HZS20L Search Results

HZS18L

Abstract: HZS13E HZS13J HZS13N HZS15 HZS15E HZS15J HZS15L HZS15N HZS16
Contextual Info: - 236- "J ^ i - M ñ £ £ tt £ p Vz V Iz tV L * f h AUVc Vz n iSÎÆ Zzkinax h ë B Zzniax f U m ax o i © ÍÍ ft 1 m (mW) (•A) m in ty p mav. Iz(m A ) (0 ) 12 <raA) (f l) Iz (w A ) (% /°C ) ( ß A) Vr (V) 0. 0. 0. ÎL i i i 400 400 400 400 400

diode zener mark C2 6

Abstract: HZS7L diode HZS11L A2 zener diode C2 6 zener diode ADE-208-121A B1 6 zener HZS7LA1 Zener Diode C3 4 5.6 B1 zener diode
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev 1 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

do-34 302 zener diode

Abstract: 5.6 B1 zener diode HZS6A2L HZS7L A2 zener diode ADE-208-121A zener series RD HZS9B2L zener diode A3 zener mark code C1
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

9.1 b2 diode

Abstract: diode Lz 99
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

6.3 B1 zener diode

Abstract: zener diode B3 B1 6 zener diode ZENER A2 6 HZS7L diode Hitachi DSA002786 a3 7 zener 9.1 b3
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

HZS7L diode

Abstract: HZS6A2L II A2 zener diode c2 zener renesas ADE-208-121A HZS11L BAY 87 diode HZS15L HZS16L HZS20L
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0166-0200Z Previous: ADE-208-121A Rev.2.00 Jan.06.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

marking code 9c diode

Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

HZS6LB2

Abstract: HZS6L
Contextual Info: HZS-L Series Zener Diodes PD : 400 mW DO - 34 Glass Features — — — — High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free Mechanical Data — — Case: DO-34 Glass Case Weight: approx. 0.093g Dimensions in inches and millimeters

Zener Diode C3 5

Abstract: HZS6L HZS7L a1 55 a3 6 zener HZS18L HZS20L Silicones Zener Diode B1 9 HZS11L
Contextual Info: TH97/10561QM HZS-L Series TW00/17276EM IATF 0060636 SGS TH07/1033 ZENER DIODES DO - 34 Glass PD : 400 mW 1.00 25.4 min. 0.078 (2.0 )max. FEATURES : * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 0.118 (3.0)

5.6 B1 zener diode

Abstract: zener diode A3 zener diode 5.6 b3 HZS7L diode A2 zener diode zener diode B2 C2 3 zener diode 6.3 B1 zener diode diode ZENER C2 Zener Diode C3 4
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diodes for Low Noise Application Features • Diode noise level of this series is approximately 1/3—1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation o f400 mW are

zener diode A3

Abstract: C2 3 zener diode HITACHI HZS-L rd 9.1 b2 HZS6L zener Diode B2 diode Lz 99
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

Contextual Info: HZS-L Series ZENER DIODES DO - 34 Glass PD : 400 mW FEATURES : * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA 1.00 (25.4) min.

HZS7L

Abstract: HZS6A2L zener marking hitachi Hitachi DSA0076 ADE-208-121A HZS11L HZS12L HZS15L HZS16L HZS18L
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev 1 Dec. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for