IC MARKING J LA Search Results

Contextual Info: M IC R O N MT36D436 4 MEGx 36 DRAM MODULE I DRAM „ 4 MEG x 36 dram _ IV I L .L . NEW I FAST PAGE MODE MT36D436 LOW POWER, EXTENDED REFRESH (MT36D436 L) MODULE \ J X J KJ FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access 80ns access • Packages

fairchild 1P

Contextual Info: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.

48LC

Abstract: MT18LSDT472
Contextual Info: ADVANCE 2. 4 M E G X 72 S D R A M DIM Ms |U |IC = R O N SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES OPTIONS (DE-7) 2 Meg x 72 TSOP (shown), (DE-8) 4 Meg x 72 TSOP, (DE-27) 2 Meg x 72 SOJ, (DE-28) 4 Meg x 72 SOJ MARKING • Components SO J

MC1413P

Abstract: MC1413D MC1413DR2 MC1413 mc1413bd MC1413B MC1413BDR2 MC1413BP NCV1413B NCV1413BDR2
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

bridge rectifier ic

Abstract: bdg rectifier BRIDGE-RECTIFIER 1A bridge rectifier 2A bdg single phase bridge rectifier B 80 bridge rectifier BDG-D1.0-200 Bridge rectifier SPECIFICATIONs 0-50 votls and 0-4 amp bdg single rectifier
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. Bridge Rectifiers SECTION 4 TM SUSSEX TABLE OF CONTENTS SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 TABLE OF CONTENTS DEVICE TYPE 1) PAGE NUMBER 1.0 AMP SINGLE - PHASE BRIDGE

2SB766A

Abstract: 2SD874A F MARKING
Contextual Info: 2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89  Large collector power dissipation PC  Complementary to 2SD874A M A C D Collector E B 

max 1786a

Abstract: 2SB1120 SANYO 1786A
Contextual Info: SANY O S E M I C O N D U C T O R CORP 22E 1> 7 cH 7 0 7 b OOD71bS 4 T-Z7-/3 2SB1120 % PNP Epitaxial Planar Silicon Transistor 2030 High-Current Driver Applications 1786A Applications . Strobes, voltage regulators, relay drivers, lamp drivers. Features . Low collector-to-emitter saturation volage VcE(sat max=_0,i, v ^

Contextual Info: CHIPS, M ONOLITHIC CERAM iC CAPACITORS FEATURES • Miniature size ■ Wide capacitance, T.C., voltage and tolerance range ■ Industry standard sizes ■ 8 mm and 12 mm tape & reel for auto­ placement ■ Three end termination systems available ■ Largest production volume and capacity

MC1413D

Abstract: ncv1413bdg MC1413BDG MC1413DG MC1413BDR2G pin details of ULN2003A MC1413 MC1413DR2 ULN2003A 15 pin details application PDIP16
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

Philips FA 153

Abstract: marking code 33 SMD ic SMD CAPACITORS color code SMD CAPACITORS 106 E MARKING CODE SMD IC 822 1206CG102J9BB0 SMD CAPACITORS color code chart Philips FA 564 Philips COG capacitors marking code LA SMD
Contextual Info: Ceramic Capacitors • Monolithic SMD Chip Capacitors 'i • Construction and Characteristics •IP 6 1m Ip Ip t Monolithic Construction Monolithic ceramic capacitors consist of alternating ceramic 15 to 30 microns onto which metal electrodes are printed. The stacked layers, cut into individual chips, are then

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage

Contextual Info: SANYO SEMICONDUCTOR 2SA1581, 2SC4112 CORP 25E D TTTTQTh 0QQ73S0 T r -3 7 - / 3 4 k T-3S-I P N P / N P N Epitaxial P lanar S ilic o n Tran sistors 2o isa Switching Applications with Bias R e s i s t a n c e R 1 = 2 . 2 k ß ) @2525 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

marking SH SOT23

Abstract: SH marking sot23 package marking n3 BTA1542N3 marking SH sot-23
Contextual Info: CYStech Electronics Corp. Spec. No. : C599N3 Issued Date : 2005.12.30 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1542N3 Description • Large current capability • Low collector-to-emitter saturation voltage. • High speed switching.

transistor kd 2059

Abstract: KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SA1677 2SC4397
Contextual Info: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

pa 2030a

Abstract: 2SC4520 QGQ711G K 2038
Contextual Info: SANYO SE MI COND UC TO R CORP 2SC4520 7*H707b Q0Q711G 1 22E D T ~ 3 5 ~ n % NPN Epitaxial Planar Silicon Transistor 2038 High-Speed Switching Applications 3I39 F ea tu res . Adoption o f FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage

2SB1123

Abstract: 2sd1623
Contextual Info: Ordering number: EN 1727B 2SB1123/2SD1623 N0.1727B PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBET, MBIT processes.

panasonic resistors marking code

Abstract: ERJ3EKF panasonic erj8gc ERJ12YJ erj1wy ERJ12Y ERJ8GEYJ ERJ8ENF 10 k res pack erj8
Contextual Info: Fixed Resistors Thick Film Chip Resistor ERJ Series Features • Small size and light weight For PCB size reduction and lightweight products - « * * • a* :ffi; • High reliability Metal glaze thick film resistive element and 3 layered electrode results in high reliability

Contextual Info: SEMICONDUCTOR KTC3536T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E FEATURES B K DIM A B ・Adoption of MBIT Processes. ・High Current Capacitance. 3 D G G ・High Speed Switching. C

Contextual Info: Schottky Barrier Diode Single Diode D1FJ10 Unit ‘ mm Package I 1F Weight 0.058g Typ Ä V -K v -? 1 0 0 V 1A Feature • /J ^ S M D • Ir= CD*— M — • S m all S M D 0.2mA • L o w lft=0 .2 m A Main Use • S w itc h in g R eg u la to r • D C /D C D V K -^

SOT-89

Abstract: sot-89 marking code CXT3090L SOT89 MARKING CODE
Contextual Info: Central CXT3090L Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN SILICON POWER TRANSISTOR POWER TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3090L is a Low VCE(SAT) NPN Transistor in a Power TM SOT-89 surface mount package, designed for DC-DC converters for mobile systems and LAN

MARKING dk

Abstract: 2sd1628
Contextual Info: ^ O r d e r in g num ber : EN 1 7 8 1 A 2SD1628 SA\YO NPN Epitaxial Planar Silicon Transistor i High-Current Switching Applications Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drivers. Features . Low saturation voltage.

diode pj 77

Contextual Info: Schottky Barrier Diode Diode Module Wtm D240SC4M OUTLINE 40V 240A Feature • • H igh lo R a tin g -M o d u le -P K G V 3. — I \j • fiV • L ow V f f • S m all B jc Main Use • H igh P o w e r S w itc h in g R eg u la to r •DC/DC Z\yjï-S S •

marking code for resonators

Abstract: PD74HCU04 CERAMICS CAPACITORS 0402 3975-20 low profile Ceramic capacitors 0402 land pattern frequency counter ic IC-1413
Contextual Info: Ceramic Resonators Ceramic Resonators, Chip Type EIA “1008” Shape and land pattern are the de facto standard types Industry/Field: Mobile communications, AV, OA/Information, Home appliances, Optical equipment, Amusement Small and low profile type • Development Target:

Contextual Info: Super Fast Recovery Diode Twin Diode l ^ t l l O U T L IN E DF1 0 LC 2 0 U 20 0V 10A Feature • SM D • SM D • e y 'f x • L o w N oise • tr r - 3 5 n s • tr r-3 5 n s • T .'f • S w itc h in g R eg u lator Main Use • D C /D C 3 y i{ - 9 • D C /D C C o n v e rte r