I102I Search Results

Contextual Info: CA3146, CA3146A, CA3183, CA3183A HARRIS S E M I C O N D U C T O R August 1996 High-Voltage Transistor Arrays Features Description • Matched General Purpose Transistors - V qe M atch. ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)

CA3045

Abstract: CA3046 equivalent ca301b CA3046 Harris CA3046 CA3046M
Contextual Info: rp CA3045, CA3046 H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays M arch 1993 Features Description • Two Matched Transistors: V BE Matched ±5mV; Input Offset Current 2 iA Max at lc = 1mA T h e C A 3 0 4 5 and C A 3 0 4 6 each consist of five general

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

UA317

Abstract: Fairchild dtl catalog free transistor equivalent book 2sc lm741 MA339PC MA725HM MA7805KM UA759 gi 9640 diod MA4136PC
Contextual Info: $9.9! •— r c m m pq, F A IR C H IL D A S chlum berger C om pany Linear Data Book Linear Division Introduction The Linear Data Book includes the standard linear product line plus our new W inchester Disk Drive circuits and CLASIC standard cells. For ease o f reference linear

lm3086

Contextual Info: LM3045/LM3046/LM3086 & National Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally

Contextual Info: ß Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five gen­ eral purpose silicon NPN transistors on a common mono­ lithic substrate. Two of the transistors are internally con­