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I2308
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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SI2302CDS-T1-GE3
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VBsemi Electronics Co Ltd
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N-Channel 20 V MOSFET in SOT-23 package with 0.028 ohm RDS(on) at 4.5 V VGS, 6 A continuous drain current, and 8.8 nC gate charge, suitable for DC/DC converters and load switches. |
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SI2302
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Shenzhen Heketai Electronics Co Ltd
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N-channel MOSFET in SOT-23 package with 20V drain-source voltage, 3A continuous drain current, and 60mΩ on-resistance at 4.5V gate-source voltage, suitable for low power DC-DC converters and load switch applications. |
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SI2305CDS-T1-GE3
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VBsemi Electronics Co Ltd
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P-Channel 20-V, 5-A, 35-mΩ MOSFET in SOT-23 package with 10 nC gate charge, suitable for load switches, PA switches, and DC/DC converters. |
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SI2301
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Shenzhen Heketai Electronics Co Ltd
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P-channel low-voltage MOSFET in SOT-23 package with drain-source voltage rating of -20V, on-resistance up to 85mΩ at VGS=-4.5V, ID=-3A, suitable for DC-DC converters and load switches. |
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SI2308
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Shenzhen Heketai Electronics Co Ltd
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N-channel low voltage MOSFET in SOT-23 package with 60V drain-source voltage, 160mΩ on-resistance at VGS=10V, 3A continuous drain current, and suitable for DC-DC converters and load switch applications. |
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SI2305
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Shenzhen Heketai Electronics Co Ltd
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P-channel MOSFET in SOT-23 package with -20V drain-source voltage, -5A continuous drain current, and 42mΩ on-resistance at -4.5V gate-source voltage, suitable for DC-DC converters and load switch applications. |
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SI2301DS-T1-GE3
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VBsemi Electronics Co Ltd
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P-Channel 20V -5A MOSFET in SOT-23 package with RDS(on) of 35mΩ at VGS = -10V, featuring trench technology, suitable for load switches, PA switches, and DC/DC converters. |
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SI2300
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Shenzhen Heketai Electronics Co Ltd
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N-channel low voltage MOSFET in SOT-23 package with 20V drain-source voltage, 3.8A continuous drain current, and 40mΩ on-resistance at 4.5V gate-source voltage, suitable for DC-DC converters and load switch applications. |
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SI2304
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Shenzhen Heketai Electronics Co Ltd
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N-channel low voltage MOSFET in SOT-23 package with 30V drain-source voltage, 60mΩ on-resistance at 10V VGS, 3.3A continuous drain current, and 0.35W power dissipation. |
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SI2303
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Shenzhen Heketai Electronics Co Ltd
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P-channel MOSFET in SOT-23 package with -30V drain-source voltage, -1.9A continuous drain current, and low on-resistance of 190mΩ at VGS=-10V, suitable for low power DC-DC converters and load switch applications. |
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SI2302DS-T1-GE3
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VBsemi Electronics Co Ltd
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N-Channel 20 V MOSFET in SOT-23 package with 0.028 ohm RDS(on) at 4.5 V VGS, 6 A continuous drain current, and 8.8 nC gate charge, suitable for DC/DC converters and load switches. |
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SI2309CDS-T1-GE3
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VBsemi Electronics Co Ltd
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P-Channel 60-V (D-S) MOSFET with -5.2 A continuous drain current, 0.04 ohm drain-source on-state resistance at VGS = -10 V, 12 nC gate charge, and 175 °C maximum operating temperature in a SOT-23 package. |
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SI2305ADS-T1-GE3
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VBsemi Electronics Co Ltd
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P-Channel 20-V, 5-A MOSFET in SOT-23 package with RDS(on) of 35 mΩ at VGS = -10 V, designed for load switch, PA switch, and DC/DC converter applications. |
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SI2301BDS-T1-GE3
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VBsemi Electronics Co Ltd
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P-Channel 20V -5A MOSFET in SOT-23 package with RDS(on) of 0.035 ohm at VGS = -10V, featuring trench technology and suitable for load switches, PA switches, and DC/DC converters. |
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SI2307
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Shenzhen Heketai Electronics Co Ltd
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P-channel MOSFET in SOT-23 package with -30V drain-source voltage, -2.7A continuous drain current, and 88mΩ on-resistance at -10V gate-source voltage, suitable for DC-DC converters and load switch applications. |
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SI2305DS-T1-GE3
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VBsemi Electronics Co Ltd
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P-Channel 20-V, 5-A, 0.035-ohm MOSFET in SOT-23 package with 10 nC gate charge, suitable for load switches, PA switches, and DC/DC converters. |
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SI2308DS-T1-GE3
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VBsemi Electronics Co Ltd
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N-Channel 60-V MOSFET with 4.0 A continuous drain current, 0.085 ohm RDS(on) at VGS = 10 V, 2.1 nC gate charge, and SOT23 package, suitable for battery switch and DC/DC converter applications. |
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SI2300DS-T1-GE3
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VBsemi Electronics Co Ltd
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N-Channel 20 V MOSFET in SOT-23 package with RDS(on) of 0.028 ohm at VGS = 4.5 V, continuous drain current of 6 A, and gate charge of 8.8 nC, suitable for DC/DC converters and load switch applications. |
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SI2306
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Shenzhen Heketai Electronics Co Ltd
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N-channel low voltage MOSFET in SOT-23 package with 30V drain-source voltage, 3.6A continuous drain current, and 35mΩ on-resistance at 10V gate-source voltage. |
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SI2302CDS-T1-GE3
