IC L00A Search Results

Contextual Info: S P E C 1 F 1 CAT 1 ON D EVICE NAME : S IL IC O N DIODE TYPF NAME : E RW O SPEC. : No. 1 - 0 6 0 DATE F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAME APPROVED "S' 1 Q Fuji Electric Coglici o CHECKED zc 1

L00A

Abstract: ic l00a si6954
Contextual Info: Tem ic SÌ6954DQ S e m i c o n d u c t o r s Dual N-Channel 30-V D-S Rated MOSFET Product Summary V u s(V ) rDS(on) (Q ) I d (A ) 0.065 @ VGS= 10 V ± 3 .9 0.095 @ VGS = 4.5 V ± 3.1 30 T SSO P-8 ;<JE Ô Si Ô s. N -Channel M O SFET N-Channel M OSFET T S S O P -8

SP-23TA

Abstract: HA13403 HA13403MP HA13403V MP28 MP-28
Contextual Info: H A 1 3 4 0 3 /V /M P T h re e -p h a s e Brushless M otor D river HA13403Ü, 3 fà - fÿ ÿ i^ x D C y' ÿy IC T~to <r> F 7 t L T ffifl L ^ HA13403 í f l f f t l . 5 A / f f l 26V T"í> 9 ,VTR • 4$ ë • <, t B Ä t S W W E E A M 'S v ^ iz ^ ^ rao , •m w s r

MG75H6EL1

Contextual Info: MG75H6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P O WER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L APPL ICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode.

MAX2400

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100Q2YK1 HIGH POWER SWITCHING APPLICATIONS, MOTOR CONTROL APPLICATIONS. Unit in ram FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.

Contextual Info: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: S P E C I F I C A T I ON • 25367^2 000437=1 TTT ■ Ratings and characteristics of Fuji IGBT 1 M B H 1 OD — 1 2 0 2- Equivalent circuit 1. Outline Drawing C:Collector G:Gate o- FWD C O N N E C T IO N ■ i GATE © CO LLECTO R i Q EM ITTER 3. Absolute maximum ratings

m210 g

Abstract: J3E diode
Contextual Info: 2DI100Z-100 iooa : Outline Drawings POWER TRAN SISTO R MODULE ÌR 25 F e a tu re s • S W JÏ High Voltage • 7 'J — jfr-f y — KrtflK • A S O A 'J ÏIl' • ÿfeiiïïi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • Æ liÉ ^ A p p lic a t io n s

MG75H2YS1

Abstract: ic l00a l00a
Contextual Info: GTR MODULE SILICON N CHANNEL IG8T MG75H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 3-M 5 , 2 3±0.5, 2 3±0.5^ 82 4-FA ST-ON TAB # 1 10 2-<45.6±0.3 • High Input Impedance . High Speed : tf=l.Oys Max. trr=0•5 ys(Max.)

LP2980AIM

Abstract: BDI sot23 SOT-23 bdi L028 LP2980AIMSX-3.3 207827 NATIONAL SEMICONDUCTOR 2n4403 L018 DIIH1053 L01A
Contextual Info: National Semiconductor O ctob e r 1994 LP2980 M icro p ow er SOT, 50 mA Ultra Low -D ropout R egulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator de­ signed specifically to m eet th e requirem ents o f battery-pow ­

SN1000

Abstract: negative temperature coefficient devices 1n4148 1n4148 zener diode zener 1n4148 LM199 1n4148 die GR01 ZENER 1N4148 Datasheet Zener 35v dip 1N4148
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V

LM199

Abstract: LTZ1000 1n4148 die chip 1n4148 die Thermocouple 2N3904 ZENER 1N4148 Datasheet 1N4148 LTZ1000A LTZ1000ACH LTZ1000CH
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference U FEATURES • ■ ■ ■ ■ DESCRIPTIO 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized The LTZ1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V

LT 0206

Abstract: 1N4148 tempco 1N414* zener 2N3904 die marking h8 LM199
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES DESCRIPTION • The LTZ 1000 and LTZ1000A are ultra stable temperature controllable references. They are designed to provide 7V outputs with temperature drifts of 0.05ppm/°C, about 1.2µVP-P of noise and long term stability of 2µV/√k⎯ ⎯H⎯r.

1N4148 tempco

Abstract: ZENER 1N4148 1N414* zener Thermocouple 2N3904 LTZ1000 LM199 lt1021 Zener noise LTZ1000A LTZ1000ACH
Contextual Info: LTZ1000/LTZ1000A Ultra Precision Reference FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.2µVP-P Noise 2µV/√kHr Long Term Stability Very Low Hysteresis 0.05ppm/°C Drift Temperature Stabilized 400°C/W Thermal Resistance for LTZ1000A reduces insulation requirements

NJM062

Abstract: ic njm4558 pin diagram
Contextual Info: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062

VIPER100

Abstract: viperl 500 watt smps schematic VIPER100 Application Note VIPER100ASP VIPER100A VIPER100SP VIPER100 300 watt mosfet amplifier Fc-0013 Fc0013 SGS-Thomson
Contextual Info: SGS-THOMSON V IP e r 1 0 0 /S P VI P e r l 0 0 A /A S P M IM i[Li gïïlHΩiD(3S SMPS PRIMARY I.C. AD VA N C E DATA TYPE V In dss R D S (o n ) V IP e r l 00/S P 600V 3 A 2.5 V IP e r l 0 0 A /A S P (*) 670V 3 A 3 .3 a a (*) In d e v e lo p m e n t FEATURE

tokin 792

Abstract: DIODE marking l01A SIEMENS capacitor tantalum marking L01A
Contextual Info: LP2980 & National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator d e ­ signed specifically to m eet the requirem ents o f b attery-pow ­ ered applications.

Contextual Info: Thf» materni and the Information htretn It the property of Fuji Electric Co.,ltd. They shall ba neither reproduced, copied» lent, or diietated tn any way whatsoever for the u«e of any third party nor used for the manufacturing purpotai without the «qrait written eaiientof Fi|1 Bectrte Co.,Lld.

rft katalog

Abstract: transistor vergleichsliste dl 8205 VEB mikroelektronik mikroelektronik RFT "halbleiterwerk frankfurt" DL074D katalog rft TRANSISTOR KATALOG rft mikroelektronik
Contextual Info: [fin ] D[k ä rä fs J E I S l n b r 1! Bipolare digitale Schaltkreise Low -Pow er-S chottky-TTL S c h o ttky -T T L -In te rfa c e -S e rie n il- c Bipolare digitale Schaltkreise Low-Power-Schottky-TTL Sch ott ky-TTL-l nterf a ce-Se r ie Vorwort Der vorliegende Katalog ist vor allem für Konstrukteure und Geräteentwickler

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D APT30M45JNR 300V 70A 0.045a APT30M50JNR 300V 65A 0.050Í2 O s ISOTOP* "UL Recognized" Rie No. E145S92 S POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS All Ratings: Tp = 25°C unless otherwise specified.

SS1001

Abstract: transistor bc 570 GS3A 2sk7884 5a2 DIODE
Contextual Info: TOSHIBA {DISCRETE/OPTO} n De I ^ D T T S S O 99D 1674 5 9097250 TOSHIBA <DISCRETE/OPTO DDlb 7 4 S b DT-^-IS TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR 2 S K 7 8 8 SILICON N CHANNEL HOS TYPE 7T-MOSI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in mm

F1S50N06

Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
Contextual Info: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model

X3700

Abstract: T10601 nec 2401 uPD16631A 1F42 uPD16631 S240 PD16631A muaj
Contextual Info: MOS Integrated Circuit / P D 16631A 2 4 0 f f l* T F T - L C D ff lV “ - ^ • 64PgKfcfj£ /¿PD16631AU, 64PgfiflS^WH5COTFT-LCDfflV-^ • K ^ - f/<?•*-<> x - ^ A ^ l * , M X # ) WT-'i/ffrXlJT, 6t'-y h X 6 hMdc (2 5 X 2 ffli0 ^ * a p (C « i:U y t t jE S n t 6 4 t t t t * l- < i:* 2 6 7 3 fe 0 7

Contextual Info: Si GEC PLESSEY _PRELIMINARY INFORMATION S E M I C O N D U C T O R S ACE9030 RADIO INTERFACE AND TWIN SYNTHESISER ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor