IC 828 TRANSISTOR Search Results

2SK1828

Abstract: 2SK182
Contextual Info: TOSHIBA 2SK1828 T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S TYPE 2 S K 1 828 H IG H SPEED S W IT C H IN G A P P L IC A T IO N S A N A L O G S W ITC H A P P L IC A T IO N S 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V

Contextual Info: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0 .H Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BF840 Collector-base voltage open emitter

R005 FZ

Abstract: transistors C 828 BF841 BF840 ic MARKING FZ
Contextual Info: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors M a y in g BF840 = NC BF841 = ND PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70 0.50 2.6 1.4

BF840

Abstract: BF841 transistors marking ND transistors C 828
Contextual Info: BF840 BF841 IL SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m _3.0_ 2.8 0.48 0.38 0.14 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 6 2.4 J1’ .0 2 ! 0.89 0.60 0.40

.W07B

Abstract: W07b 722G 2SB828 2SB82B 2SD1064 as1012
Contextual Info: Ordering number: EN 722G 2SB828/2SD1064 N0.722G PNP/NPN Epitaxial P lan ar Silicon Transistors 50V/12A Switching Applications A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F e a tu re s

2SD1741

Abstract: 2SB1171 2SB1171A 2SD1741A ic 4604 tc 4604
Contextual Info: Power Transistors 2 S D 1 7 4 1 , 2SD1741, 2SD1741A 2 S D 1 7 4 1 A Silicon P N P Triple-Diffgsed P lanar Type P ackage Dim ensions Pow er Amplifier T V Vertical Deflection Output Pair with 2 S B 1 171, 2 S B 11 71 A • Features • High DC cu rre n t gain Iife and good linearity

2SC2121

Abstract: cannon terminal g25a AC42C
Contextual Info: 2 5 2 / 'J D > N P N = » E « y . - y - J B h > ; ^ SILICON NPN TRIPLE DIFFUSED M ESA TRANSISTOR O » » E E * 4 S’ T o High Voltage Switching Applications •  i Œ T t y?m ; v < S Î n M Œ ^ sÎS^> ; Unit In C! E S = 7 5 0 V v CE sat = 5v (Max.) at Iq= 4A , Ijj=1A

SOT23 marking 828

Abstract: 46 marking
Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3

C 828 Transistor

Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9
Contextual Info: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE

Contextual Info: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol

Contextual Info: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode (trr: 200ns). The mounting base of the

Contextual Info: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220

Contextual Info: TIP42;A TIP42B;C _ J V SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. NPN complements are TIP41 series.

bd 825 10

Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Contextual Info: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,

C 828 Transistor

Abstract: transistor 828 transistor c 828 B 828 transistor 3ALF 828 transistor BUX50 iC 828 Transistor C3F5A C 828 a Transistor
Contextual Info: BUX 50 NPN S ILIC O N TR A N S IS TO R , TR IP L E D IF F U S E D MESA T R A N S IS TO R N P N S IL IC IU M , M ESA T R IP L E D IF F U S E T E N T A T IV E D A T A N O T IC E P R O V IS O IR E Driver stage fo r high voltage power transistor Etage p ilo te p o u r tran sistor de puissance

Contextual Info: MOTOROLA Order this document by MRF2000–5L/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistor MRF2000-5L Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. • Designed for Class A or AB, Common Emitter Power Amplifiers

BT 816 transistor

Abstract: transistor bt 808 BT 815 transistor 2SD807 BT 812
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

K83 Package

Abstract: MPQ1050 transistor k84 MHQ2221 MPQ2221 MPQ2222 MPQ105
Contextual Info: MPQ1050 SILICON QUAD DUAL-IN-LINE NPN SILICON QUAD DUAL-IN-LINE NPN SILICON HIGH-CURRENT SWITCHING TRANSISTOR HIGH-CURRENT SWITCHING TRANSISTOR . . . designed for high-current, high-speed switching applications. • Low Colflector-Emitter Saturation Voltage —

Contextual Info: TOSHIBA 3SK153 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K 1 53 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS. + 0.2 2 .9 - tt 3 • Superior Cross Modulation Performance.

Contextual Info: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

dta144es

Abstract: DTA144EU
Contextual Info: DTA144EU/DTA144EK/DTA144ES/DTA144EF DTA144EL/DTA144EA/DTA144EV h -7 > v 7-. £ / J ransistors D T A 1 4 4 E U /D T A 1 4 4 E K /D T A 1 4 4 E S D T A 1 4 4 E F /D T A 1 4 4 E L /D T A 1 4 4 E A DTA1 4 4 E V r> '^ b h7>y^^ Y ^ ' y y 7 ,^ X ' f y 3-/Transistor Switch

2sk2843

Contextual Info: TO SHIBA 2SK2843 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2843 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •

2SC799

Abstract: transistor 2sa564 2sa564 transistor 2SA564 25X1 2SA539
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

MG200H1AL2

Abstract: iC 828 Transistor 828 TRANSISTOR equivalent MG200H1 transistor 828
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H1AL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain : hpE=80 Min. (Ic=200A) . Low Saturation Voltage