IC 358 SO8 Search Results

LM324WDT

Abstract: LM358dt LM324PT EK 110 INTERNAL CIRCUIT DIAGRAM OF LM324 LM324DT LM324 - Low Power Quad Op-amp ic LM2904ST LM2904DT LM2904WPT
Contextual Info: TECHNICAL NOTE SIGNATURE SERIES Universal Standard Ground Sense Op-Amp. LM358 family, LM324 family, LM2904 family, LM2902 family ●Description The Universal Standard family LM358/324, LM2904/2902 monolithic ICs integrate two independent op-amps and phase

LM324DT

Abstract: LM324PT LM358DT LM358D-T LM324WD LM324WDT st 2902 LM2902DT
Contextual Info: TECHNICAL NOTE SIGNATURE SERIES Universal Standard Ground Sense Op-Amp. LM358 family, LM324 family, LM2904 family, LM2902 family ٨Description The Universal Standard family LM358/324, LM2904/2902 monolithic ICs integrate two independent op-amps and phase compensation capacitors on a single chip

LM358DP

Abstract: NE532D LM2904D NE532N SA532D 358a 2904 OP AMP se532 ne532
Contextual Info: INTEGRATED CIRCUITS NE/SA/SE532 LM258/358/A/2904 Low power dual operational amplifiers Product data Supersedes data of 2001 Aug 03 File under Integrated Circuits, IC11 Handbook Philips Semiconductors 2002 Jan 22 Philips Semiconductors Product data NE/SA/SE532/

LM2904DP

Abstract: LM358DP lm2904n LM358 LM2904 PHILIPS 2904 2904 d NE532D se532 OP-AMP datasheet download LM2904D
Contextual Info: INTEGRATED CIRCUITS NE/SA/SE532 LM258/358/A/2904 Low power dual operational amplifiers Product data Supersedes data of 2002 Jan 22 Philips Semiconductors 2002 Jul 12 Philips Semiconductors Product data NE/SA/SE532/ LM258/358/A/2904 Low power dual operational amplifiers

ne532

Contextual Info: INTEGRATED CIRCUITS NE/SA/SE532 LM258/358/A/2904 Low power dual operational amplifiers Product data Supersedes data of 1995 Nov 27 File under Integrated Circuits, IC11 Handbook Philips Semiconductors 2001 Aug 03 Philips Semiconductors Product data NE/SA/SE532/

MAS1173ASAA

Abstract: MAS1173ASAA-T MAS1173ATAA AAEI
Contextual Info: ✁☎✄✝✆✞✆✞✟✞✠ ✂ ✡ ☛✌☞✎✍✑✏✌✒✔✓✖✕ ✓✔✓✘✗✚✙✖✓✔✕ ✓✖✓✜✛✣✢✎✤✥☛✘✏✎✦★✧★✩✎✪✬✫✥✍★✧✑☛✘✡ ✫✎✫✭✪✮✩✘✍✯✏ ✰✲✹✲✱✴✺✴✳✜✻✜✵✶✼✽✱✲✺✴✷✶✻✿✸ ✾❁❀

MAS1173ASAA

Abstract: MAS1173ASAA-T MAS1173ATAA aaei AAEI So8 FIN-02770
Contextual Info: ✁☎✄✝✆✞✆✞✟✞✠ ✂ ✡ ☛✌☞✎✍✑✏✌✒✔✓✖✕ ✓✔✓✘✗✚✙✖✓✔✕ ✓✖✓✜✛✣✢✎✤✥☛✘✏✎✦★✧★✩✎✪✬✫✥✍★✧✑☛✘✡ ✫✎✫✭✪✮✩✘✍✯✏ ✰✲✹✲✱✴✺✴✳✜✻✜✵✶✼✽✱✲✺✴✷✶✻✿✸ ✾❁❀

Micronas Semiconductor

Abstract: MAS9128A MAS9128AS MAS9128AS-T voltage regulator 2.85V sleep mode
Contextual Info: DA9128A.002 July 12, 1998 0$6$ /'2 9ROWDJH 5HJXODWRU ,& •ÃUu…rrÃy‚Ãq…‚ƒ‚ˆ‡Ã‰‚y‡htrÅrtˆyh‡‚…† •ÃSrtˆyh‡‚…Ãrhiyrqv†hiyrÃp‚‡…‚y •ÃQ‚r…Æh‰vtÆyrrƒÃ€‚qr •Uur…€hył‡rp‡v‚ 9@T8SDQUDPI

MAS9128A

Abstract: MAS9128AS MAS9128AS-T d9ca
Contextual Info: ✁☎✄✝✆✟✞✟✠✟✡✟✁ ✂ ☛✌☞✎✍✑✏✓✒✌✔ ✕✗✖✙✘✛✚✢✜✌✚✙✘✌✣✌✔ ✖✤✕✥✒✌✦★✧ ✩ ✪✬✽✤✫✮✾✰✭✿✮✯✰❀✬✯✙❁ ❂✰✱ ✲✬❃ ❄✬✳✵❅❆✾✰✴✬❇✮✭ ✲✮❂✰✶✬❈✮✲✮❁ ✾✥✷✬❉ ❊✮✸✮❋✹✰●✥✲✮❂✰✱ ❈✮✸ ✺✰❁ ✾✙✻✮✯✙❍✥❄✬✭ ✯✰❇✮✻✮❃ ❅ ✷✬❄✮✱ ❁✺✰✸ ✲✬✭ ✼

MAS9128A

Abstract: MAS9128AS MAS9128AS-T capacitor 8d ae
Contextual Info: ✁☎✄✝✆✟✞✟✠✟✡✟✁ ✂ ☛✌☞✎✍✑✏✓✒✌✔ ✕✗✖✙✘✛✚✢✜✌✚✙✘✌✣✌✔ ✖✤✕✥✒✌✦★✧ ✩ ✪✬✽✤✫✮✾✰✭✿✮✯✰❀✬✯✙❁ ❂✰✱ ✲✬❃ ❄✬✳✵❅❆✾✰✴✬❇✮✭ ✲✮❂✰✶✬❈✮✲✮❁ ✾✥✷✬❉ ❊✮✸✮❋✹✰●✥✲✮❂✰✱ ❈✮✸ ✺✰❁ ✾✙✻✮✯✙❍✥❄✬✭ ✯✰❇✮✻✮❃ ❅ ✷✬❄✮✱ ❁✺✰✸ ✲✬✭ ✼

BLT13

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor Preliminary specification File under Discrete Semiconductors, SC08b 1996 Apr 12 Philips Semiconductors Preliminary specification UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency

GP 821

Abstract: BLT61 MS-012AA
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain

TEA1103

Abstract: SSOP16 SSOP20 TEA1102 TEA1202TS TEA1206T TEA1210TS SAA1501 SAA1500T
Contextual Info: Philips Semiconductors Managing mobile power with smar t power & batter y management solutions To meet the requirements of power and battery management in today’s mobile equipment, we have developed a complete range of battery-management solutions that includes the highest efficiency DC/DC converters.

ic lm258n

Abstract: LM358 equivalent K408 LM358N equivalent 104 aec capacitor K408 so-8 K405 lm358 so-8 opamp lm358 so-8 symbol opamp Lm358 pin function
Contextual Info: LM158-LM258-LM358 Low power dual operational amplifiers Features • Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator essentially independent of supply voltage

Contextual Info: Tem ic SÌ4925DY S e m i c o n d u c t o r s Dual P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) rDS(on) (Œ) I d (A ) 0.032 @ VGS = -1 0 V ±6.1 0.045 @ VGS = -4.5 V ±5.1 30 SO-8 []“ [X s2 [T XI °i ~H D, ~6~| D2 G2 I 4 ~ n d2 Si Gi G2 n

LM358 equivalent

Abstract: TRANSISTOR k405 K408 MARKING LM358AN LM358N equivalent opamp Lm358 pin function k408 LM258N equivalent ic lm358n LM258ST
Contextual Info: LM158-LM258-LM358 Low power dual operational amplifiers Features • Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator essentially independent of supply voltage

B 315 D

Abstract: SOT89 pq SOT494 SOD89 SOT233 SOT89 Package pq TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 4 250 B 340 smd Transistor msc377
Contextual Info: CHAPTER 6 PACKING METHODS page Introduction 6-2 Glossary of terms 6-2 Packing methods in exploded view 6-3 Packing quantities, box dimensions and carrier shapes 6 - 13 Philips Semiconductors Discrete Semiconductor Packages Packing Methods Chapter 6 INTRODUCTION

transistor bd139

Abstract: philips power transistor bd139 BD139 smd transistor zi
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency

Si4558DY

Contextual Info: SÌ4558DY Vishay Sîliconix N- and P-Channel 30-V D-S MOSFET P R O D U C T SU M M ARY V d sO n N-Channel P-Channel R o s (on ) iß ) Id W 0.04 0 VGS = 10 V ±6 0.060 @ V q s = 4 .5 V ±4.B 30 0.040 @ VGs = “ 10 V ±6 0.070 @ V q S = “ 4-5 V ±4.4 -30

KMZ51

Abstract: Philips application note using kmz51 kmz51 philips KMZ51 application Wheatstone Bridge amplifier KMZ51 Product Specification BP317 MS-012AA SC17 Thin-film magnetic resistance
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ51 Magnetic field sensor Product specification Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 Philips Semiconductors Product specification Magnetic field sensor KMZ51 PINNING

sot446

Abstract: sot482a MSC090 SOD89
Contextual Info: SC18_1999_.book : SC18_CHAPTER_6_1999 1 Wed May 12 11:40:55 1999 CHAPTER 6 PACKING METHODS page Introduction 6-2 Glossary of terms 6-2 Packing methods in exploded view 6-3 Packing quantities, box dimensions and carrier shapes 6 - 13 SC18_1999_.book : SC18_CHAPTER_6_1999

UBA2022

Abstract: philips cfl internal circuit UBA2030 SO24 UBA2021 UBA2032 UBA2070 cfl ballast Wien Bridge Oscillator application UBA2000
Contextual Info: Philips Semiconductors Managing a brighter world with lighting power and control solutions With our long-standing history in lighting, we can offer our customers one of the most extensive ranges of integrated solutions meeting all current and future lighting needs.A range accompanied by our expertise in

k175

Abstract: LM324 TSV321-TSV358-TSV324 of lm358 TSV324ID st v324ip LM358 TSV321 TSV321RILT TSV324
Contextual Info: TSV321-TSV358-TSV324 General Purpose, Input/Output Rail-to-Rail Low Power Operational Amplifiers • Operating at VCC = 2.5V to 6V ■ Rail-to-rail input & output ■ Extended Vicm VDD - 0.2V to V CC + 0.2V ■ Capable of driving a 32Ω load resistor ■

k175

Abstract: marking e3 sot23-5 8 pin ic lm324 LM324 so14 sot23 mark code e3 of lm358 TSV358 V324IP LM324 LM358
Contextual Info: TSV321-TSV358-TSV324 General Purpose, Input/Output Rail-to-Rail Low Power Operational Amplifiers • Operating at VCC = 2.5V to 6V ■ Rail-to-rail input & output ■ Extended Vicm VDD - 0.2V to V CC + 0.2V ■ Gain bandwidth product: 1.3MHz ■ High stability: 500pF