IC 630 Search Results

Contextual Info: 2SC4116 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 16 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : VcEO = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (Ic = 0.1mA) / hpg (Ic = 2mA) = 0.95 (Typ.)

A205K

Abstract: 8-40 UNS-2A
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y 1T C O E L E C T R O N IC S -, P U B L IC A T IO N R IG H T S 2 - REVISIONS RESERVED. AD C O R P O R A T IO N . 00 D E S C R IP T IO N A' NOTES: 1. ALL MATERIALS AND FINISHES

Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC + 0.38 - 0 .0 0 + .015 RESERVED. C O R P O R A T IO N . R E V IS IO N S D IS T 00 AA D E S C R IP T IO N

Contextual Info: ill# ICW0RKS Advance Information W156 Spread Spectrum FTG for VIA MVP4 Features • l2C interface for programming • Maximized EMI suppression using IC W O R K S ’ Spread Spectrum Technology • Single chip im plem entation • Power m anagem ent control inputs

belfuse 4 amp

Contextual Info: bel Type R ST R o H S 6 Com pliant Tim e Lag Radial Lead M ic ro Fuse Series RSTD0808 Catalog Number Ampere Ratiug W Resistance ohm Electrical Characteristics ta U f a 2.1 2.75 to ta 10 (Voi) max. (A2 Sec) 3.30 0.40 0.01 0.01 0.10 RST 100 100mA 2.20 0.35

Contextual Info: H A 1 6 6 6 2 MP, H A 16682M P HDD Interface Circuit Description The H A 16662M P/682M P m onilithic IC is designed for ST-506 interface logics in hard disk drive memory systems. Functions • • • • • RS-422 receiver, driver pair ST-506 interface line driver

Contextual Info: ¿a Pulse E lectronics w w w .p u ls e e le c tro n ic s .c o m NOTES: UNLESS OTHERWISE SPECIFIED —- . 5 4 - - THIS IS A RoHS COMPLIANT C O M PO N EN T/PR O D U C T. A LL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER.

Contextual Info: I n ter n a tio n a l 1N3305 S e m ic o n d u c to r , I n c . thru 50 WATT ZENER DIODES 1N3350 MAXIMUM RATINGS Operating Tem perature: Storage Tem perature: DC Power Dissipation: -65 °C to +175 °C -65 °C to +175 °C 50 Watts at 75 °C Power Derating: 0.5 W /°C above 75 °C

Contextual Info: TO SH IBA TLRE160A T O S H IB A LED L A M P In G a A iP RED LIGHT E M ISS IO N TLRE160A A N E L C IRCUIT IN D IC A T O R Unit in mm 3.1mm DIAMETER Tl ¿ 3 .8 i0 .g InGaAiPRED LED All Plastic Mold Type. Colorless Clear Lens Low Drive Current, High Intensity Red Light Emission

Contextual Info: Programmable Digital Timer •SAB 0529 Bipolar 1C Type ■ SAB 0529 ■ SAB 0529 G Ordering Code Package Q 67000-H 2176 P-DIP-18 Q67000-H2952 P-DSO-2Q SMD With the digital tim er SAB 0529, delay times between 1 second and 31 1/2 hours can be set. Time base is the 50 Hz line frequency. A triac may be triggered by the SAB 0529 IC.

TC160G33

Abstract: TC160G11 TC160G22 TC160G16 TC160G70 TC140G TC160G
Contextual Info: TOSHIBA T O S H I B A A M E R I C A E L E C T R O N IC C O M P O N E N T S , I N C . Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series o p e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D 16.0 [.630] 7.5 [.295] A n 13.5 [.531] 7.3 [.287] 3.5 [.138] -I 3.0 [.1 18] C A 0.8 0.5 [.031] TYP 0.4 [.016] TYP 0.5 [.020] 6 PLC

TLP634

Abstract: 037g
Contextual Info: TLP633,634 GaAs IRED a PHOTO-TRANSISTOR TLP633 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. Unit in mm The TOSHIBA TLP633 and TLP634 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a

Contextual Info: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: 3.3 V CMOS 16-BIT 3.3V TO 5V LEVEL SHIFTING TRANSCEIVER 3-STATE OUTPUTS FEATURES: - 0.5 MICRON CMOS Technology - Typical - tsK o (Output Skew) < 250ps IDT74ALVC164245 ADVANCE INFORMATION D E S C R IP T IO N : This 16-bit 3.3V to 5V level shifting transceiver is built using advanced

Contextual Info: 3.3V CMOS 16-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - 0.5 MICRON CMOS Technology - Typical - tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) - 0.635mm pitch S SO P, 0.50mm pitch T SSO P,

Contextual Info: 3.3 V CMOS 18-BIT UNIVERSAL BUS DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) - 0.635mm pitch SSOP, 0.50mm pitch TSSOP,

Contextual Info: 3.3V CMOS 16-BIT TRANS­ PARENT D-TYPE LATCH WITH 3-STATE OUTPUTS AND BUS-HOLD FE A T U R E S : - - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 0.635mm pitch SSOP, 0.50mm pitch TSSOP,

Contextual Info: 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) - 0.635mm pitch SSO P, 0.50mm pitch TSSO P,

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

Contextual Info: • IDT 70S DG127M0 >402.5771 ■ D bbE Integrated Device Technology, Inc. FAST CMOS 16-BIT REGISTERED TRANSCEIVER FEATURES: > Common features: - 0.5 MICRON CMOS Technology - High-speed, low-power CMOS replacement for ABT functions Typical tsK o (Output Skew) < 250ps

CHN 752 diode

Abstract: diode LN 4148 TLC 2740
Contextual Info: TLC27M4, TLC27M4A, TLC27M4B, TLC27M9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS D 3 1 4 3 , OCTOBER 1 9 8 7 -R E V IS E D OCTOBER 1 99 0 D. J. OR N PACKAGE T rim m e d O ffs e t V o lta g e : TOP VIEW T L C 2 7 M 9 . . . 9 0 0 /*V M a x a t 2 5 °C ,

Contextual Info: 3.3V CMOS 20-BIT BUFFER WITH 5 VOLT TOLERANT I/O BE :888í:i8fí¡ FEATURES: - Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 0.635mm pitch SSOP, 0.50mm pitch TSSOP and 0.40mm pitch TVSOP packages

Contextual Info: 3.3V CMOS 20-BIT UNIVERSAL BUS DRIVER WITH 3-STATE OUTPUTS BE FEATURES: - 0.5 MICRON CMOS Technology - Typical tsK o (Output Skew) < 250ps - ESD > 2000V per MIL-STD-883, Method 3015; - IDT74ALVC162836 D E S C R IP T IO N : This 20-bit universal bus driver is built using advanced dual metal