IC MARKING AC 6 PIN Search Results

f os8104

Abstract: OS8104 oasis OS8300 oasis silicon systems Oasis SiliconSystems AG reference design using infineon INFINEON PART MARKING most controller Infineon Design Link
Contextual Info: SPF MOR 003 SPF MOR 003 Plastic Fiber Optic Receiver including OS8300 IC for MOST Preliminary Data Sheet The data sheet of the 4-pin MOST Optical Receiver MOR 003 has to be taken as preliminary. Samples which are delivered before the qualification and the production release are engineering

Contextual Info: MWI 45-12T6K IC25 = 43 A VCES = 1200 V VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 45-2T6K 0, 23 4 8 22 3 7 2 8 , 2 5, 6 9, 20 NTC E72873 Pin coniguration see outlines.

LH5164ASHT

Abstract: PEAK tray drawing VT12T
Contextual Info: SHARP LH5 1 6 A S 5 1 Contents 1. Description 2 2. Pin Configuration 2 3. Truth Table 3 4. Block Diagram 3 5. Absolute Maximum Ratings 4 6. Recommended DC Operating Conditions . 4 7. DC Electrical Characteristics 4 8. AC Electrical Characteristics 5 9. Data Retention Characteristics

Contextual Info: MIXA150W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA150W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.

heartbeat sensor piezo

Abstract: heartbeat sensor piezo sensor 78l05 so8 QT112 heartbeat sensor QT115H QT110 QT111 QT111-I QT115
Contextual Info: QT11x VARIATIONS QT111 QT112 QT115 Longer recalibration timeouts Faster response time Variable gain, daisy-chaining 4 August 2004 Copyright QRG Ltd. UK 4 August 2004 Quantum Research Group Ltd. QT111-I / QT111H-I QProx 8-pin Sensor See QT110 datasheet for primary information. This sheet only lists differences with the QT110.

SOT89 MARKING CODE 43

Abstract: SXTA42 43 MARKING
Contextual Info: NPN Silicon High Voltage Transistors SXTA 42 SXTA 43 High breakdown voltage ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXTA 42 SXTA 43 1D 1E Q68000-A8394 Q68000-A8650 B SOT-89

diode n04

Contextual Info: MIXA40W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Part name (Marking on product) MIXA40W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 NTC 23, 24 21, 22 19, 20 E 72873 18 3 4 7 11 8 12 Pin configuration see outlines. 13, 14 27, 28 Features:

Contextual Info: MIXA60W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA60W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 23, 24 21, 22 19, 20 NTC E 72873 18 3 4 Pin coniguration see outlines. 7 11 8 12 13, 14

MIXA30W1200TED

Contextual Info: MIXA30W1200TED Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TED 15, 16 25, 26 17 1 5 9 2 6 10 23, 24 21, 22 19, 20 NTC E 72873 18 3 4 Pin coniguration see outlines. 7 11 8 12 13, 14 27, 28 Features:

BFX60

Abstract: Q60206-X60 H7B marking H7B transistor H7B* marking microphone
Contextual Info: SIEMENS BFX 60 NPN Silicon RF Transistor • For broadband amplifiers at collector currents up to 15 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFX 60 BFX 60 Q60206-X60 Pin Configuration 1 2

BCR135T

Abstract: SC75
Contextual Info: BCR135T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR135T WJs Pin Configuration 1=B 2=E Package 3=C SC75

BCR135W

Abstract: VSO05561
Contextual Info: BCR135W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR135W WJs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR185W

Abstract: VSO05561
Contextual Info: BCR185W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR185

Contextual Info: BCR185 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR185 WNs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR153

Contextual Info: BCR153 PNP Silicon Digital Transistor Preliminary data 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR153 WBs Pin Configuration 1=B 2=E Package

BCR129T

Abstract: SC75
Contextual Info: BCR129T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k 2 C 3 1 R1 1 2 B E VPS05996 EHA07264 Type Marking BCR129T WVs Pin Configuration 1=B 2=E Package 3=C SC75 Maximum Ratings

Bf 148 TRANSISTOR

Contextual Info: BF 569W PNP Silicon RF Transistor kein Status • For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner Type Marking Ordering Code Pin Configuration BF 569W LHs 1=B Q62702-F1582 Package 2=E 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage

BCR129T

Abstract: SC75
Contextual Info: BCR129T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k 2 C 3 1 R1 1 2 B E VPS05996 EHA07264 Type Marking BCR129T WVs Pin Configuration 1=B 2=E Package 3=C SC75 Maximum Ratings

Q62702-F1519

Contextual Info: BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771W SOT-323 RBs Q62702-F1519 1=B 2=E

BCR108T

Abstract: SC75
Contextual Info: BCR108T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR108T WHs Pin Configuration 1=B 2=E Package 3=C SC75

BCR141W

Abstract: VSO05561
Contextual Info: BCR141W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=22k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR141W WDs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR166

Contextual Info: BCR166 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=4.7k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR166 WTs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR148T

Abstract: SC75
Contextual Info: BCR148T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR148T WEs Pin Configuration 1=B 2=E Package 3=C SC75

BCR116W

Abstract: VSO05561
Contextual Info: BCR116W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k; R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR116W WGs Pin Configuration 1=B 2=E Package 3=C SOT323