IC MARKING TY Search Results

UMT222A

Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Contextual Info: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking

A03404

Abstract: marking a4 a4 sot-23 marking alpha omega A03404L ALPHA SEMICONDUCTOR sot-23 A4 marking sot-23 sot-23 MARKING CODE A4 A4 marking sot23
Contextual Info: ALPHA & OMEGA SE M IC O N D U C TO R Document No. Version F Title A03404 Marking Description SOT-23 PACKAGE MARKING DESCRIPTION Standard product NOTE: P - Package and product type N - Last digital of product number W - Week code A - Assembly location code

adsl filter

Abstract: PCB layout for electronic choke n262 marking code ep FIN0146-Y FIN0147-G FIN0153-H FIN0137-Z FIN0138-H FIN0140-C
Contextual Info: Inductive Ferrite Components xDSL Transformers Data Sheet EP 13 xDSL ADSL Interface Transformers B78421-A1638-A3 Application 13,5 max. 12,4 max. • Matched to Infineon IC: PEB4565/4566 Features ■ PTH version upon request Marking 17,2 max. Pin 1 marking

IEC-68-2-58

Abstract: HAL114 HAL114UA-E IEC68-2-20 switch ic
Contextual Info: MICRONAS INTERMETALL HAL114 Unipolar Hall Switch IC MICRONAS Edition June 10, 1998 6251-456-1DS HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Temperature Range Introduction The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated

amplifier for piezo sensor

Abstract: Micronas hall sensor marking
Contextual Info: DATA SHEET MICRONAS Edition Oct. 19, 2004 6251-439-2DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 DATA SHEET Contents Page Section Title 3 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. 1.6. Introduction Features Marking Code Special Marking of Prototype Parts

Contextual Info: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage

STB1277L

Abstract: Transistor TRANSISTOR stb1277 STB1277 STD1862L STD1862
Contextual Info: STB1277L Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862L Ordering Information Type NO. STB1277L Marking STB1277 Outline Dimensions

Contextual Info: SSTA06 / MMSTA06 Transistors NPN General Purpose Transistor SSTA06 / MMSTA06 zDimensions Unit : mm zFeatures 1) BVCEO < 80V ( IC=1mA) 2) Complements the SSTA56 / MMSTA56. SSTA06 zPackage, marking and packaging specifications Part No. SSTA06 MMSTA06 Packaging type

STB1277

Abstract: Transistor TRANSISTOR stb1277 STD1862
Contextual Info: STB1277 Semiconductor PNP Silicon Transistor Description • Audio power amplifier • High current application Features • High current : IC=-2A • Complementary pair with STD1862 Ordering Information Type NO. Marking STB1277 STB1277 Package Code TO-92

STD1862L

Abstract: Transistor STD1862 STB1277 transistor cb 170 STB1277L
Contextual Info: STD1862L Semiconductor NPN Silicon Transistor Descriptions • Audio power amplifier • High current application Features • High current : IC=2A • Complementary pair with STB1277L Ordering Information Type NO. Marking STD1862L STD1862 Package Code TO-92L

2SA1036K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1036K SOT-23-3L TRANSISTOR PNP FEATURES z Large IC. IC= -500 mA z Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LH8050PLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: LH8050 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LH8550PLT1G Series FEATURE 3 ƽHigh current capacity in compact package. IC =-1.2A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: LH8550 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

L8050

Abstract: L8050 pnp sot-23 1YC L8050QLT1G LT133
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050*LT1 FEATURE 3 ƽHigh current capacity in compact package. IC = 0.8A. 1 ƽEpitaxial planar type. 2 ƽPNP complement: L8550 ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

sot-23 Marking 1Hc

Abstract: L8050HRLT1G L8050 L8050HPLT1G L8050HQLT1G L8050HSLT1G L8050HRLT1 marking 1Hc L8050HQLTIG
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series FEATURE 3 ƽHigh current capacity in compact package. IC =1.5A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series 3 FEATURE ƽHigh current capacity in compact package. IC =1.5 A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L8050H ƽPb-Free Package is available. SOT–23 DEVICE MARKING AND ORDERING INFORMATION

818B

Abstract: PNP POWER TRANSISTOR SOT23-6L high gain PNP POWER TRANSISTOR SOT23 STT818B PNP POWER TRANSISTOR "SOT23-6L" MARKING 818B SOT23 818B
Contextual Info: STT818B HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR • ■ ■ ■ Type Marking STT818B 818B VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN > 100 hFE 3 A CONTINUOUS COLLECTOR CURRENT (IC) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL

KX-K

Abstract: KX-K 4.0 MHz
Contextual Info: Tem ic SST502 Series Semiconductors Current Regulator Diodes—Pov min 45 V SST502 SST503 SST504 SST505 SST506 SST507 Product Summary Part Number lypip SST502 SST503 SST504 SST505 SST506 Anode (mA) Marking Part Number Typ If 0.43 0.56 0.75 L2 L3 L4 L5 L6

dram card 60 pin

Abstract: sm 4109 jeida dram 88 pin
Contextual Info: V /IIC R O N MT24D88C236 2 MEG x 36, 4 MEG x 18 IC DRAM CARD IC DRAM CARD 8 MEGABYTES 2 MEG x 36, 4 MEG x 18 PIN ASSIGNMENT (End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 GENERAL DESCRIPTION The MT24D88C236 is an 8 m egabyte, IC DRAM card

818B

Abstract: ON TSOP6 MARKING 6L PNP POWER TRANSISTOR SOT23-6L STT818B
Contextual Info: STT818B HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR • ■ ■ ■ Type Marking STT818B 818B VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN > 100 hFE 3 A CONTINUOUS COLLECTOR CURRENT (IC) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL

D1992

Abstract: jeida dram 88 pin
Contextual Info: MT8D88C25B32 256K x 32, 512K x 16 IC D R A M CARD I^ IC R D N IC DRAM CARD 1 MEGABYTE 256K x 32, 512K x 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access PIN# SYM BOL PIN# SYM BOL PIN# SYM B O L 1 Vss 31

HN3C13F

Contextual Info: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C13F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS 2.8 Including Two Devices in SM6 Super Mini Type with 6 Leads - 1 SYMBOL VCBO VCEO Ve b o ic Ib Pc* Tj MARKING

TLE4941C

Abstract: TLE4941 K629 Q62705-K629 k631 TLE4941-2 TLE4941-2C PSSO2 4102e 4102-E
Contextual Info: Data Sheet Supplement Differential Two-Wire Hall Effect Sensor IC TLE4941-2 TLE4941-2C For all parameters not specified in this document the TLE4941 data sheet is valid. PSSO2-1 Type Marking Ordering Code Package TLE4941-2 4102E Q62705-K629 PSSO2-1 TLE4941-2C

Contextual Info: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA