I/SOT23 JEDEC STANDARD 178 AB Search Results

Contextual Info: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic

Contextual Info: CM1218 Low Capacitance Transient Voltage Suppressors / ESD Protectors Description The CM1218 family of devices features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which may be subjected to electrostatic

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

DVD player with usb circuit diagram

Abstract: 320 sot236 CM1223-04SO Marking L2 Packaging SOT23-6 d337 diode marking L2 SOT23 6 zener D335 A0 SOT23-6
Contextual Info: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting

Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

1937 sot23

Contextual Info: DBV 6 DBV 5 YEQ, YZQ TPS793xx www.ti.com SLVS348K – JULY 2001 – REVISED OCTOBER 2007 ULTRALOW-NOISE, HIGH PSRR, FAST RF 200mA LOW-DROPOUT LINEAR REGULATORS IN NanoStar WAFER CHIP SCALE AND SOT23 FEATURES DESCRIPTION 1 • 200mA RF Low-Dropout Regulator

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor bel 100

Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Contextual Info: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

zener D335

Abstract: Marking L2 Packaging SOT23-6 Marking X1 SOT23-6 X130 SOT23-5 marking L2 SOT23-6 Zener diode sot23-5 sot23-6 marking code 013 Marking L2 Packaging SOT23-5
Contextual Info: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting

zener D335

Contextual Info: CM1223 Industry First Low Capacitance ESD Protection Arrays with Backdrive Protection Product Description http://onsemi.com The CM1223 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

712 DIODE marking sot23

Abstract: 712 SOT23
Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications RoHS compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode

TVS SOT23 712

Abstract: CDSOT23-SM712 712 sot23
Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications RoHS compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode

CDSOT23-SM712

Abstract: 712 sot23
Contextual Info: PL IA NT CO M *R oH S Features • ■ ■ ■ Applications RoHS Compliant* Working peak voltage 7 V or 12 V ESD protection 30 kV max. Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 — Surface Mount TVS Diode

bel 188 transistor

Abstract: MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D
Contextual Info: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

TVS SOT23 712

Abstract: 712 DIODE marking sot23 SM712 CDSOT23-SM712 712 sot23
Contextual Info: PL IA NT CO M *R oH S Features • ■ ■ ■ Applications RoHS Compliant* Working peak voltage 7 V or 12 V ESD protection >40 kV Surge protection ■ ■ ■ ■ Wireless systems Network protection Portable electronics RS485 port protection CDSOT23-SM712 – Surface Mount TVS Diode

Contextual Info: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

bel 188 transistor

Abstract: SOT23 1128 of bel 188 transistor
Contextual Info: MMBTA28 PZTA28 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 3SS NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* Symbol

bel 188 transistor

Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Contextual Info: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

MPSA56

Abstract: bel 188 transistor pnp 4963N CBVK741B019 F63TNR MMBTA56 PN2222N PZTA56
Contextual Info: MMBTA56 PZTA56 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

CBVK741B019

Abstract: F63TNR MMBTA42 MPSA42 PN2222N PZTA42
Contextual Info: MMBTA42 PZTA42 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings*

sot 223 fairchild

Abstract: sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92
Contextual Info: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

ic 3843

Abstract: PZTA06 SOT-223 CBVK741B019 F63TNR MMBTA06 MPSA06 PN2222N PZTA06 SOT23 JEDEC standard orientation pad size MPSA06 fairchild transistor
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Marking L2 Packaging SOT23-6

Abstract: L242 TOP marking sot23-6 MARKING X1 SOT23-6 20 sot23-6 esd marking L2 SOT23 6 L242 3000 L243 marking L2 SOT23-6 X1 SOT23-6
Contextual Info: CM1224 2 and 4-Channel Low Capacitance ESD Protection Arrays Product Description The CM1224 family of diode arrays has been designed to provide ESD protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting