IC 2000 Search Results

ic 4060 internal circuit

Abstract: CD 4060 internal circuit ic 4060 pin diagram 2030 ic circuit diagram EQUIVALENT IC for IC CD 4060 CD 4060 PIN DIAGRAM ic cd 4060 pin diagram PST9239 PST9 PST9242
Contextual Info: IC for System Reset PST92XX MITSUMI IC for System Reset Monolithic IC PST92XX Series July 18, 2000 Outline This IC is a reset IC with a delay circuit which realizes high-precision detection accuracy and is provided in an ultra-small package. Features 1. Internal delay circuit

2030 ic circuit diagram

Abstract: ic 4060 pin diagram ic 4038 PST92XX EQUIVALENT IC for IC CD 4060
Contextual Info: IC for System Reset PST92XX MITSUMI IC for System Reset Monolithic IC PST92XX Series July 18, 2000 Outline This IC is a reset IC with a delay circuit which realizes high-precision detection accuracy and is provided in an ultra-small package. Features Delay time can be set with an external capacitor.

2SD2015

Abstract: FM20
Contextual Info: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C

ic 4018 pin diagram

Contextual Info: IC for System Reset PST93XX MITSUMI IC for System Reset Monolithic IC PST93XX Series August 3, 2000 Outline This IC is a low-reset type system reset IC and in a variety of CPU systems and other logic systems, to detect supply voltage and reset the system accurately when the power is turned on or interrupted.

PST9340

Abstract: PST9341 PST9342 PST9343 PST9344 PST9345 PST9346 PST93XX
Contextual Info: IC for System Reset PST93XX MITSUMI IC for System Reset Monolithic IC PST93XX Series August 3, 2000 Outline This IC is a low-reset type system reset IC and in a variety of CPU systems and other logic systems, to detect supply voltage and reset the system accurately when the power is turned on or interrupted.

Contextual Info: IC for System Reset PST92XX MITSUMI IC for System Reset Monolithic IC PST92XX Series July 18, 2000 Outline This reset IC in an ultra-compact package provides highly accurate detection and includes a delay circuit. Features 1. Delay circuit 2. High detection accuracy

2SD2015

Abstract: FM20 w605
Contextual Info: 2SD2015 Silicon NPN Triple Diffused Planar Transistor V BR CEO IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ

Contextual Info: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)

2SD2633

Abstract: 84AB 2sd26
Contextual Info: Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE sat VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25ºC) Unit µA mA V External Dimensions TO220F (full-mold)

2SD1796

Abstract: relay 12v 3a datasheet FM20
Contextual Info: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A

TPT5609

Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Contextual Info: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)

SAP16

Abstract: SAP16N SAP16P SAP16N equivalent SAP16*p sap16n circuit
Contextual Info: Equivalent circuit C Application: Audio –160 V –5 V IC –15 A IB –1 A 150 Tc=25°C W 10 mA IEBO VEB = – 5V VCEO IC = – 30mA –160 hFE ✽ VCE = – 4V, IC=–10A 5000 typ max Unit –100 µA –100 µA (36°) V 20000 VCE (sat) IC = – 10A, IB =–10mA

2SD2014

Abstract: 2SB1257 FM20 S8010
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2SD2017

Abstract: FM20
Contextual Info: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W

2SD2014

Abstract: 2SB1257 FM20
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2sd2083

Abstract: transistor 2sd2083 2sb1383
Contextual Info: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max

2SB1259

Abstract: 2SD2081 FM20 12v dc to 6v dc
Contextual Info: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)

2SD2017

Abstract: FM20
Contextual Info: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W

2SD2081

Abstract: 2SB1259 FM20 451a
Contextual Info: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)

2sd2083

Abstract: 2sb1383
Contextual Info: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max

Contextual Info: SMD Power Transistors Part No. Polarity IC VCEO PC A (V) (W) hFE @ VCE & IC Min. VCE IC (V) VCE(sat) @ IC & IB IC IB (A) Max. (V) (A) (A) fT @ VCE & IC Typ. VCE (MHz) (V) Pins Package (A) 123 Reel IC MJD44H11 NPN 8.0 80 20 60 1 2.00 1.00 8.0 0.4 50 10.0

an97036

Abstract: NAS to MS cross reference ISO7816 TDA8004AT transistor SMD t15 3.3.V POWERED MICROCONTROLLER
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8004AT IC card interface Product specification Supersedes data of 2000 Feb 29 2004 May 10 Philips Semiconductors Product specification IC card interface TDA8004AT FEATURES APPLICATIONS • 3 or 5 V supply for the IC GND and VDD

an97036

Abstract: ISO7816 TDA8004AT AN9703 TRANSISTOR SMD typ 056
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8004AT IC card interface Preliminary specification File under Integrated Circuits, IC02 2000 Feb 29 Philips Semiconductors Preliminary specification IC card interface TDA8004AT FEATURES APPLICATIONS • 3 or 5 V supply for the IC GND and VDD

2SD2045

Contextual Info: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max