IC 824 J Search Results

Contextual Info: AWT919D TX POWER MMIC E W iDIGIG* Advanced Product Information Your GaAs IC Source REV: 1 900/1900 MHz Dual Band DAMPS GaAs Power Amplifier IC DESCRIPTION: The AW T919D is a highly integrated GaAs monolithic Power Amplifier suited for both 824 - 849 MHz AMPS/DAMPS and

BLM31A700SP

Contextual Info: E m m c s AWT920 TX POWER MMIC * Advanced Product Information Your GaAs IC Source Rev 0 900/1900 MHz Dual Band AMPS /PCS GaAs Power Amplifier IC DESCRIPTION: VD1_A VD2_A The AWT920 is a highly integrated GaAs monolithic Power Amplifier suited tor both AMPS 824 - 849

Contextual Info: Preliminary Specifications M an A M P com pany Low-Cost Three-Way Power Splitter/Combiner 824 - 960 MHz DS53-0001 SO-8 Features • Sm all Size and Low P rofile PIN! • Ind ustry Stand ard SO IC -8 SM T Plastic P ack ag e .2284-.2440 .1497-.1574 5.80-6.20

LTV-814S-TP

Abstract: ltv844 814 8 pin ic
Contextual Info: L IT E - O N T E CH NO L O G Y CO RP O RAT IO N Property of LITE-ON Only FEATURES * AC input response * High input-output isolation voltage Viso = 5,000Vrms Jan 2011 * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * Current transfer ratio

Contextual Info: NewHoOVDC SERIES LR Isolated Regulated up to 5 Watt DC-DC Converters Wide Input Range/up to 3.33:1 Fully Regulated r - j£ s S T All Units Shielded " FEA TU R ES: • Voltage regulation over input of LRE LRF LRA LRB LR C • Encapsulated semiconductors, conservatively

Contextual Info: SERIES MR Wide In p u t-L o w P ro file.300 MILITARY DC-DC CONVERTERS • Diodes JAN TX • T ran sfo rm ers M an u factu red to M IL -T -27 T F5S 03ZZ • Capacitors MIL-C 5536514 M IL-C39003103 MIL-C 20/27E MIL-C 39014/05 MIL-R-22097 • Resistors MIL-R-39017

Contextual Info: High Power SPDT Switch CXG1189AXR Description The CXG1189AXR is a high power SPDT Single Pole Doble Throw switch MMIC used in wireless communication systems, for example, GSM handsets, GSM/UMTS dual mode handsets. The Sony JPHEMT process is used for low insertion loss.

50ht2

Abstract: BL01RN1-A62 vapc PF1010A Hitachi DSA0064
Contextual Info: PF1010A MOS FET Power Amplifier Module for P/C LAN ADE-208-106A Z 2nd. Edition July 1996 Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Low voltage operation: 6 V Low power control current: 300 µA Typ

Hitachi DSA002719

Contextual Info: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone ADE-208-378A Z 2nd Edition July 1996 Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for π/4-DQPSK • Simple Pout control: Controllable by VAPC

S824

Abstract: z66d
Contextual Info: S N 54A S 823, SN 54A S 824 SN 74A S 823, SN 74A S 824 9 BIT BUS INTERFACE FLIP FLOPS W ITH 3 STATE OUTPUTS D 2 8 2 5 , JU N E 1 9 8 4 -R E V IS E D J A N U A R Y 1 9 8 6 Functionally Equivalent to A M D 's A M 2 9 8 2 3 and A M 2 9 8 2 4 S N 54A S 823 . . . JT PACKAGE

Contextual Info: ANALOG DEVICES FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 |aA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V / jas No Phase Reversal APPLICATIONS Photo Diode Preamplifier

vapc

Abstract: BL01RN1-A62 PF0231A ADE-208-378A Hitachi DSA0046
Contextual Info: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone ADE-208-378A Z 2nd Edition July 1996 Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for π/4-DQPSK • Simple Pout control: Controllable by VAPC

IRF48

Abstract: IRF100S IRE5D IRF100 IRF12S PICO Electronics IRA series IRA9S IRF28D IRE48S IRE15S
Contextual Info: PICO E L E C T R O N I C S INC s 3E j> 7 im i3 0 O O O O flfl? S ER IES IR Isolated Regulated up to 10 Watt DC-DC Converters Wide Input Range/up to 3.33:1 Fully Regulated All Units Shielded F EATU RES: nutput • Voltage regulation over input of LO W IIR E

GSM900RX

Contextual Info: 3P9T Antenna Switch Module for GSM/CDMA Dual Mode Handsets CXM3542ER Description The CXM3542ER is 3P9T anntena switch module for quad bands GSM and triple bands CDMA dual mode. This IC has a decoder circuit which supports CMOS control. Sony JPHEMT GaAs process is utilized for low insertion loss and high linearity.

Contextual Info: PF0045A/PF0065A MOS FET Power Amplifier Module for AMPS Handy Phone HITACHI ADE-208-309B Z Preliminary 3rd. Edition July 1996 Features • High efficiency PF0045A: 58 % Typ at 1.2 W PF0065A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input

Contextual Info: INTEGRATED CIRCUITS 74F821 /822/823/824/825/826 Bus interface registers Product specification 1996 Jan 05 IC15 Data Handbook Philips Semiconductors PHILIPS Philips Semiconductors Product specification Bus interface registers 74F821 74F822 74F823 74F824 74F825

BGY110A

Abstract: 40801 NPN planar RF transistor 824 transistor
Contextual Info: D EVELO PM EN T DATA 41E: • T llG Ô E b 0026457 h B IP H IN 11 BGY110A Jl T h is data sheet c o n ta in s a dvance in fo rm a tio n a n d sp e cific atio n s are sub{ect to cha nge w it h o u t notice. P H IL IP S INTERNATIONAL T -7 Y ~ 0 M UHF A M P L IF IE R M O D U L E

pf0030 hitachi

Abstract: Hitachi PF0030 Hitachi DSA00100 pf0030 amplifier G746 PF0030 PF0032
Contextual Info: PF0030 Series MOS FET Power Amplifier ADE-208-460 Z 1st. Edition July 1996 Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt Ordering Information Type No Operating Frequency Application PF0030

3580A

Abstract: CXM3580AUR
Contextual Info: SP4T + SP6T Antenna Switch Module for 6TRx/2Tx/2Rx with SPI I/F CXM3580AUR Description The CXM3580AUR is a SP4T+ SP6T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The CXM3580AUR has a +1.8 V CMOS compatible decoder with SPI function. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.

SP4T Antenna Switch

Abstract: CXM3580AUR
Contextual Info: SP4T + SP6T Antenna Switch Module for 6TRx/2Tx/2Rx with SPI I/F CXM3580AUR Description The CXM3580AUR is a SP4T+ SP6T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The CXM3580AUR has a +1.8 V CMOS compatible decoder with SPI function. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.

M57741

Abstract: M57741H M57741M M57741L PO 168 CO 824
Contextual Info: - 300 - g fllt ft «s m îs • M 5 7 7 3 7 H # « ffi : S g S : i - ? y •?•*. ?, A ÎE fê * a m tt « § 2 X f- ÿ „ a V cc V • r^ iü ^ Jo t&ifilîM (21. 7dB)o 17.0 m. s f range(MHz) f i 'i ' mm 144. 0 H A ] SË * 148.0 f tt 7.0 Po(W) 30. 0

prepreg voltage isolation

Contextual Info: 3P10T Antenna Switch for GSM/UMTS Dual Mode Phones CXM3543AER Description The CXM3543AER is 3P10T anntena switch for quad bands GSM and quad bands UMTS dual mode. This IC has a decoder circuit which supports CMOS control. Sony JPHEMT GaAs process is utilized for low insertion loss and high linearity.

Contextual Info: SP9T Antenna Switch Module for GSM/UMTS Dual-Mode Handset CXM3559ER The CXM3559ER is a SP9T antenna switch module for GSM/UMTS Dual-mode handset. The CXM3559ER has a built-in dual low pass filter and a +1.8 V CMOS compatible Decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and linearity.

PO 903

Contextual Info: - H - «fe a À M 5 7 7 7 5 mm H Ü : f ifïîc : b 7 y i? 7, ? , 3 X x — ^ o f f i i ê : U H F 8 0 6 ^ 8 6 6 M H z w 0. 4W, a n FM 11. 0 15. 0 Po(mW) Pin(m W ) T c (m a x) f ra n g e (M H z) 10. 0 A H M ftfë : CO* 110. 0 I FM ^ f t It i ^Jo i^ if lJ i# ( ^ 2 3 d B ) o