IC 846 L Search Results

Contextual Info: InNET TECHNOLOGIES technologies! w T2230R w Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S : TURNS R A W : 1.4 : 1.4 : 1 : 1 ± 2X ( 1 -3 ) : (2 -4 ) : (7 -9 ) : (8 -1 0 ) INDUCTANCE : ( 1 - 4 ) WITH (2,3) CONN. : 846 TO 1034uH O 0.1 Vac, 10KHz

Contextual Info: InNET TECHNOLOGIES te c lln o ^ ^ e j j 3 t T2 2 2 8 Electrical (REV. X E L E C T R IC A L S P E C IF IC A T IO N S : TURNS RATIO: 1.4 : 1.4 : 1 : 1 ± 2% (1 -3 ) : (2 -4 ) : (7 -9 ) : (8 -1 0 ) INDUCTANCE: ( 1 - 4 ) WITH (2,3 ) CONN. G> : 846 TO 1034uH O O.IVac, 10KHz

4678T

Abstract: 4665T
Contextual Info: T O S H IB A TMP87C446/846/H46 CM OS 8 -BIT M IC R O C O N TR O LLER TMP87C446N, TMP87C846N, TMP87CH46N 87C446/846/H 46 are h ig h speed and hig h p e rfo rm a n ce 8 -bit sin g le chip m icro co m p u ters. T h ese M CU co n ta in CPU co re , RO M , R A M , in p u t/o u tp u t p o rts, an A/D c o n v e rte r, six m u lti-fu n c tio n tim e r/c o u n te rs , a se ria l

C1741

Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
Contextual Info: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP

C1507

Abstract: b 857 Q62702-C1741 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750 sot-23 MARKING CODE 1Gs C1741 C1761
Contextual Info: NPN Silicon AF Transistors ● ● ● ● ● BC 846 . BC 850 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP

C2310

Abstract: transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC c2308 BC840 transistor marking bc 8 marking 2 AW
Contextual Info: NPN Silicon AF Transistor BC 846 W . BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W,

1Bs sot-23

Abstract: sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30
Contextual Info: BC 846 . BC 850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856, BC 857, BC 858 BC 859, BC 860 PNP

BC848

Abstract: BC847
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,

code 2F 850

Abstract: BC850
Contextual Info: NPN Silicon AF Transistors • • • • • For AF input stages and d river a pplications High cu rre n t gain Lo w c o lle c to r-e m itte r saturation voltage Lo w noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BC 856, BC 857, BC 859, BC 860 PNP

transistor c2311

Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

LT 450 mbr

Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,

5252 F 1006

Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Contextual Info: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n

ic 846 l

Abstract: LTV816S-TP LTV-816 ir 846 LTV-816S-TP LTV846S model 846 Liteon tl-130
Contextual Info: L IT E - O N T E CH NO L O G Y CO RP O RAT IO N Property of LITE-ON Only FEATURES * Current transfer ratio CTR : MIN. 50% at IF = 5mA, VCE = 5V * High input-output isolation voltage ( Viso = 5,000Vrms ) January 2010 * Response time ( tr : TYP. 4µs at VCE = 2V, IC = 2mA, RL = 100Ω )

Contextual Info: Photocoupler Product Data Sheet LTV-816/ 826/ 846 M, S, S-TA, S-TA1, S-TP Series Spec No.: DS-70-97-0013 Effective Date: 04/21/2010 Revision: F LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

Liteon tl-130

Abstract: LTV-816STA1-V LTV-816 LTV816V LTV816
Contextual Info: L IT E - O N T E CH NO L O G Y CO RP O RAT IO N Property of LITE-ON Only FEATURES * Current transfer ratio CTR : MIN. 50% at IF = 5mA, VCE = 5V * High input-output isolation voltage ( Viso = 5,000Vrms ) June 2010 * Response time ( tr : TYP. 4µs at VCE = 2V, IC = 2mA, RL = 100Ω )

LTV846S

Abstract: LTV846-V LTV-816 b 816 4pin 826m LTV816S LTV816S-V LTV826S-V LTV846 mark code t4 diode
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-816 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV816-V : 1-channel type / LTV826-V : 2-channel type /

transistor bc 487

Abstract: transistor bc 488 sot-323 transistor marking code 15
Contextual Info: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

F21E

Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,

transistors BC 848

Abstract: VSO05561 21E sot
Contextual Info: BC 846W . BC 850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856W, BC 857W, BC 858W 2

1bs sot323

Abstract: BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

1bs sot323

Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
Contextual Info: BC846W.BC850W NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP

BC8488

Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
Contextual Info: BC846.BC850 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type

BC846AT

Abstract: BC846BT BC846T BC847AT BC847BT BC850T BC856T BC857T BC858T BC859T
Contextual Info: BC846T.BC850T NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC850T 1

BC857

Abstract: BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856
Contextual Info: BC846.BC850 NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain 3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type