IC MARKING J LA Search Results

Contextual Info: M IC R O N MT36D436 4 MEGx 36 DRAM MODULE I DRAM „ 4 MEG x 36 dram _ IV I L .L . NEW I FAST PAGE MODE MT36D436 LOW POWER, EXTENDED REFRESH (MT36D436 L) MODULE \ J X J KJ FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access 80ns access • Packages

fairchild 1P

Contextual Info: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.

48LC

Abstract: MT18LSDT472
Contextual Info: ADVANCE 2. 4 M E G X 72 S D R A M DIM Ms |U |IC = R O N SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES OPTIONS (DE-7) 2 Meg x 72 TSOP (shown), (DE-8) 4 Meg x 72 TSOP, (DE-27) 2 Meg x 72 SOJ, (DE-28) 4 Meg x 72 SOJ MARKING • Components SO J

Contextual Info: -el- i+ i - A e i - H P Y | Q 10 . 1 5 1 PIN 1 TDP V IE W NOTE: PIN 1 WILL BE IDENTIFIED BY PIN 1 DOT & MARKING ORIENTATION. • hl^Blaaal A □t i A AS J PARTING LINE I^ IO .IO IC I S E A T IN G PLANE I— HI— I A -D - SIDE V IEW SECTION 'B - B '

1154 GE

Abstract: CJSE045 ma7k
Contextual Info: ¿ f n i i i i r o w p r o d u c t s p e c ific a t io n w D e v ic e s . Inc. -12 3% VOLT R EGU LAT OR - 55°C TO + 1 2 5 0C type Si 1- CUST. DWG no C JSE045 Ge NPN CLASS 1 REV. PNP TO-3 - DEVI CE MARKING STANOARD \ 7 ] ia I ~S~| NOTES lbl C J S E 0 4 5

NCV1413BD

Abstract: MC1413D MC1413DR2 MC1413P MC1413BP MC1413 MC1413B MC1413BD MC1413BDR2 NCV1413B
Contextual Info: Back MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

MC1413P

Abstract: MC1413D MC1413DR2 MC1413 mc1413bd MC1413B MC1413BDR2 MC1413BP NCV1413B NCV1413BDR2
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

P-SOT89-4-1

Abstract: max 32321 ic MARKING J LA tic 41 P-SOT-323 GPS05557 marking 253
Contextual Info: Package Outlines SIEM ENS Plastic Package, P-DIP-20-1 P la s tic D ual In -L in e P a cka g e i 7.6 tO ip. 6 4 -<u |—• «V o J 1 !15max 2.54 - 20 0 .4 5 *°' J 7.0 ’ #1015] 20x 11 flU / 11 025 *1 2 25.3. 025max Index Marking P a c k a g e o u tlin e s fo r tu b e s, tra y s etc. a re c o n ta in e d in o u r

ULN2003A 15 pin details application

Abstract: MC1413BDR2G pin details of ULN2003A MC1413D MC1413DR2 MC1413P PDIP-16 MC1413 MC1413BD MC1413DR2G
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

taj 107

Abstract: 476 10V top 227 avx taj capacitance values code marking code 68 22 I MARKING CODE Capacitance Code diode 476 k transistor case To 106
Contextual Info: TAJ, TRJ, THJ, TAW, TPS, TPM, NOJ, NOS, NOM, NPV, TAC, TPC, TCJ and TLJ Marking For TAJ, TPS & THJ, the positive end of body has videcon readable polarity marking as shown in the diagram. Bodies are marked by indelible laser marking on top surface with capacitance value, voltage and LOT code. R and P case is

bridge rectifier ic

Abstract: bdg rectifier BRIDGE-RECTIFIER 1A bridge rectifier 2A bdg single phase bridge rectifier B 80 bridge rectifier BDG-D1.0-200 Bridge rectifier SPECIFICATIONs 0-50 votls and 0-4 amp bdg single rectifier
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. Bridge Rectifiers SECTION 4 TM SUSSEX TABLE OF CONTENTS SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 TABLE OF CONTENTS DEVICE TYPE 1) PAGE NUMBER 1.0 AMP SINGLE - PHASE BRIDGE

TRANSISTOR 2N338

Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Contextual Info: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.

2SB766A

Abstract: 2SD874A F MARKING
Contextual Info: 2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89  Large collector power dissipation PC  Complementary to 2SD874A M A C D Collector E B 

max 1786a

Abstract: 2SB1120 SANYO 1786A
Contextual Info: SANY O S E M I C O N D U C T O R CORP 22E 1> 7 cH 7 0 7 b OOD71bS 4 T-Z7-/3 2SB1120 % PNP Epitaxial Planar Silicon Transistor 2030 High-Current Driver Applications 1786A Applications . Strobes, voltage regulators, relay drivers, lamp drivers. Features . Low collector-to-emitter saturation volage VcE(sat max=_0,i, v ^

MC1413D

Abstract: ncv1413bdg MC1413BDG MC1413DG MC1413BDR2G pin details of ULN2003A MC1413 MC1413DR2 ULN2003A 15 pin details application PDIP16
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

ncv1413bdg

Abstract: MC1413DG MC1413DR2 pin details of ULN2003A ULN2003A 15 pin details application MC1413BDR2G MC1413P IR P 648 H MC1413 MC1413B
Contextual Info: MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

Philips FA 153

Abstract: marking code 33 SMD ic SMD CAPACITORS color code SMD CAPACITORS 106 E MARKING CODE SMD IC 822 1206CG102J9BB0 SMD CAPACITORS color code chart Philips FA 564 Philips COG capacitors marking code LA SMD
Contextual Info: Ceramic Capacitors • Monolithic SMD Chip Capacitors 'i • Construction and Characteristics •IP 6 1m Ip Ip t Monolithic Construction Monolithic ceramic capacitors consist of alternating ceramic 15 to 30 microns onto which metal electrodes are printed. The stacked layers, cut into individual chips, are then

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage

Contextual Info: SANYO SEMICONDUCTOR 2SA1581, 2SC4112 CORP 25E D TTTTQTh 0QQ73S0 T r -3 7 - / 3 4 k T-3S-I P N P / N P N Epitaxial P lanar S ilic o n Tran sistors 2o isa Switching Applications with Bias R e s i s t a n c e R 1 = 2 . 2 k ß ) @2525 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

2SA1343

Abstract: 2SC3397 H100
Contextual Info: SAN YO S E M I C O N D U C T O R 2SA1343, 2SC3397 CORP SSE D 7^7071, 000732b 2 T-37-13 * 'T ' 3 S - / / P N P /N P N Epitaxial P lan ar S ilico n T ran sistors 2018A Switching Applications with Bias Resistances R1 =46kO, R2=23kO Ì2S5C Applications • Switching circuit, inverter circuit, interface circuit, driver circuit.

transistor npn d 2058

Abstract: k 2059 scr gate driver ic 2SA1677 2SC4397 s2e transistor
Contextual Info: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

marking SH SOT23

Abstract: SH marking sot23 package marking n3 BTA1542N3 marking SH sot-23
Contextual Info: CYStech Electronics Corp. Spec. No. : C599N3 Issued Date : 2005.12.30 Revised Date : Page No. : 1/4 PNP Epitaxial Planar Transistor BTA1542N3 Description • Large current capability • Low collector-to-emitter saturation voltage. • High speed switching.

transistor kd 2059

Abstract: KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SA1677 2SC4397
Contextual Info: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

Contextual Info: . SANYO SEMICONDUCTOR CORP EEE D • 7^ 1707^ 2SD1628 0007241= 4 T - 3 5 -15 % 2038 N P N Epitaxial Planar Silicon Transistor High-Current Switching Applications 731A Applications . Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor