I840 Search Results

IRFI840G

Abstract: EK24
Contextual Info: IRLI530NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K "

IRF 250V 100A

Contextual Info: IRFW/I840A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .8 5 ^ 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

Contextual Info: IRFW/I840A • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 0 . 8 5 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) : 0.638 £1 (Typ.) > Avalanche Rugged Technology

Contextual Info: IRFW/I840A A d van ced Power MOSFET FEATURES - 500 V ^DS on = 0.85Q B ^D S S > a ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

IRFI840G

Contextual Info: PD- 95427A IRLI3705NPbF • Lead-Free 1 IRLI3705NPbF 2 IRLI3705NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432

Contextual Info: IRFW/I840A Advanced Power MOSFET FEATURES BV qss = 5 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS= 500V Lower R ^ on) : 0.638 £2 (Typ.)

Contextual Info: PD- 95976 IRFI9Z24GPbF • Lead-Free 1 IRFI9Z24GPbF 2 IRFI9Z24GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFW/I840A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

SEC IRF 640

Contextual Info: IRFW/I840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: PD- 95648 IRFIBE20GPbF • Lead-Free 1 IRFIBE20GPbF 2 IRFIBE20GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432

Contextual Info: PD- 95975 IRFI9Z14GPbF • Lead-Free 1 IRFI9Z14GPbF 2 IRFI9Z14GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432

tr/2088 RGB-5

Abstract: 2088 RGB-5
Contextual Info: REV ISIO NS . RIGHTS RESERVED LTR DESCRIPTION DATE LOGO CHANGE DWN 08MAÏ20I3 TY APVD KZ ~ ïï= 5: Q O', MAT E R I A L S : -HOUSING: HI GH T E MP E R A T U R E NYLON, BLACK, UL 9 4 V - 0 -SHIELD: 0.20mm T H I C K , BRASS P R E P L A T E D WI T H 1 . 2 7 / j m MI N S E M I - B R I G H T

Contextual Info: TLV320AIC3254 Ultra Low Power Stereo Audio Codec With Embedded miniDSP www.ti.com SLAS549A – SEPTEMBER 2008 – REVISED OCTOBER 2008 1 Introduction 1.1 Features 1.2 • • • • • • • • • • • • • • • • • • • • • • •

IRFz44n equivalent

Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Contextual Info: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 95654 IRLI640GPbF • Lead-Free Document Number: 91314 7/26/04 www.vishay.com 1 IRLI640GPbF Document Number: 91314 www.vishay.com 2 IRLI640GPbF Document Number: 91314 www.vishay.com 3 IRLI640GPbF Document Number: 91314 www.vishay.com 4 IRLI640GPbF Document Number: 91314

MOSFET IRFB 630

Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

IRF 042

Abstract: irf 540 mosfet IRL3803 IRLI3803
Contextual Info: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D

IRLIB4343PbF

Contextual Info: PD - 95755 DIGITAL AUDIO MOSFET IRLIB4343PbF Features l l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI

IRF1310N

Abstract: IRF1310n equivalent 4.5V to 100V input regulator
Contextual Info: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD- 95652 IRLI2910PbF • Lead-Free www.irf.com 1 7/26/04 IRLI2910PbF 2 www.irf.com IRLI2910PbF www.irf.com 3 IRLI2910PbF 4 www.irf.com IRLI2910PbF www.irf.com 5 IRLI2910PbF 6 www.irf.com IRLI2910PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

IRL530N

Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V

AIC3253

Abstract: electret condenser microphone preamplifier G016 TLV320AIC3253 cic compensation filters COEF23 25-TAP TLV320AIC3x 311DB 90C52
Contextual Info: TLV320AIC3253 Applications Reference Guide Literature Number: SLAU303 March 2010 2 SLAU303 – March 2010 Submit Documentation Feedback Copyright 2010, Texas Instruments Incorporated Chapter 1 SLAU303 – March 2010 TLV320AIC3253 Overview • • • •

IRFB 630

Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

1530A

Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Contextual Info: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A