IC MAX 412 Search Results

IGBT inverter wind turbine

Abstract: DIM1200DDM12-E000 IGBT full bridge 1200
Contextual Info: DIM1200DDM12-E000 DIM1200DDM12-E000 Dual Switch IGBT Module PDS5748-2.3 April 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand

74188

Contextual Info: DIM1200NSM12-E000 DIM1200NSM12-E000 Single Switch IGBT Module PDS5750-1.2 April 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand

208H

Abstract: XFGIB100
Contextual Info: S c h e m a t i c : SINGLE PORT .J E le c tr ic a l S p e c if ic a t io n s : @ 25DC ISOLATION: 1500 Vrms TURNS RATIO: (PRI/SEC) 1CT: 1CT ±2% OCL: 350uH MIN 6>100KHz lOOmV BmADC Rise Time: 1.75ns Max. INSERTION LOSS: -O.BdB MAX 1 MHz-100MHz -1.2dB MAX 9100MHz— 125MHz

BDY96

Abstract: DTS519 60M6 2n2114 IR519
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Max hFE fT •CBO Max t0N Max Of) ON) Min (HZ) (A) (8) PD r (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40

006-V03

Contextual Info: i . M e c h a n ic a l D im e n s io n s : 2 . S c h e m a t ic : B A 0 .500 Max 1.10 Max 3. Electrical Specifications: OCL: 10O uH ±10% @100KHz 0.1V D 0 . 5 0 0 Ì 0 . 100 DCR: 0.040 Ohms Max Rated Current: 6.0Adc 0 0 .0 4 0 Notes: 1. SaldBrability: Leads shall meet MIL— STD— 2D2»

XF132

Contextual Info: 1. M e c h a n ic a l D im e n s io n s : 2 . E l e c t r i c a l S p e c if ic a t io n : INDUCTANCE: 246nH ±5% 0: 95 Min. A 10.55 Max TEST FREQ: 50M H z B 6 .3 5 Max SRF: 6 8 5 MHz Min DCR: 3 5 m 0 h m s Max Idc: 3.DA Max • r" <J in Turns: 15 - I I-

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

Contextual Info: Q u ic k D is c o n n e c ts 1-800-800-0449 e IC F la g T e rm in a ls KRIMPTITE UNINSULATED Wire Size Part Num ber 22-18 {0.3-1,0 A Max. Tab c B Max. Ref. D AA-1158 .250 x .032 6,3 x 0,8) .56 2 (1 4,3 ) .321 (8,1) .079 (2,0) .305 (7,7) 1 6-14(1.2-2.0)

stk391 110

Abstract: stk391 STK391-020
Contextual Info: Ordering number: EN 5169 Thick Film Hybrid IC STK391-020 2-Channel Convergence Correction Circuit lc max = 6A Overview Package Dimensions The STK391-020 is a convergence correction circuit IC for video projectors. It incorporates two output amplifiers in a single package, making possible the construction of

Contextual Info: i . M e c h a n ic a l D im e n s io n s : 2. S c h e m a t ic : B A 1.10 0 .5 1 5 Max Max 3. Electrical Specifications: OCL: 4 6 0 u H ± 1 0% @ 100KH z 0.1V D 0 . 5 0 0 Ì 0 . 100 DCR: 0 .1 8 0 O hm s Max Rated C u rre n t: 3.0A dc 0 0 .0 2 5 Notes: 1. SaldBrability: Leads shall meet MIL— STD— 2D2»

Contextual Info: Ordering number : ENA1795A LC8784P7PB/P6PB/M4PB /J3PB/J2PB/G1PB/G0PB /C8PB/96PB CMOS IC ROM 256K byte Max size RAM 12K byte (Max size) 8-bit ETR Microcontroller Overview The is an 8-bit ETR microcomputer that, centered

Contextual Info: Ordering number : ENA1795A LC8784P7PB/P6PB/M4PB /J3PB/J2PB/G1PB/G0PB /C8PB/96PB CMOS IC ROM 256K byte Max size RAM 12K byte (Max size) 8-bit ETR Microcontroller Overview The is an 8-bit ETR microcomputer that, centered

Contextual Info: Ordering number : ENA1795A LC8784P7PB/P6PB/M4PB /J3PB/J2PB/G1PB/G0PB /C8PB/96PB http://onsemi.com CMOS IC 8-bit ETR Microcontroller ROM 256K byte Max size RAM 12K byte (Max size) Overview The is an 8-bit ETR microcomputer that, centered

XFMRS 162

Contextual Info: 1. M e c h a n ic a l D im e n s io n s : 2. S c h e m a tic : Sec Pri B A 1.92 1 .6 2 Max Max XFMRS YYWW X F D -5 -2 4 X155D TU / 1 2 3 -o 5 2 o3 o- -o 6 -o 7 4a- • -o 8 E le c tr ic a l 4 - 1 o- t Prim ary: Pins Ex I: Pins D 1.41 Parallel

Contextual Info: 3. E l e c t r i c a l S p e c i f ic a t io n s : @25°C 2. Schem atic: ISOLATION: 1500 V rm s, 60 Sec INSERTION LOSSr - 1 .OdB Max @1MHz — 0.5dB Max 2M H z-50M H z — 1.0dB Max ®200M Hz - 2 . OdB Max @400MHz - 3 . OdB Max @500MHz OCL: Pins 2 - 3 , 5 - 6 , 6 - 9 , 1 1 - 1 2 160uH Min ' 10OKHz 0.1V fo r Each

Contextual Info: ANALO G D E V I C F S INC 51E D □ AN ALO G D E V IC E S FEATURES True RMS-to-DC Conversion Laser-Trimmed to High Accuracy 0.2% max Error AD536AK 0.5% max Error (AD536AJ) Wide Response Capability: Computes RMS of AC and DC Signals 450kHz Bandwidth: > 100mV

Contextual Info: 1. M e c h a n ic a l D im e n sio n s: 2 . S c h e m a t ic : TOP VIEW 1 O pi r~i X Q XFMRS YYWW CD •XFHCLB-4R7 u Lh I X I O O f— K> in 2 O- l< 1 2 FRONT VIEW A 2 6 .0 Max 3. E le c t r ic a l S p e c i f ic a t io n s : In d u c ta n c e : 4 .9 8 u H ± 2 0 %

60uH

Abstract: 1400khz
Contextual Info: 2 . Schem atic: 1. M e c h a n ic a l D im e n s io n s : B 19.00 Max A I— 22.50 1 o- -0 2 40- -03 May £ x □ CM 3. E lectrical Specifications: G PIN1 D 3.60± 1.00 00.70 OCL: 2.7mH Min @1KHz 1V, Each wdg OCL Diff: 60uH Max, Pins 1-2 & 4 - 3 □CR: 0.200 Ohms Max, Each wdg

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2. S ch e m atic: B 62.00±2.00 1 5.00 Max IL CD D in o o o- bJ -H m 3. Electrical Specifications: @25"C OCL: 1 000uH± 10% 0.796MHz 0.1V DC Res.: 5.8 Ohms Max Rated Idc: 240mAdc D 5.00 Max Q: 15 Min @0.796MHz SRF: 1.8 MHz Min

Contextual Info: M O S E L V IT E L IC V100J9 and V100J8 1M X 9, 1M X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM MEMORY MODULE 60/60L 70/70L 80/80L Max. RAS Access Time, tRAf0 HIGH PERFORMANCE V100J8/9 60 ns 70 ns 80 ns Max. Column Address Access Time, (trA A 30 ns 35 ns 40 ns

UN4121

Abstract: UN4122 UN4123 UN4124 UN4210 UN4211 UN4212 UN4213 UN4214 UN4215
Contextual Info: - 344 * MM Ta=25t!, *EPfíTc=25t m UN4121 n & fôT UN4122 % ffl & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) m (W) ICBO (max) (¿¿A) VcB (Y) (min) (max) (V) (V) le (A) Ib (A) -0.5 0.3 -1 -50 40 -10 -0.1 -0. 25 -0.1 Dig tal -50 -50 -0.5 0.3 -1 -50 50 -10 -0.1 -0.25

208H

Abstract: 340AD
Contextual Info: 2 . S c h e m a tic : 1. M ech an ical D im en sion s: o3 .5 5 Max O- 3. E le c tr ic a l S p e c ific a tio n s: OCL: 3 .0 1.5uH ¿25% DC Res.: 0 .0 2 6 @ 100KHz 0 .2 5 0 V O hm s Max DC C u rre n t: 3 .4 0 A d c O Max in CO Pad Layout BOTTOM VIEW Notes:

IN01A

Abstract: 66uH
Contextual Info: 2. Sch e m atic: 1. M e c h a n ic a l: 5.70 Max A 13.4-0 Max Û H" k d m +1 IT 01 L XFMRS XFHCLZ -4 R 6 H } rrww TOP VIEW 3. ELECTRICAL SPECIFICATIONS: @25°C OCL 6.6uH ±25% @1 ODKHz, 0.25V ODC OCL 4.6uH ±25% @1 OOKHz, 0.25V with load 7.3Adc @25’ C OCL

Contextual Info: IBI s : I I File No. ^CEC-412 D0 2 —09PCA00jSHEET 1 / 1 j 1.65 11.60 1.44 11.06 W rite P ro te c t S PE C IF IC A T IO N C u rre n t Rating: 1 A m p s Max. C o n ta c t R e sista n ce : 1 0 0 M illioh m s Max. |nSu latio n R e sista n ce : 1 0 0 0 M e go h m s Min.