 200 pF air variable capacitor
Contextual Info: SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . DESIGNED FOR CLASS AB LINEAR OPERATION COMMON EMITTER INTERNAL INPUT/OUTPUT MATCHING 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN.

Contextual Info: NJM3524 SWITCHING REGULATOR CONTROL CIRCUIT  GENERAL DESCRIPTION  PACKAGE OUTLINE The NJM3524 of regulating pulse width modulators contains all of the control circuitry necessary to implement switching regulators of either polarity converters and voltage doublers, as well as other power control

SD4701

Abstract: OZ 960 variable capacitor VK-200
Contextual Info: SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . DESIGNED FOR CLASS AB LINEAR OPERATION COMMON EMITTER INTERNAL INPUT/OUTPUT MATCHING 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN.

discon

Contextual Info: Designated client product This product will be discontinued its production in the near term. And it is provided for customers currently in use only, with a time limit. It can not be available for your new project. Please select other new or existing products.

dc to dc converter application

Abstract: PWM Power Control Circuit DIP18 NJM2355 NJM2355D error amp
Contextual Info: NJM2355 TWO OUTPUT HIGH VOLTAGE SWITCHING REGULATOR • GENERAL DESCRIPTION New JRC's high voltage switching regulator, NJM2355, is a monolithic high voltage 50V max operation integrated circuit consisting of two channel PWM controllers. The NJM2355 contains an internal 5V reference, free running

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Programmable unijunction transistor/ Silicon controlled switch FEATURES BRY39 PINNING • Silicon controlled switch • Programmable unijunction

bry39

Abstract: BRY39 circuit BRY39 equivalent philips bry39 transistor ag M8B68O
Contextual Info: Philips Sem iconductors Product specification Silicon controlled switch BRY39 PIN CONFIGURATION DESCRIPTION Silicon planar PNPN switch in a TO-72 metal package intended for use in switching applications. It is an integrated PNP/NPN transistor pair, with all electrodes accessible.