IC DS 2020 Search Results

ic ds 2020

Contextual Info: Tem ic TPOIOIT/TS S e m i c o n d u c t o r s P-Channel Enchancement-Mode MOSFET Product Summary I d A V d s (V ) TP0101T *DS(on) (Q ) TP0101T (PO)* TP0101TS (PS)* ♦Marking Code for TO-236 TP0101TS D 0.65 @ VGS = -4.5 V -0.6 -1.0 0.85 @ VGS = -2.5 V -0.5

Contextual Info: SAMSUNG^ S EM IC ON D UC TOR INC DS - - • • ; - KS5194 DE§ 7 ^ 4 1 4 2 ^. • - □DOSt.fiE 0 | 582 - - T - H D 3 - 15 CM O S DIGITAL INTEGRATED CIRCUIT 5 FUNCTION 4 DIGIT WATCH CIRCUIT WITH ALARM AND CHIME FOR DUPLEXED LCD The KS5194 is a low threshold voltage, Ion implanted metal gate C M O S

Contextual Info: M an A M P company Broadband Eight-Way Power Divider 20 - 2000 MHz DS-808-4 V2.00 Features • Tw o-D e c a d e F ie q u e n c y R a n g e • H igh Iso la tio n - 2 0 dB M in • T y p ic a lM id b a n d VSW R 1 2 i Guaranteed Specifications* From - 55°C to + 85°C

N-Channel Depletion-Mode MOSFET

Abstract: TA 7061 52426 ND2020L
Contextual Info: Temic ND2012L/2020L Semiconductors N-Channel Depletion-Mode MOSFET Transistors Product Summary P a rt N um ber V<BR DSV M in V) ND2012L ND2020L 200 Features • • • • • High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Q Low Input and Output Leakage

Contextual Info: Te m ic siiiconix_ ND2012L/2020L N-Channel Depletion-Mode MOS Transistors Product Summary Part Number v BR DSV ND2012L Min (V) r i)S(on) Max (£2) 200 ND2020L Id Vg s (oB) (V) (A) 12 -1.5 to - 4 0.16 20 -0.5 to -2.5 0.132 For applications information see AN901, page 12-46.

Contextual Info: SSH9N80A Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 800 V ^ D S o n = 1 . 3 Q. o ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

Contextual Info: SSF8N80A Power MOSFET FEATURES Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 800 V ^ D S o n = 1 . 5 Q. o II ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

Contextual Info: Advanced SSF9N80A Power MOSFET FEATURES - 800 V ^ D S o n = 1.3 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.000 £1 (Typ.) CD

ysm7

Abstract: TDA2020 TDA 2020 Application TDA HI-FI 20w tda GA-08 TDA 2020 TDA2Q20 8N11 TDA 1275
Contextual Info: S G S-THONSON 07E D I . J VJ i 7 T 5 tl.S3? a 01 Efc.bE 3 J C H IC U N U U L LINEAR INTEGRATED CIRCUITS I U K V -U K T K 1 t V £ 1 " ' ' • TDA2020 i i L 1 j 3 NOT FOR NEW DESIGN 20W Hi-Fi AUDIO AMPLIFIER The T D A 2020 is a monolithic integrated operational amplifier in a 14-lead quad in-line plastic pa­

TDA2020

Abstract: ic TDA 2020 N1216 TDA 2020 Application 30w tda power amplifier ic TDA2020 IC
Contextual Info: S G I 07E D 7^2*1237 Q012fc.bS 3 L S-THONSON j o i j * n n . U N U U L i U K v-UKr £ « /C /¿C . J . . TDA2020 LINEAR INTEGRATED CIRCUITS m 1 N O T F O R NEW D E S I G N 20W H i- F i A U D I O A M P L I F I E R The T D A 2020 is a monolithic integrated operational amplifier in a 14-lead quad in-line plastic pa­

24VGS

Abstract: F7101 IRF7101 IRF7325 MS-012AA
Contextual Info: PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile <1.8mm ● Available in Tape & Reel ● ● VDSS Ω) RDS(on) max (mΩ) ID -12V 24@VGS = -4.5V 33@VGS = -2.5V ±7.8A 49@VGS = -1.8V

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

LTS 547 EH

Contextual Info: Preliminary inform ation AS29F080 II 5V 1M x 8 CMOS Flash ÜPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equalsectorarchitecture - Erase any com bination o f sectors o r fu ll chip • Single 5 D± 0 5 V pow e r supply ib rread /w rite opeiations

IRFB22

Abstract: IIRF823R IRF820R IRF821R IRF822FI IRF822R IRF823R thermal impedance GI 312 diode
Contextual Info: Rugged P ow er M O S F E T s _ IRF820R, IRF821R, IRF822R, IRF823R F ile N u m b e r 2020 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A an d 2.5A, 45 0 V -5 0 0 V rDs on = 3 .0 0 an d 4 .0 fi N-C H AN N EL E N H A N C E M E N T M O D E

Contextual Info: æ HCS165MS HARRIS S E M I C O N D U C T O R Radiation Hardened Inverting 8-Bit Parallel-lnput/Serial Output Shift Register September 1995 Features • Pinouts 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T16, LEAD FINISH C

Contextual Info: HCS165MS fü HARRIS S E M I C O N D U C T O R Radiation Hardened Inverting 8 -Bit Parailel-lnput/Serial Output Shift Register September 1995 Pinouts Features • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C

Contextual Info: 3 September 1995 HCS166MS Radiation Hardened 8 -Bit Paraiiel-Input/Serial Output Shift Register Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C • Total Dose 200K RAD (Si)

z08030

Abstract: TDA 2020 Application Z0803006CME Z0803004CMB z0803006 M/TDA 2016 Z08030-04CMB TDA 2020 z080300
Contextual Info: | ¿ illO y Z8030 Military Z8000 Z-SCC Serial Communications Controller Military Electrical Specification D ecem ber 1989 FEATURES • Two independent, 0 to 1.5M bit/second, full-duplex channels, each with a separate crystal oscillator, baud rate generator, and Digital Phase- Locked Loop for clock

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

800V 40A mosfet

Abstract: SSF9N80A SSH9N80A
Contextual Info: Advanced SSH9N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge D S S — ^ D S o n = lD = ■ E xtended S afe O pe ra ting A rea

SSF8N80A

Contextual Info: SSF8N80A P o w e r MOSFET FEATURES BV • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 25 |a.A M ax. @ V DS = 800V ■ Low : 1.000

800V 40A mosfet

Abstract: SSF9N80A
Contextual Info: Advanced SSF9N80A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 6 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Contextual Info: Z I L0 <5 I N C ’ Q3 D m 1 T A M D M 3 OOOfllflO =1 O Z I L r Z8036 Military Z8000^ Z-CIO Counter/Timer _ and Parallel I/O Unit T “ 5 2 ~ 3 3 " Military Electrical Specification ¿ iliU V j July 1985 FEATURES • Two independent 8-bit, double-buffered, bidirectional I/O