IA54 Search Results

zup series

Abstract: rs485 to rs232 Nemic-Lambda LAMBDA zup hyperterminal* rs232 NC401 RS232 DB9 cable dwg hyperterminal ASCII NC403
Contextual Info: NEMIC-LAMBDA LTD ZUP SERIES COMMUNICATION TEST SET UP using Hyper Terminal Windows software DWG No: IA549-04-03 Prepared Checked Approved TEST PROGRAM: ZUP COMMUNICATION VIA HYPERTERMINAL 1 Equipment: PC with HyperTerminal of Windows, ZUP Power Supply,

IA5250

Abstract: IA5450A IA5000 db9 dimensions
Contextual Info: Serial-to-Ethernet Device Servers NPort IA5000A Series 1, 2, and 4-port serial device servers for industrial automation ››Enhanced surge protection for serial, LAN, and power ››2 KV isolation for serial signals ››Rugged screw-type terminal blocks for power and serial

IRF7476

Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
Contextual Info: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance

IRF7317

Abstract: MS-012AA
Contextual Info: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V

Irf7314

Contextual Info: P D - 9.1436B International l R Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V T echnology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V dss = ^D S o n = -20V 0.058Î2 Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: HM5164805F Series HM5165805F Series 64 M EDO DRAM 8-Mword x 8-bit 8 k Refresh/4 k Refresh HITACHI ADE-203-1057 (Z) Preliminary Rev. 0.0 May. 25, 1999 Description The Hitachi HM5164805F Series, HM5165805F Series are 64M-bit dynamic RAMs organized as 8,388,608-word x 8-bit. They have realized high performance and low power by employing CMOS process

power mosfet so8 FL

Contextual Info: PD- 93899 PROVISIONAL IRF7453 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See App. Note AN1001

PP-1040

Contextual Info: Plastic material - Polypropylene, PP-1040 Flammability Rating -UL94-HB, UL File NO. E216959 Temperature Range: -10°C to +100°C Springs - Nickel Plated Spring Steel Wire - 26 AWG, UL1007, CSA Rivets - Brass, Nickel Plated 9Volt Snaps - Brass, Nickel Plated

Contextual Info: Plastic material - Polypropylene, PP-1040 Flammability Rating -UL94-HB, UL File NO. E216959 Temperature Range: -10°C to +100°C Springs - Nickel Plated Spring Steel Wire - 26 AWG, UL1007, CSA Rivets - Brass, Nickel Plated 9Volt Snaps - Brass, Nickel Plated

Contextual Info: Plastic material - Polypropylene, PP-1040 Flammability Rating -UL94-HB, UL File NO. E216959 Temperature Range: -10°C to +100°C Springs - Nickel Plated Spring Steel Wire - 26 AWG, UL1007, CSA Rivets - Brass, Nickel Plated 9Volt Snaps - Brass, Nickel Plated

DIODE S2

Abstract: 21A 8 BALL IRF6156
Contextual Info: PD - 94592 IRF6156 Ultra Low RSS on per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode † Description l FlipFET Power MOSFET VSS 20V RSS(on) max

IRF7451

Abstract: AN1001 IRF74 13-AB
Contextual Info: PD- 93898A IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

84Fo

Abstract: IRF7379 EIA48
Contextual Info: PD - 91625 IRF7379 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 30V -30V RDS on 0.045Ω 0.090Ω

Contextual Info: PD - 9.1436B IRF7314 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V RDS on = 0.058Ω T op V iew Description

Contextual Info: PD- 93843 PROVISIONAL IRF7463 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification Benefits Low Gate Impedance to Reduce Switching Losses l Ultra-Low RDS on at 4.5V VGS l Fully Characterized Capacitance Including

Contextual Info: PD- 93898 PROVISIONAL IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

6a0f

Contextual Info: APPLICATION NOTE 6.1 ETX.EXE - ETHERNET DEBUG SOFTWARE By Nestor Bersamira & Tony Lagana ETX FEATURES • • • • • • • • • • • • • • • • • • • EVALUATION SOFTWARE CONTROLLERS FOR LAN91C92, LAN91C94 & LAN91C100 ETHERNET LOW LEVEL DEBUG SOFTWARE, WORKS WITHOUT DRIVER AND NETWORK OPERATING

800w power inverter circuit diagram

Abstract: Lambda-GP485 neptune digital Energy Meter M8 NC405 Nemic-Lambda power supply unit zup20-40 user manual NEMIC LAMBDA supply Circuit diagram coutant power supply coutant power supply 5V NEMIC-LAMBDA ZUP10-80 LAMBDA zup
Contextual Info: DENSEI-LAMBDA ZERO-UP 200W/400W/800W Programmable DC Power Supplies Constant Voltage/Constant Current Built-in RS232 & RS485 Interface with GPIB option. C US LISTED . TESTING EQUIPMENT TUV Rheinland 65SA . geprufte Sicherheit USER'S MANUAL KARMIEL INDUSTRIAL ZONE, POB 500, ZC-20101, ISRAEL.

T8A250V

Abstract: 800w power inverter circuit diagram NEMIC LAMBDA supply Circuit diagram transistor Arm 3055 equivalent coutant coutant power supply 5V nc302 zener diode for 240v ac voltage remote control LAMBDA zup
Contextual Info: GLOBAL NETWORK Europe / North America Asia / Far East / Middle East NORTH AMERICA Lambda Americas, Inc. 3055 Del Sol Boulevard San Diego, CA 92154 Tel: +1-800-LAMBDA-4 Tel: +1-619-575-4400 Fax: +1-619-429-1011 www.lambdapower.com Densei Lambda KK, 5F Dempa Bldg, 1-11-15 Higashigotanda,

DTMF KEYPAD

Abstract: MA545 keypad dtmf generator marconi electronic devices ltd A545
Contextual Info: Marconi Electronic Devices L D /D T M F Keypad S w itchable Repertory Dialler Chip w ith Last N um ber Redial Facility M A545 FEATURES * S electable lo o p d is c o n n e c t o r D T M F d ia llin g m odes. * K eypad s w itc h a b le fro m LD to D T M F * 2 4 -d ig it Last N u m b e r Redial F acility

Contextual Info: PD -91865 IRF7555 PRELIMINARY HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V

C8X1

Contextual Info: PD- 93842 PROVISIONAL IRF7455 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification Benefits Ultra-Low RDS on at 4.5V VGS l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See

irf7317

Contextual Info: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V

Contextual Info: PD- 93898A IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001