I08 MARKING Search Results

24E166

Abstract: E141-E142 GDIP1-T16 E74-E75 E137-E138 220 e78
Contextual Info: INCH-POUND MIL-M-38510/113B 21 June 2005 SUPERSEDING MIL-M-38510/113A 10 February 2005 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, 8 BIT, DIGITAL-TO-ANALOG CONVERTERS, MONOLITHIC SILICON This specification is approved for use by all Departments and Agencies of the Department of Defense.

top247

Abstract: E36 core 067.043 TOP247-230V K2006 K2006 Kaschke kaschke SP-E 16 MAX39 kaschke bv STOP247-15V-67W
Contextual Info: Technical Data Sheet Customer: Part designation: Customer part no.: Kaschke Göttingen SP-E 36/11 STOP247-15V-67W max.37,5 d:/bv/067024.dwg 8 EIII EIII 1 max.39 AIII AIII 0,7 9 35±0,3 AI EI AIV EIV EII AII a. WS rechts 16 30±0,3 6 WI ½ prim 3,5±0,5 max.31

Contextual Info: NOTES: 1. MATERIAL NUMBER, BATCH CODE, UL CSA MARKING TO BE PRINTED ON THE CONNECTOR AS PER E -3 6 5 0 2 -0 0 5 2. PRODUCT SPECIFICATION PS:85013-001 3. PACKING SPECIFICATION PK: 36512-001 4. CUT FACES OF TIP WITHOUT PLATING IS PERMITTED 5. REFERENCE AREA OF PLATING

n-channel JFET sot23

Abstract: Capacitance j107 S 5018 J108 J108-110 J110 SST108 SST109 SST109-110 SST110
Contextual Info: N-Channel JFET Switch CORPORATION J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver Fast Switching

Contextual Info: DATA SHEET M FC" / _/ MOS INTEGRATED CIRCUIT ¿¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K WORDS BY 16 BITS Description The /iPD482444 and ¿i PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262,144 words x 16 bits memory cell array structure. The serial access port can perform

Contextual Info: N-Channel JFET Switch LLC J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver Fast Switching Low Noise

HPG800

Abstract: 1854a
Contextual Info: Ordering n u m b e r:EN 1854A No.1854A _ 2SC3661 NPN Epitaxial Planar Silicon Transistor High h/pE, Low-Frequency General-Purpose Amp Applications Applications . Low frequency general-purpose amplifiers, drivers, muting circuit Features . Very small-sized package permitting 2SC366l-used sets to be made smaller,

LPC47B34X

Abstract: 8042 keyboard and mouse ner en8 gp77
Contextual Info: LPC47B34X STANDARD MICROSYSTEMS CORPORATION 128 Pin Enhanced Super I/O Controller with LPC Interface for Consumer Applications FEATURES 3.3 Volt Operation 5V Tolerant LPC Interface Floppy Disk Controller (Supports 2 FDCs) Multi-Mode Parallel Port Two Full UARTs

z046

Abstract: 172B 2N1854
Contextual Info: ~L-S-19500/ 172B NAVY 20 November 1968 SUPERSEDING MIL-s-19500/ 172A(NAVY) 180ctober 1961 NffLITARY SEMICONDUCTOR DEVSCE, SPEC1F1CATION TRANSISTOR, PNP, GERMANfUM, TYPE 2N1854 1. SCOPE 1.1 scope. tt-ansisto=i. This ape.ification covers the detail requirements

ED1913

Abstract: GM300 GM3002A-HYB GP520A GP521 TR-15 microphone preamp agc I08 Marking
Contextual Info: MAESTRO I Programmable Hybrid GM3002A-HYB DATA SHEET FEATURES DESCRIPTION • programmable parameters - gain - low pass filter - high pass filter - AGC threshold - release time - MPO - receiver bias current • fixed attack time • typical gain 60 dB • voltage drive output stage

LMM 2057

Abstract: t3hs marking ADMI 2SC3142 high power amp 100mhz 1w
Contextual Info: imQlh 22E D SA NY O S E M I C O N D U C T O R CORP OOOLTSl 0 T-3HS 2SC3142 N P N Epitaxial Plan ar S ilic o n T ransistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .

T3HS

Contextual Info: SANYO SEMICONDUCTOR 22E CORP im Q lh D OOOLTSl T-3HS 2SC3142 N PN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 1066A Features . FBET s e r i e s . . C o m p a c t p a c k a g e e n a b l i n g c o m p a c tn e s s o f s e t s .

54175

Abstract: 2080-LC20-20QBB
Contextual Info: User Manual Micro820 Programmable Controllers Catalog Numbers 2080-LC20-20QWB, 2080-LC20-20QBB, 2080-LC20-20AWB, 2080-LC20-20QWBR, 2080LC20-20QBBR, 2080-LC20-20AWBR Important User Information Solid-state equipment has operational characteristics differing from those of electromechanical equipment. Safety

Contextual Info: HY62SF16404D Series 256K x 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62SF16404D is a high speed, super low power and 4Mbit full CM O S SRAM organized as 256K words by 16bits. The HY62SF16404D uses high performance full CM O S process technology

HYUF6404D

Abstract: HYUF6404
Contextual Info: H Y 6 2U F 1 640 4D S eries 2 56K X 16bit full C M O S SRAM Preliminary DESCRIPTION FEATURES The HY62UF16404D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16404D uses high performance full CMOS process technology

Contextual Info: HY62SF16406D Series 256K x 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62SF16406D is a high speed, super low power and 4Mbit full CM O S SRAM organized as 256K words by 16bits. The H Y62SF16406D uses high performance full CM O S process technology

d482445

Abstract: UPD482445 D482444 MPD482445GW-60
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿PD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT Description The /¿PD482444 and ¿¿PD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock

Contextual Info: H Y 6 2Q F 164 04 C S eries 256K X 16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16404C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16404C uses high performance full CMOS process technology and is designed for high speed and low power

marking 1bc

Contextual Info: HY62QF16406D Series 256K x 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HV62QF16406D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16406D uses high performance full CMOS process technology

kor 2001

Contextual Info: H Y 6 2Q F 164 06 C Series 256K X 16bit full CMOS SRAM DESCRIPTION FEATURES The H Y62Q F16406C is a high speed, super low power and 4Mbit full CM O S SRAM organized as 256K words by 16bits. The HY62Q F16406C uses high performance full CM O S process technology

HYUF6406C

Abstract: 6406C
Contextual Info: H Y 6 2U F 1 640 6C S eries 256K X16bit full CMOS SRAM DESCRIPTION FEATURES The H Y62UF16406C is a high speed, super low power and 4M bit full CM O S SRAM organized as 256K w ords by 16bits. The HY62UF16406C uses high perform ance full CM OS process technology

Contextual Info: sirice LPC47S42X STANDARD MICROSYSTEMS CORPORATION Enhanced Super I/O Controller with LPC Interface for Server Applications FEATURES 3.3 Volt Operation 5V Tolerant Floppy Disk Controller (Supports Two FDCs) Multi-Mode Parallel Port Two UARTs 8042 Keyboard Controller

Contextual Info: HY62UF16404C Series 256K x16bit full CMOS SRAM DESCRIPTION FEATURES T h e H Y 6 2 U F 1 6 4 0 4 C is a high speed, super low pow er and 4M bit full C M O S S R A M organized as 2 5 6 K words by 16bits. T h e H Y 6 2 U F 1 6 4 0 4 C uses high perform ance full C M O S process technology

NR 9600

Contextual Info: LPC47B37X STANDARD MICROSYSTEMS CORPORATION 100 Pin Enhanced Super I/O for LPC Bus with SMBus Controller for Commercial Applications FEATURES 3.3 Volt Operation 5V Tolerant Floppy Disk Controller (Supports 2 FDCs) Multi-Mode Parallel Port Two UARTs 8042 Keyboard Controller