IC MARKING J LA Search Results

Contextual Info: M IC R O N MT36D436 4 MEGx 36 DRAM MODULE I DRAM „ 4 MEG x 36 dram _ IV I L .L . NEW I FAST PAGE MODE MT36D436 LOW POWER, EXTENDED REFRESH (MT36D436 L) MODULE \ J X J KJ FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access 80ns access • Packages

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 800 S E R IE S , IN T E R M E D IA T E H E A V Y D U TY F lat B ase 3 3 Marking Area H 0.88 ! +\ Mount with #8 screw, every 6 circuits - < D [ [° J h R ^ -RR 3 , -— ic i R + - 1.

fairchild 1P

Contextual Info: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.

48LC

Abstract: MT18LSDT472
Contextual Info: ADVANCE 2. 4 M E G X 72 S D R A M DIM Ms |U |IC = R O N SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES OPTIONS (DE-7) 2 Meg x 72 TSOP (shown), (DE-8) 4 Meg x 72 TSOP, (DE-27) 2 Meg x 72 SOJ, (DE-28) 4 Meg x 72 SOJ MARKING • Components SO J

Contextual Info: -el- i+ i - A e i - H P Y | Q 10 . 1 5 1 PIN 1 TDP V IE W NOTE: PIN 1 WILL BE IDENTIFIED BY PIN 1 DOT & MARKING ORIENTATION. • hl^Blaaal A □t i A AS J PARTING LINE I^ IO .IO IC I S E A T IN G PLANE I— HI— I A -D - SIDE V IEW SECTION 'B - B '

1154 GE

Abstract: CJSE045 ma7k
Contextual Info: ¿ f n i i i i r o w p r o d u c t s p e c ific a t io n w D e v ic e s . Inc. -12 3% VOLT R EGU LAT OR - 55°C TO + 1 2 5 0C type Si 1- CUST. DWG no C JSE045 Ge NPN CLASS 1 REV. PNP TO-3 - DEVI CE MARKING STANOARD \ 7 ] ia I ~S~| NOTES lbl C J S E 0 4 5

Contextual Info: ’ ON 5-ñ S DON NO. 2 B .A p r.2 0 0 4 054908 J& REV. 6 9 6 S £ 0 PS DA TE 2 ON N0TE1. P L E A S E W H IT E MARKING AS MAIN KEY IN D IC A TE D ^ 2. P L E A S E ÓV'— SELECT THE BUSHING U S A B L E R E F E R THE W . H f*l § D E S C R IP T IO N R E V ISE D

Contextual Info: ATC 600S Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0603 • Laser Marking Optional • RoHS Compliant • High Self Resonance Frequencies

NCV1413BD

Abstract: MC1413D MC1413DR2 MC1413P MC1413BP MC1413 MC1413B MC1413BD MC1413BDR2 NCV1413B
Contextual Info: Back MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

MC1413P

Abstract: MC1413D MC1413DR2 MC1413 mc1413bd MC1413B MC1413BDR2 MC1413BP NCV1413B NCV1413BDR2
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

NCV1413BD

Abstract: mc1413bd MC1413D MC1413DR2 MC1413P NCV1413B MC1413BP IR P 648 H MC1413D IC AND DIAGRAM uln2003a mc1413p
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

P-SOT89-4-1

Abstract: max 32321 ic MARKING J LA tic 41 P-SOT-323 GPS05557 marking 253
Contextual Info: Package Outlines SIEM ENS Plastic Package, P-DIP-20-1 P la s tic D ual In -L in e P a cka g e i 7.6 tO ip. 6 4 -<u |—• «V o J 1 !15max 2.54 - 20 0 .4 5 *°' J 7.0 ’ #1015] 20x 11 flU / 11 025 *1 2 25.3. 025max Index Marking P a c k a g e o u tlin e s fo r tu b e s, tra y s etc. a re c o n ta in e d in o u r

ULN2003A 15 pin details application

Abstract: MC1413BDR2G pin details of ULN2003A MC1413D MC1413DR2 MC1413P PDIP-16 MC1413 MC1413BD MC1413DR2G
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

ULN2003A 15 pin details application

Abstract: pin details of ULN2003A MC1413D MC1413D IC AND DIAGRAM ULN2003 MC1413BDR2G MC1413DR2 PDIP-16 mc1413 MC1413P
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

bridge rectifier ic

Abstract: bdg rectifier BRIDGE-RECTIFIER 1A bridge rectifier 2A bdg single phase bridge rectifier B 80 bridge rectifier BDG-D1.0-200 Bridge rectifier SPECIFICATIONs 0-50 votls and 0-4 amp bdg single rectifier
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. Bridge Rectifiers SECTION 4 TM SUSSEX TABLE OF CONTENTS SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 TABLE OF CONTENTS DEVICE TYPE 1) PAGE NUMBER 1.0 AMP SINGLE - PHASE BRIDGE

TRANSISTOR 2N338

Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Contextual Info: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

2SB766A

Abstract: 2SD874A F MARKING
Contextual Info: 2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89  Large collector power dissipation PC  Complementary to 2SD874A M A C D Collector E B 

max 1786a

Abstract: 2SB1120 SANYO 1786A
Contextual Info: SANY O S E M I C O N D U C T O R CORP 22E 1> 7 cH 7 0 7 b OOD71bS 4 T-Z7-/3 2SB1120 % PNP Epitaxial Planar Silicon Transistor 2030 High-Current Driver Applications 1786A Applications . Strobes, voltage regulators, relay drivers, lamp drivers. Features . Low collector-to-emitter saturation volage VcE(sat max=_0,i, v ^

BCX70

Abstract: BCW60 BCX70RH BCX70RG Ttt95 BCW60R BCW60RA BCW60A BCW60B BCW60C
Contextual Info: ITT S E M I C O N D / I N T E R M E T A L L SDE D 4fcrfl2711 DD 05 S7Ô ISI BCW60, BCX70 NPN S ilico n Ep itaxial P lan ar T ran sis to rs for switching and AF amplifier applications. “ I— I— !" T£ Especially suited for automatic insertion in thick- and thin-fitm

Contextual Info: CHIPS, M ONOLITHIC CERAM iC CAPACITORS FEATURES • Miniature size ■ Wide capacitance, T.C., voltage and tolerance range ■ Industry standard sizes ■ 8 mm and 12 mm tape & reel for auto­ placement ■ Three end termination systems available ■ Largest production volume and capacity

MC1413D

Abstract: ncv1413bdg MC1413BDG MC1413DG MC1413BDR2G pin details of ULN2003A MC1413 MC1413DR2 ULN2003A 15 pin details application PDIP16
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

ncv1413bdg

Abstract: MC1413DG MC1413DR2 pin details of ULN2003A ULN2003A 15 pin details application MC1413BDR2G MC1413P IR P 648 H MC1413 MC1413B
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

ncv1413bdg

Abstract: MC1413DG
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage