IC SRAM 64K X 4 Search Results
IC SRAM 64K X 4 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MR27C64-25/B |
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27C64 - 64K (8K x 8) EPROM |
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| MD27C64-35/B |
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27C64 - 64K (8K x 8) EPROM | |||
| MR27C64-20/B |
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27C64 - 64K (8K x 8) EPROM |
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| MD27C64-15/B |
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27C64 - 64K (8K x 8) EPROM |
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| MD27C64-20/B |
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27C64 - 64K (8K x 8) EPROM |
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IC SRAM 64K X 4 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: MICRON SEM IC ONDUCTOR INC b7E D • blllSHT ÜGGTHaS 72T « M R N MT5LC2564 64K X 4 SRAM M IC R O N G SfMICntJOUCTOR INC SRAM 64K X 4 SRAM LOW VOLTAGE • All I/O pins are 5V tolerant • High speed: 12,15, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal |
OCR Scan |
MT5LC2564 24-Pin MTSLC2564 | |
circuit diagram with IC 7476
Abstract: 600/DG34-1021-36-1012-F
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OCR Scan |
MT2LSYT3272B2, MT4LSYT6472B2 200ms 001Db53 circuit diagram with IC 7476 600/DG34-1021-36-1012-F | |
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Contextual Info: M IC R O N I 64K ¿FUICQNDUCTOR INC SRAM MT5C2565 X 4 SRAM 64K X 4 SRAM FEATURES • High speed: 10,12,15,20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options |
OCR Scan |
MT5C2565 28-Pin G0102b4 | |
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Contextual Info: MT5C2564 64K x 4 SRAM M IC R O N SRAM 64K x 4 SRAM • High speed: 10,12,15,20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option • All inputs and outputs are TTL-compatible |
OCR Scan |
MT5C2564 24-Pin | |
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Contextual Info: PRELIMINARY M IC ^ C a iü lN I MT2LSYT3272T4/T6, MT4LSY6472T4/T6 32K, 64K x 72 SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM SYNCHRONOUS SRAM MODULE 256KB/512KB, 3.3V, PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES • • • • PIN ASSIGNMENT Front View |
OCR Scan |
MT2LSYT3272T4/T6, MT4LSY6472T4/T6 160-lead, 256KB/512KB, 160-PIN | |
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Contextual Info: ADVANCE M IC R O N * MT3LST3264 P , MT3LST6464(P) 32K/64K x 64 SYNCHRONOUS SRAM MODULES 32K/64K x 64 SRAM SYNCHRONOUS SRAM MODULE w ith Tag RAM 256KB/512KB, 3.3V, FLOW-THROUGH OR PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES PIN ASSIGNMENT (Front View) |
OCR Scan |
MT3LST3264 MT3LST6464 32K/64K 256KB/512KB, 160-Pin 160-lead, 82430FX, 82430HX 82430VX | |
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Contextual Info: |V |IC = R O N 64K SYNCHRONOUS SRAM X M T 58L C 64K 16/18C5 16/18 S Y N C B U R S T SRAM 64K x 16/18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • OPTIONS 3.3V I/O PIPELINED DCD SRAM |
OCR Scan |
16/18C5 100-lead MT58LC64K1 | |
CXA4Contextual Info: M T58LC 64K 16/18D 8 64K X 16/18 S Y N C B U R S T SRAM |V |IC =R O N 64K x 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 6 and 7ns |
OCR Scan |
T58LC 16/18D 100-leadKC MT58LC64K1BM808 CXA4 | |
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Contextual Info: PRELIMINARY M IC R O N MT5LC64K16D4 REVOLUTIONARY PINOUT 64K x 16 SRAM SRAM 64K x 16 SRAM REVOLUTIONARY PINOUT 3.3V OPERATION WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • Fast access times: 12*, 15,20 and 25ns • High-performance, low-power, CMOS double-metal |
OCR Scan |
MT5LC64K16D4 44-Pin //7777m GQ1D421 | |
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Contextual Info: M IC R O N 64K SRAM MT5C2564 X 4 SRAM 64K X 4 SRAM PIN A SSIG N M E N T (Top View • High speed: 10*, 12*, 15,20, 25, and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option |
OCR Scan |
MT5C2564 24-Pin | |
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Contextual Info: MT58LC64K18C4 64K X 18 SYNCBURST SRAM M IC R O N SYNCHRONOUS SRAM 64K x 18 SRAM FEATURES • • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE access time: 5 and 6ns |
OCR Scan |
MT58LC64K18C4 Hi069 160-PIN | |
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Contextual Info: M IC R D N I MT5LC2565 64K X 4 SRAM SEMICONDUCTOR IC SRAM 64K x 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/ O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 and 25 • High-performance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply |
OCR Scan |
MT5LC2565 28-Pin | |
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Contextual Info: ADVANCE |V |IC = R O N 64K SYNCHRONOUS SRAM X MT58LC64K32/36E1 32/36 SYNCBURST SRAM 64K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE Fast access times: 8.5, 9,10 and 11ns Fast OE# access time: 5ns Single +3.3V +0.3V/-0.165V power supply Vcc |
OCR Scan |
MT58LC64K32/36E1 100-lead | |
L541
Abstract: 1.2 Micron CMOS Process Family
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OCR Scan |
DDQ33 MT5C2564 24-Pin L541 1.2 Micron CMOS Process Family | |
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Contextual Info: |U|IC=RON 64K X MT8S6432 32 SRAM MODULE 64K X 32 SRAM SRAM MODULE FEATURES • • • • • • • • High speed: 15*, 2 0 ,25,3 0 and 35ns High-performance, low-power CMOS process Single +5V ±10% power supply _ Easy memory expansion with CE and OE functions |
OCR Scan |
MT8S6432 64-Pin MTBS6432 | |
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Contextual Info: |U|IC=RON 64K SRAM 64K X MT5C6401 X 1 SRAM 1 SRAM PIN ASSIGNMENT Top View • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option • All inputs and output are TTL compatible |
OCR Scan |
MT5C6401 22-Pin in64K | |
A1526
Abstract: 64K X 4 SRAM
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OCR Scan |
T5LC2565 28-Pin MT51C2565 MT5LC2565 A1526 64K X 4 SRAM | |
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Contextual Info: I^ IC n D N 64K X MT58LC64K32/36D8 32/36 SYNCBURST SRAM 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED , SIN G LE-C YC LE D E SELEC T AND SELECTABLE B U R ST M O DE FEATURES • • • • • • • • • • Fast access times: 4.5, 5, 6 and 7ns |
OCR Scan |
MT58LC64K32/36D8 100-lead | |
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Contextual Info: PRELIMINARY M T58LC 64K 32C 6 6 4 K X 32 S Y N C B U R S T SRAM I^ IC R D N 64K x 32 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access tim e: 7ns |
OCR Scan |
T58LC 100-lead5 | |
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Contextual Info: MICRON TECHNOLOGY INC SSE D • blllSMT DDD3SS4 Dlfl ■ MRN ADVANCE MT5LC2565 64K X 4 SRAM |V |IC = R O N 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE FEATURES • High speed: 15,20,25, and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply |
OCR Scan |
MT5LC2565 0003Sbl 018S3, | |
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Contextual Info: MT58LC64K16/18C5 64K X 16/18 SYNCBURST SRAM M IC R O N I TECHNOLOGY. INC SYNCHRONOUS SRAM 64K x 16/18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • OPTIONS SA-1 « w„ „ J¥ j*. (* |
OCR Scan |
MT58LC64K16/18C5 MTS8LC04K18H8C5 QG23Q55 | |
13FLPContextual Info: MT8S6432 64K X 32 SRAM MODULE M IC R O N SRAM MODULE 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View High speed: 15*, 20, 25,3 0 and 35ns High-perform ance, low -pow er CM OS process Single +5V ±10% pow er supply _ Easy m em ory expansion w ith CE and OE functions |
OCR Scan |
MT8S6432 64-Pin 13FLP | |
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Contextual Info: MICRON SEMICONDUCTOR INC b?E T> m blllSMT 000=1552 7^ HMRN ADVANCE M IC R O N 64K SYNCHRONOUS SRAM X MT58LC64K18C4 18 SYNCHRONOUS SRAM 64K x 18 SRAM FEATURES • • • • • • • • • • • • • Fast access times: 7 ,10,12 and 15ns Fast OE: 5 ,6 ,7 and 8ns |
OCR Scan |
MT58LC64K18C4 486/Pentiumâ MT58LC64K18C4EJ-10 MT56LC64K18C4 | |
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Contextual Info: ADVANCE MT58LC64K18C4 64K X 18 SYNCHRONOUS SRAM M IC R O N 64K x 18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 7 ,1 0 ,1 2 and 15ns |
OCR Scan |
MT58LC64K18C4 486/Pentium 52-Pin MT58LC64K18C4EJ-10 MT58LC64K16C4 | |