IC-LG 10MA Search Results

LG-214

Contextual Info: Photointerrupters Transmissive KODENSHI LG-214 DIMENSIONS (Unit : mm) The LG-214 photointerrupter combine high output GaAs IRED with photo IC. The sensor makes possible easy development of objectdetecting systems with high performance, high reliability and small equipment size.

LG-207

Abstract: LG207
Contextual Info: Photointerrupters Transmissive KODENSHI LG-207 DIMENSIONS (Unit : mm) The LG-207 photointerrupter combine high output GaAs IRED with photo IC. The sensor makes possible easy development of objectdetecting systems with high performance, high reliability and small equipment size.

LG206

Abstract: LG-206
Contextual Info: Photointerrupters Transmissive KODENSHI LG-206 DIMENSIONS (Unit : mm) The LG-206 photointerrupter combine high output GaAs IRED with photo IC. The sensor makes possible easy development of objectdetecting systems with high performance, high reliability and small equipment size.

Contextual Info: SIEMENS LS 3341 YELLOW LY 3341 GREEN LG 3341 SUPER-RED T1 3 mm LED Lamp FEATURES * High Light Output * Lens-Tinted Clear * Viewing Angle 40° * T1 (3 mm) Package Size * 1" Lead Length * IC Compatible DESCRIPTION LS 3341 Super-Red LY 3341 Yellow LG 3341 Green

MM4209

Abstract: MM4028A MM4208 MM4208A MM4209A MSD6100
Contextual Info: MM4208, MM4028A, MM4209, MM4209A continued E L E C T R IC A L C H A R A C T E R IS T IC S <TA = 25 °C unless otherwise noted) _ . . Ch*ract*ri*tic . - Symbol Min Typ Max Unit OFF C H A R A C TER ISTIC S Co'lsctof.Emitter Breakdown V o ltage^ I dC • 3.0 mAdc, lg • 0

Contextual Info: TOSHIBA SEMICONDUCTOR TECHNICAL DATA TOSIBA P H O TO C O U P LER T L P 2 5 0 I NV GaAIAs IRED &. P H O TO -IC O TRANSISTOR INVERTER OlNVERTER FOR AIR CONDITIONOR O lG B T GATE DRIVE OPOWER MOS FET G A TE D RIVE Unit in mm The Toshiba TLP250 consists of a GaAIAs light emitting

BAW67

Abstract: BFS88 BAW63 BAW63A BFS46 BFS46A BFS85 BSV35 BSV35A BSV36
Contextual Info: M IC R O -E RATINGS AND CHARACTERISTICS AT 25°C n -p -n BSV35A HIGH-SPEED SW ITC HING TRANSISTORS BSV36 M ax. . M in. Max. v CBO Rated Max. - 25 “ 40 VCEO sus 1(2=10mA, lß = 0 - - 15 - - 20 Parameter M in. p -n - P BSV35 Test C onditions r VCER < ;io n

2N3707 DIODE

Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed

2N3724

Abstract: 2N3725 2n3725a transistor 2N3725
Contextual Info: Datasheet Central' 2N3724 2N3725 2N3725A Semiconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3 7 2 4 , 2 N 3 7 2 5 , 2 N 3 7 2 5 A types are Silicon NPN Planar Epitaxial Transistors

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain

2sc3052

Abstract: sot-23 Marking LG
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC3052 TRANSISTOR NPN FEATURES 1. BASE z z 2. EMITTER Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain

sot-23 Marking Lf

Abstract: transistor marking LF sot-23 sot-23 Marking LG marking NF sot-23 transistor marking LF SOT-23 lf
Contextual Info: 2SC3052 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

ic 2429

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors NPN Silicon eJ 1 1 V I Œ □ MMPQ2222 M M PQ 22224 a □ ‘Motorola Preferred Device i E m 5J V = a ü M J V I s MAXIMUM RATINGS Symbol MMPQ2222 MMPQ2222A Unit VCEO 30 40 Vdc Collector-Base Voltage

Contextual Info: 1/7 Structure Product Name : : Silicon Monolithic Integrated Circuit Power control and power driver for portable equipment Device Name : BH6575FV Features : • Low power consumption • Low ON resistance • SSOP-B40 package <Power Control Part> • Step-up DC/DC converter External Tr required

mp6k61

Abstract: BD9540 vmosfet BD9540EFV HTSSOP-B28 lg lcd monitor circuit diagram rohm capacitor 1005 x7r VOUT21
Contextual Info: Hi-performance Regulator IC Series for PCs 2ch Switching Regulators for Desktop PC No.09030EBT07 BD9540EFV ●Description BD9540EFV is a 2ch switching regulator synchronous controller that can generate low output voltages 0.75V to 5.5V . High efficiency for the switching regulator can be achieved due to its external N-MOSFET power transistor. The IC also

BD9540

Contextual Info: Hi-performance Regulator IC Series for PCs 2ch Switching Regulators for Desktop PC No.09030EBT07 BD9540EFV ●Description BD9540EFV is a 2ch switching regulator synchronous controller that can generate low output voltages 0.75V to 5.5V . High efficiency for the switching regulator can be achieved due to its external N-MOSFET power transistor. The IC also

BC548 pin diagram

Abstract: pin diagram transistor BC547 BC547 collector characteristic curve BC546-BC548 pin diagram of transistor BC548 bc547 pnp BC548 npn pin diagram of transistor BC558 BC548 ,BC558 DS21612
Contextual Info: BC546 - BC548 NPN EPITAXIAL PLANAR TRANSISTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 TO-92 Dim Min Max A 4.45 4.70 4.70 B 4.46 C 12.7 — Mechanical Data_

ZT1483

Abstract: ZT1701 BCW23 2N929 ZT2120 2N2475 BCW21 2N3707 BC107 BC108
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed

CXT2222A

Abstract: SOT89 pq sot-89 MARKING CODE Ba marking FL sot89
Contextual Info: Central” CXT2222A Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The C E N T R A L SEM IC O N D U CTO R CXT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal

Contextual Info: 2SC301 1 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s i s t o r U H F-C BAND LOW NOISE AMPLIFIER APPLICATIONS. • • • High Gain Low Noise Figure High f r U nit in mm : |S 2 ie|2= 12dB Typ. : NF = 2.3dB (Typ.), f= lG H z : f'i’ = 6.5GIIz M AXIM UM RATINGS (Ta = 25°C)

BFS43

Abstract: BFS42 BFS44 1N 2907A 2N2475 transistor equivalents for 2n2222a BFS36 BFS36A BFS37A BFS38
Contextual Info: Micro-E Semiconductors for Hybrid Integrated Circuits Transistors and Diodes designed specifically for use w ith T hick and Thin Film Circuits. Features % High Thermal Dissipation 0 Transfer Moulded Construction 0 Tin Plated Leads # Surface Bonding 0 Double Ended Construction

MPS6541

Abstract: Erie 390 erie capacitor
Contextual Info: MPS6541 silicon NPN SILICON VH F/UH F A M P LIFIE R TRAN SISTO R NPN SILICO N A N N ULAR VH F/U H F A M P L IFIE R TRA N SISTO R . designed fo r use in V H F a m p lifie r ap p lica tio n s. C o H ecto r-E m itter B re a kd o w n V o ltage — B V c E O = 20 V d c (M in) @ l c = 0 .5 m A d c

Contextual Info: SIEMENS LR 5480 SUPER-RED LS 5480 YELLOW LY 5480 GREEN LG 5480 RED T1 3/4 5 mm LED LAMP Maximum Ratings S torage Tem perature R ange (Ts tg ) . -5 5 " C to +100"C Ju nctio n Tem p era ture ( T j ) . 100“ C

CM2894A

Contextual Info: Datasheet CM2894A w Q M h C I 1 S e m ic o n d u c t o r C o rp . PNP SILICON SWITCHING TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION