HZM6.8 Search Results

3.5V zener diode

Abstract: ADE-208-442A high speed Zener Diode
Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 Features • • HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information

mark 68

Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-442A Z Rev 1 Features • HZM6.8FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

68A diode

Abstract: Hitachi DSA00776 ADE-208-442A HZM6.8FA
Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 September 1996 Features • • HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.8ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-613A Z Rev 1 Jan. 1999 Features • HZM6.8ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.8ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-614 Z Rev 0 April 1, 1998 Features • HZM6.8ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=25pF max) and can protect ESD of signal line.

monolithic COUNTRY CODE

Contextual Info: HZM6.8Z4MWA Silicon Planar Zener Diode for Surge Absorb REJ03G0369-0100 Rev.1.00 Oct 01, 2004 Features • HZM6.8Z4MWA has two devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF max and can protect ESD of signal line.

Contextual Info: HZM6.8Z4MFA Silicon Planar Zener Diode for Surge Absorb REJ03G0203-0100Z Rev.1.00 Mar.29.2004 Features • HZM6.8Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF max and can protect ESD of signal line.

Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-442A Z Rev 1 September 1996 Features • HZM6.8FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

mark 68m

Abstract: HZM6.8MFA
Contextual Info: HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb REJ03G1209-0200 Previous: ADE-208-833A Rev.2.00 Jun 13, 2005 Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

mark 68m

Abstract: SC-59A
Contextual Info: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb REJ03G1210-0200 Previous: ADE-208-851A Rev.2.00 Jun 13, 2005 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-351 Z Rev. 0 May. 1995 Features • HZM6.8WA has two devices, and can absorb external + and - surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA00359

Contextual Info: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb ADE-208-783A Z Rev 1 Nov. 1999 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

SC-59A

Abstract: Hitachi DSA00359
Contextual Info: HZM6.8ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-613A Z Rev 1 Jan. 1999 Features • HZM6.8ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI A D E -208-442A Z Rev 1 Features • HZM6.8FA has four devices, and can absorb external + and -Surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

mark 68m

Abstract: DSA003644
Contextual Info: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb ADE-208-851A Z Rev.1 Nov. 2001 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information

DSA003643

Contextual Info: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb ADE-208-783A Z Rev. 1 Nov. 1999 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

ADE-208-442A

Abstract: Hitachi DSA00359
Contextual Info: HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A Z Rev 1 September 1996 Features • HZM6.8FA has four devices, and can absorb external + and -surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HZM6.8ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-614A Z Rev 1 Dec. 1, 1998 Features • HZM6.8ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=25pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA00359

Abstract: HZM6.8MFA
Contextual Info: HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb ADE-208-833 Z Rev 0 Dec. 1999 Features • HZM6.8MFA has four devices in a monolithic, and can absorb surge. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information

hzm6.8z4mfa

Contextual Info: HZM6.8Z4MFA Silicon Planar Zener Diode for Surge Absorb REJ03G0203-0100Z Rev.1.00 Mar.29.2004 Features • HZM6.8Z4MFA has four devices in a monolithic, and can absorb surge. • Low capacitance C = 4.0 pF Typ / 4.5 pF max and can protect ESD of signal line.

Contextual Info: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Features Rev. 0 May. 1995 Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA00280

Contextual Info: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb ADE-208-783B Z Rev.2 Nov. 2001 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: ADE-208-351 Z HZM6.8WA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI Features Rev. 0 May. 1995 Outline • HZM6.8WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb REJ03G1211-0300 Previous: ADE-208-783B Rev.3.00 Jun 14, 2005 Features • HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. • Low capacitance (C = 25 pF max) and can protect ESD of signal line.