IC-HAUS LIGHT Search Results

IC-WKM

Abstract: iC-Haus GmbH opto count-1 laser diode driver circuit automatic power control IC-HAUS light
Contextual Info: Driving Laser Diodes Uwe M. Malzahn iC-Haus GmbH Integrated Circuits GERMANY Webinar, April 27, 2006 Uwe M. Malzahn iC-Haus GmbH Driving Laser Diodes April 27, 2006 1 / 35 April 27, 2006 2 / 35 Introduction iC-Haus Founded in 1984 by Dr. Heiner Flocke and

iC-WKN

Abstract: IC-WKM Operating Sanyo laser diodes with integrated drivers iC-WKP iC-NZ DL-3146-151 DL-3147-260 DL-3149-057 74HCxx sanyo laser
Contextual Info: Operating Sanyo laser diodes with integrated drivers iC-Haus GmbH Uwe Malzahn November 24, 2006 Abstract The following describes application circuitry built with laser diode drivers by iC-Haus to operate the most commonly used Sanyo laser diodes in both CW and pulse mode.

how to interface microcontroller with encoder

Abstract: INTERPOLATOR SIN COS QFN28 5X5 iC-NXL TSSOP16 SG1C quad photodiode psd quadrature encoder ic so20w INCREMENTAL ENCODER 2048 BLCC LG5C
Contextual Info: Product Line Card iC-Haus GmbH Am Kuemmerling 18 55294 Bodenheim Driver iCs Laser Diode/LED Drivers for industrial sensors, barcode scanners, laser leveling, laser printers, copiers, laser pointers Package iC-HB Triple 155 MHz Laser Switch with LVDS Inputs

WG1S

Abstract: iC-WG diode wg WG1R
Contextual Info: WG1R/WG1S iC-WG RETICLE AND CODE DISC PHYSICAL DIMENSIONS given in mm 1997 Rev A0 iC-Haus GmbH Integrated Circuits Am Kuemmerling 18, D-55294 Bodenheim Tel +49-6135-9292-0 Fax +49-6135-9292-192 http://www.ichaus.com WG1R/WG1S iC-WG RETICLE AND CODE DISC

photoswitch

Abstract: iC-VDK
Contextual Info: ¡C-VDK •Haus AC PHOTOSWITCH FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High reliability and interference immunity due to monolithical design Effective photodiode area 1 m m 2 Directional characteristic due to focu ssing lens High sensitivity for visible light and near infrared

Contextual Info: iC-OR •Haus 5-ELEMENT MONOLITHIC PHOTODIODES ARRAY FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ M onolithic integrated photodiodes Excellent matching High sensitivity for visible light and near infrared Low dark currents Enhanced tem perature range -2 5 .1 2 5 °C

CL67

Abstract: 32MHz quartz RESONATOR 550KQ
Contextual Info: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output

7kd diode

Abstract: photoswitch
Contextual Info: iC-VP •Haus PHOTOSWITCH FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High spectral sensitivity Sensitive to visible light and near infrared Adjustable threshold Short switching time Supply voltage of 4.5. 16V CMOS/LSTTL-compatible output

Contextual Info: SMD-LED ELS-655-893 16.11.2007 rev. 02 Radiation Type Technology Case Red SMD AlGaAs SMD 0805 Description 0 ,5 High-power, high speed LED in standard SMD package, compact design allows for easy circuit board mounting and assembling of arrays 1,4 1,9 0,4 1 ,2

g401 smd

Abstract: incremental encoders siemens Siemens encoder cable G701
Contextual Info: iC-WT •Haus INCREMENTAL ENCODER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Differential scanning for track A and B Constant-light-evaluated scanning for the index track Z with adjustable relative threshold Photocurrent amplifier with high cut-off frequency

1300301

Abstract: 800-1750
Contextual Info: Photodiode-Chip EPC-1300-3.0-1 16.05.2008 rev. 07 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up 3350 ±20 typ. dimensions in µm Ø3000 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the

Contextual Info: Photodiode-Chip EPC-1300-3.0-3 16.05.2008 rev. 03 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side 3350 ±20 typ. dimensions in µm Ø3000 typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the

Contextual Info: Photodiode-Chip EPC-1300-1.0-1 04.07.2011 rev. 06 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up 1350 ±20 typ. dimensions in µm Ø1000 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the

Contextual Info: Photodiode-Chip EPC-1300-0.5-2 16.05.2008 rev. 03 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 850 ±20 Ø 500 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the

Contextual Info: Photodiode-Chip EPC-1300-0.22-1 16.05.2008 rev. 08 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 150 typ. thickness Description 330 (±20) µm Infrared-selective photodiode with response range in the

03TY

Abstract: photodiode InGaAs NEP
Contextual Info: Photodiode-Chip EPC-1300-3.0-4 16.05.2008 rev. 03 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side 3350 ±20 typ. dimensions in µm Ø3000 typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the

Contextual Info: Photodiode-Chip EPC-1300-0.22-3 04.07.2011 rev. 04 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side typ. dimensions in µm 460 ±20 150 220 typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the

Contextual Info: Photodiode-Chip EPC-1300-0.22-2 19.05.2008 rev. 03 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 150 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the NIR-region and enhanced

Contextual Info: Photodiode-Chip EPC-1300-0.22-4 16.05.2008 rev. 04 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side 150 typ. dimensions in µm typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the

Contextual Info: Photodiode-Chip EPC-1300-1.0-1 16.05.2008 rev. 04 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up 1350 ±20 typ. dimensions in µm Ø1000 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the

Contextual Info: Photodiode-Chip EPC-1300-1.0-3 16.05.2008 rev. 03 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP Both on top side 1350 ±20 typ. dimensions in µm Ø1000 typ. thickness Description 330 ±20 µm Broadband photodiode with maximum response in the

Contextual Info: Photodiode-Chip EPC-1300-0.22-2 04.07.2011 rev. 04 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 150 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the NIR-region and enhanced

Contextual Info: Photodiode-Chip EPC-1300-0.5-1 04.07.2011 rev. 12 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up typ. dimensions in µm 850 ±20 Ø 500 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the NIRregion (800-1700 nm)

Contextual Info: Photodiode-Chip EPC-1300-1.0-2 04.07.2011 rev. 06 Wavelength range Type Technology Electrodes Infrared Planar InGaAs/InP P anode up 1350 ±20 typ. dimensions in µm Ø1000 typ. thickness Description 330 (±20) µm Broadband photodiode with maximum response in the