I36 MARKING Search Results

T85 Slide Switch

Abstract: SPDT Slide Switch SS VDE T85 Switch
Contextual Info: C&K V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available Typical Applications • Appliances Models Available

Contextual Info: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances

T85 Slide Switch

Abstract: V80212MA08Q V80212SS05Q I36 MARKING 115V-230V
Contextual Info: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances

T85 Slide Switch

Abstract: 115V-230V
Contextual Info: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances

T85 Switch

Contextual Info: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances

T85 Slide Switch

Abstract: T85 Switch
Contextual Info: V Series Power & Line Voltage Select Slide Switches Features/Benefits • Ratings up to 10 AMPS • Snap-in panel and PC mounting • Actuators with screwdriver slot • Quick connect terminals available • RoHS compliant Typical Applications • Appliances

Contextual Info: Schottky Barrier Diode Twin Diode W tm D5SC4MR OUTLINE 40V 5A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P r r s m Rating • Full Molded • 71 [ Æ - J U K Main Use • Switching Regulator • D C /D C U V A ' - S 7

SC-89-6

Abstract: AN1030 FDY6342L SC89 SC89-6
Contextual Info: FDY6342L tm Integrated Load Switch Features General Description „ Max rDS on = 0.5 Ω at VGS = 4.5 V, ID = –0.83 A This device is particularly suited for compact power management in portable electronic equipment where 2.5 V to 8 V input and 0.83 A output current capability are needed. This

Contextual Info: FDN5632N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98mΩ Features Applications „ RDS on = 98mΩ at VGS = 4.5V, ID = 1.6A „ DC/DC converter „ RDS(on) = 82mΩ at VGS = 10V, ID = 1.7A „ Motor Drives „ Typ Qg(TOT) = 9.2nC at VGS = 10V

Contextual Info: FDN5632N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98mΩ Features Applications „ RDS on = 98mΩ at VGS = 4.5V, ID = 1.6A „ DC/DC converter „ RDS(on) = 82mΩ at VGS = 10V, ID = 1.7A „ Motor Drives „ Typ Qg(TOT) = 9.2nC at VGS = 10V

FDMA1027P

Abstract: I36 MARKING
Contextual Info: FDMA1027P Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state

fdh5500

Abstract: FDH5500_F085 I36 MARKING TB334
Contextual Info: FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features Applications „ Typ rDS on = 5.2mΩ at VGS = 10V, ID = 75A „ DC Linear Mode Control „ Typ Qg(10) = 118nC at VGS = 10V „ Solenoid and Motor Control „ Simulation Models „ Switching Regulators

Contextual Info: FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ Features Applications ̈ Typ rDS on = 5.2mΩ at VGS = 10V, ID = 75A ̈ DC Linear Mode Control ̈ Typ Qg(10) = 118nC at VGS = 10V ̈ Solenoid and Motor Control ̈ Simulation Models ̈ Switching Regulators

600v 30a IGBT

Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating
Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

Contextual Info: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET

Contextual Info: FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has

FDY102

Contextual Info: Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

FDMA1027PT

Contextual Info: FDMA1027PT tm Dual P-Channel PowerTrench MOSFET –20 V, –3 A, 120 mΩ Features General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent

MARKING WL

Abstract: FDZ391P
Contextual Info: FDZ391P P-Channel 1.5 V PowerTrench Thin WL-CSP MOSFET -20 V, -3 A, 85 mΩ Features tm General Description „ Max rDS on = 85 mΩ at VGS = -4.5 V, ID = -1 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "low pitch" Thin WLCSP packaging process,

sC89-6

Abstract: FDY1002PZ SC89
Contextual Info: Dual P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

FDD6770A

Abstract: I36 MARKING
Contextual Info: FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has

FDFMA2P853

Contextual Info: FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET