IBM0116 Search Results

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

IBM0116400M

Contextual Info: IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High • Package: • 4,194,304 word by 4 bit organization by 4 High • Low Power Dissipation per deck

IBM01164004M

Abstract: IBM0116400B4M IBM0116400M IBM0116400P
Contextual Info: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply

Contextual Info: IBM0116180 IBM0116180B A d van ce 1M x 18 DRAM Features • 1,048,576 w ord by 18 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 4096 refresh cyd e s/6 4 m s • Low Power Dissipation - Active max - 9 5m A /85m A /75m A /65m A

0116405

Contextual Info: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO ORAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

0316809c

Contextual Info: Alphanumeric Index Part Num ber Type O rganization Features Page Num ber IBM011616 0. D R A M . 1M x 1 6 . 12/8, 5 .0 V . . 249 IBM0116160 B . . D R A M . 1M x 1 6 . 12/8, 3 .3 V . 249

IBM01161651M

Abstract: IBM0116165B1M IBM0116165M1M IBM0116165P1M
Contextual Info: IBM01161651M x 1612/8, 5.0V, EDO. IBM0116165P1M x 1612/8, 3.3V, EDO, LP, SR. IBM0116165M1M x 1612/8, 5.0V, EDO, LP, SR. IBM0116165B1M x 1612/8, 3.3V, EDO. IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization

Contextual Info: IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • Low Power Dissipation - Active max - 85 mA / 75 mA / 65 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only)

Contextual Info: IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

IBM0116160BJ3-70

Contextual Info: IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM01161601M x 1612/8, 5.0VMMDD35DSU-011010627. IBM0116160P1M x 1612/8, 3.3V, LP, SRMMDD35DSU-011010627. IBM0116160M 1M x 1612/8, 5.0V, LP, SRMMDD35DSU-011010627. IBM011616B1M x 1612/8, 3.3VMMDD35DSU-011010627.

0116405

Contextual Info: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V + 0.3V or 5.0V + 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IBM0116400M IBM0116400P 4M x 4 Low Power DRAM Features • 4,194,304 w ord by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply • 4096 refresh cycles/256m s • High Perform ance: -50 -60 -70 • Low Power Dissipation - A ctive max - 95m A /85m A /75m A /65m A

Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • Low Power Dissipation • 4 ,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4 096 Refresh Cycles

IBM0116160BJ3-50

Abstract: IBM01161601M IBM0116160P1M IBM011616B1M ibm0116
Contextual Info: IBM01161601M x 1612/8, 5.0V. IBM0116160P1M x 1612/8, 3.3V, LP, SR. IBM0116160M 1M x 1612/8, 5.0V, LP, SR. IBM011616B1M x 1612/8, 3.3V. IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply

0118160B

Abstract: 0116165B 014400B 0117805 014400
Contextual Info: Alphanumeric Index Part Number Type Organization Features Page Number IBM 0116160. .DRA M . . 1M x 16. 12/8, 5 . 0 V .343 IBM0116160M .D R A M . . 1 M x 16. 12/8, 5.0V, LP, S R .343

IBM01164004M

Abstract: IBM0116400B4M IBM0116400M
Contextual Info: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply

IBM01164054M

Abstract: IBM0116405B4M IBM0116405M4M IBM0116405P4M
Contextual Info: IBM01164054M x 412/10, 5.0V, EDO. IBM0116405P4M x 412/10, 3.3V, EDO, LP, SR. IBM0116405M4M x 412/10, 5.0V, EDO, LP, SR. IBM0116405B4M x 412/10, 3.3V, EDO. IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization

Contextual Info: IBM01164B0 IBM01164D0 4M x 4 Stacked DRAM Features • 4,194,304 word by 4 bit organization by 2 High Low Power Dissipation per deck - Active (max) - 85mA/75mA - Standby (TTL Inputs) - 1 .0mA (max) - Standby (CMOS Inputs) - 1 ,0mA (max) • 4,194,304 word by 4 bit organization by 4 High

Contextual Info: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features 1,048,576 word by 16 bit organization Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply Standard Power SP and Low Power (LP) 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V + 0.3V or 5.0V + 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)