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Catalog Datasheet	Type	Document Tags	PDF
D1788 Contextual Info: Part Number: Integra IB1011S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S250 is designed for L-Band radar systems operating	Original	ib1011s250 1090mhz ib1011s250-rev-nc-ds-rev-a d1788	PDF
Contextual Info: Part Number: Integra IB1011M70 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M70 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.	Original	ib1011m70 ib1011m70-rev-pr1-ds-rev-nc	PDF
Contextual Info: Part Number: Integra IB1011S1500 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S1500 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this	Original	ib1011s1500 ib1011s1500-rev-nc-ds-rev-c	PDF
transistor d2118 Abstract: IB1011S190 d2118 D2118 transistor Contextual Info: Part Number: Integra IB1011S190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this	Original	ib1011s190 ib1011s190-rev-nc-ds-rev-d transistor d2118 d2118 +1d2118 transistor	PDF
Contextual Info: Part Number: Integra IB1011M190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S at VCC = 50V, this	Original	ib1011m190 ib1011m190-rev-nc-ds-rev-nc	PDF
Contextual Info: Part Number: Integra IB1011M10 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011M10 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.	Original	ib1011m10 ib1011m10-rev-nc-ds-rev-nc	PDF
Contextual Info: Part Number: Integra IB1011M1100 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M1100 is designed for TCAS avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 32µs, 2%, at VCC = 60V, this	Original	ib1011m1100 ib1011m1100-rev-nc-ds-rev-nc	PDF
Contextual Info: Part Number: Integra IB1011L470 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011L470 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S-ELM pulse burst	Original	ib1011l470 ib1011l470-rev-nc-ds-rev-b	PDF
Contextual Info: Part Number: Integra IB1011S350 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S350 is designed for L-Band radar systems operating	Original	ib1011s350 1090mhz d1977-2 ib1011s350-rev-nc-ds-rev-nc	PDF
Contextual Info: Part Number: Integra IB1011M660 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M660 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S pulse burst conditions at	Original	ib1011m660 ib1011m660-rev-nc-ds-rev-a	PDF
Contextual Info: Part Number: Integra IB1011L15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L15 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.	Original	ib1011l15 ib1011l15-rev-nc-ds-rev-b	PDF
D1790 Contextual Info: Part Number: Integra IB1011S70 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S70 is designed for L-Band radar systems operating	Original	ib1011s70 1090mhz ib1011s70-d1790	PDF
Contextual Info: Part Number: Integra IB1011L110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L110 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.	Original	ib1011l110 ib1011l110-rev-nc-ds-rev-b	PDF
IB1011M1000 Contextual Info: Part Number: Integra IB1011M1000 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M1000 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under simple mode S pulse conditions	Original	ib1011m1000 ib1011m1000-rev-nc-ds-rev-nc	PDF

Contextual Info: Part Number: Integra IB1011S1000 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S1000 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 50V, this	Original	ib1011s1000 ib1011s1000-rev-nc-ds-rev-nc	PDF
Contextual Info: Part Number: Integra IB1011M20 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M20 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.	Original	ib1011m20 ib1011m20-rev-pr1-ds-rev-nc	PDF
Bd 585 transistor Contextual Info: Part Number: Integra IB1011L220 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L220 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.	Original	ib1011l220 ib1011l220-rev-pr1-ds-rev-nc bd 585 transistor	PDF
Contextual Info: Part Number: Integra IB1011M140 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.	Original	ib1011m140 ib1011m140-rev-nc-ds-rev-nc	PDF
Contextual Info: Part Number: Integra IB1011L40 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L40 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.	Original	ib1011l40 ib1011l40-rev-nc-ds-rev-d	PDF
Contextual Info: Part Number: Integra IB1011M350 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M350 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under Mode S pulse burst conditions at	Original	ib1011m350 ib1011m350-rev-nc-ds-rev-nc	PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original	upc8236 mrfe6vp m74 7 segment display mounting and soldering of rf transistors +6mobile jammer gsm 1800 mhz circuit diagram blf4g08ls-160a rf amplifier mhz doherty 470-860 rf transceiver 802.11ac an10882 m74 7 segment display input	PDF
filter for GPS spice Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode Contextual Info: RF手册第14版用于高性能RF产品的应用和设计手册2010年5月恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用恩智浦RF手册令设计更简易恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率	Original	rf20105 67sige jesd204a-dacadc jesd204a-+15aec100 bfr90 bfq33 tff1004hn jesd204a blf578 filter for gps spice diode smd marking buf gp 750 blf7g10-300p ax 2008 lqfp48 gp 809 diode bf1118 mpal2731m15 bgu7051 bb 505 varicap diode	PDF
MPF102 spice model Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for	Original	te121 mpf102 spice model blf278 mosfet hf amplifier blf4g08ls-160a +7x-band mmic core chip blf4g08ls-160 bit 3713 ib3135 toshiba smd marking code transistor bgu7041 tea6848h	PDF
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Contextual Info: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	prf957 tff1003hn tff1007hn tff1014hn +16tff1015hn tff1017hn tff11070hn tff11073hn tff11077hn tff11080hn ba 7891 ng bts 2140 1b tff1014 blf4g08ls-160a bf1107 spice model bf862 spice model rf transceiver 802.11ac multiple output lnb 802.11ac bgu6104	PDF

IB1011 Search Results

IB1011 Datasheets Context Search

D1788

transistor d2118

D1790

IB1011M1000

Bd 585 transistor

UPC8236

filter for GPS spice

MPF102 spice model

BA 7891 NG