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    I23-0 Search Results

    I23-0 Datasheets (21)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    I2308
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 79.13KB 1
    badge SI2302CDS-T1-GE3
    VBsemi Electronics Co Ltd N-Channel 20 V MOSFET in SOT-23 package with 0.028 ohm RDS(on) at 4.5 V VGS, 6 A continuous drain current, and 8.8 nC gate charge, suitable for DC/DC converters and load switches. Original PDF
    badge SI2302
    Shenzhen Heketai Electronics Co Ltd N-channel MOSFET in SOT-23 package with 20V drain-source voltage, 3A continuous drain current, and 60mΩ on-resistance at 4.5V gate-source voltage, suitable for low power DC-DC converters and load switch applications. Original PDF
    badge SI2308
    Shenzhen Heketai Electronics Co Ltd N-channel low voltage MOSFET in SOT-23 package with 60V drain-source voltage, 160mΩ on-resistance at VGS=10V, 3A continuous drain current, and suitable for DC-DC converters and load switch applications. Original PDF
    badge SI2301
    Shenzhen Heketai Electronics Co Ltd P-channel low-voltage MOSFET in SOT-23 package with drain-source voltage rating of -20V, on-resistance up to 85mΩ at VGS=-4.5V, ID=-3A, suitable for DC-DC converters and load switches. Original PDF
    badge SI2305CDS-T1-GE3
    VBsemi Electronics Co Ltd P-Channel 20-V, 5-A, 35-mΩ MOSFET in SOT-23 package with 10 nC gate charge, suitable for load switches, PA switches, and DC/DC converters. Original PDF
    badge SI2301DS-T1-GE3
    VBsemi Electronics Co Ltd P-Channel 20V -5A MOSFET in SOT-23 package with RDS(on) of 35mΩ at VGS = -10V, featuring trench technology, suitable for load switches, PA switches, and DC/DC converters. Original PDF
    badge SI2305
    Shenzhen Heketai Electronics Co Ltd P-channel MOSFET in SOT-23 package with -20V drain-source voltage, -5A continuous drain current, and 42mΩ on-resistance at -4.5V gate-source voltage, suitable for DC-DC converters and load switch applications. Original PDF
    badge SI2300
    Shenzhen Heketai Electronics Co Ltd N-channel low voltage MOSFET in SOT-23 package with 20V drain-source voltage, 3.8A continuous drain current, and 40mΩ on-resistance at 4.5V gate-source voltage, suitable for DC-DC converters and load switch applications. Original PDF
    badge SI2303
    Shenzhen Heketai Electronics Co Ltd P-channel MOSFET in SOT-23 package with -30V drain-source voltage, -1.9A continuous drain current, and low on-resistance of 190mΩ at VGS=-10V, suitable for low power DC-DC converters and load switch applications. Original PDF
    badge SI2304
    Shenzhen Heketai Electronics Co Ltd N-channel low voltage MOSFET in SOT-23 package with 30V drain-source voltage, 60mΩ on-resistance at 10V VGS, 3.3A continuous drain current, and 0.35W power dissipation. Original PDF
    badge SI2309CDS-T1-GE3
    VBsemi Electronics Co Ltd P-Channel 60-V (D-S) MOSFET with -5.2 A continuous drain current, 0.04 ohm drain-source on-state resistance at VGS = -10 V, 12 nC gate charge, and 175 °C maximum operating temperature in a SOT-23 package. Original PDF
    badge SI2302DS-T1-GE3
    VBsemi Electronics Co Ltd N-Channel 20 V MOSFET in SOT-23 package with 0.028 ohm RDS(on) at 4.5 V VGS, 6 A continuous drain current, and 8.8 nC gate charge, suitable for DC/DC converters and load switches. Original PDF
    badge SI2305ADS-T1-GE3
    VBsemi Electronics Co Ltd P-Channel 20-V, 5-A MOSFET in SOT-23 package with RDS(on) of 35 mΩ at VGS = -10 V, designed for load switch, PA switch, and DC/DC converter applications. Original PDF
    badge SI2301BDS-T1-GE3
    VBsemi Electronics Co Ltd P-Channel 20V -5A MOSFET in SOT-23 package with RDS(on) of 0.035 ohm at VGS = -10V, featuring trench technology and suitable for load switches, PA switches, and DC/DC converters. Original PDF
    badge SI2307
    Shenzhen Heketai Electronics Co Ltd P-channel MOSFET in SOT-23 package with -30V drain-source voltage, -2.7A continuous drain current, and 88mΩ on-resistance at -10V gate-source voltage, suitable for DC-DC converters and load switch applications. Original PDF
    badge SI2305DS-T1-GE3
    VBsemi Electronics Co Ltd P-Channel 20-V, 5-A, 0.035-ohm MOSFET in SOT-23 package with 10 nC gate charge, suitable for load switches, PA switches, and DC/DC converters. Original PDF
    badge SI2308DS-T1-GE3
    VBsemi Electronics Co Ltd N-Channel 60-V MOSFET with 4.0 A continuous drain current, 0.085 ohm RDS(on) at VGS = 10 V, 2.1 nC gate charge, and SOT23 package, suitable for battery switch and DC/DC converter applications. Original PDF
    badge SI2300DS-T1-GE3
    VBsemi Electronics Co Ltd N-Channel 20 V MOSFET in SOT-23 package with RDS(on) of 0.028 ohm at VGS = 4.5 V, continuous drain current of 6 A, and gate charge of 8.8 nC, suitable for DC/DC converters and load switch applications. Original PDF
    badge SI2309
    Shenzhen Heketai Electronics Co Ltd P-channel MOSFET with -60V drain-source voltage, -1.6A continuous drain current, and low on-resistance of 345mΩ at VGS=-10V, available in SOT-23 surface mount package. Original PDF
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    I23-0 Price and Stock

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    Vishay Intertechnologies SI2302CDS-T1-E3

    MOSFET N-CH 20V 2.6A SOT23-3
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    Vishay Intertechnologies SI2301CDS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    DigiKey () SI2301CDS-T1-BE3 Cut Tape 11,814 1
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    Vishay Intertechnologies SI2302DDS-T1-GE3

    MOSFET N-CH 20V 2.9A SOT23-3
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    DigiKey () SI2302DDS-T1-GE3 Digi-Reel 3,470 1
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    SI2302DDS-T1-GE3 Cut Tape 3,470 1
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    SI2302DDS-T1-GE3 Tape & Reel 3,000 3,000
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    Mouser Electronics SI2302DDS-T1-GE3 224,384
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    Newark SI2302DDS-T1-GE3 Bulk 6,804 5
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    TME SI2302DDS-T1-GE3 6,396 1
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    EBV Elektronik SI2302DDS-T1-GE3 384,000 47 Weeks 3,000
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    Vishay Intertechnologies SI2302CDS-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
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    SI2302CDS-T1-BE3 Tape & Reel 3,000 3,000
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    Mouser Electronics SI2302CDS-T1-BE3 111,391
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    PUI Audio AI-2304-TF-LW120-5V-R

    BUZZER MAGN 4.5V 32X17MM FLANGE
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