I461 Search Results

Contextual Info: “HYUNDAI HY5116400 Series 4M x 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

a12ca

Contextual Info: this is a partial data sheet. F o r com plete data sheet, see Section 8, M odules. _ CYM1461 SEMICONDUCTOR 512K x 8 Static RAM Module Features Functional Description • High-density 4-megabit SRAM module T h e C Y M 1461 is a high-perform ance

Contextual Info: Februaiy 1997 1 % , M ic r o PRELIMINARY lin e a r M L4 6 1 OR, M L 4 6 1 1 R 5 V , 2 - , 4 - C h a n n e l T h in - F ìlm R e a d / W r it e C i r c u i t GENERAL DESCRIPTION FEATURES The M L4610R /4611R is a bipolar monolithic react/write circuit designed for use with two-terminal thin-film

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

49mhz transmitter

Abstract: TK14617 TK14617M mfp8 49mhz KV1832C KVI832C ft46 33OHM toko APPLICATION NOTE
Contextual Info: A PPLICATION M ANUAL TK14617M TK14617M TENTATI VE TK14617 is the tran sm itte r IC, developed for USA CLP. TK14617 is the very convenient IC, TX power program m able, excellent C/N, battery save function, very sm all package, very few external parts, etc.

ISL6258

Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90