HYB0900 Search Results

Contextual Info: Control No. Tentative Specification Preliminary 1. 900MHz Band 90deg Chip Hybrid Coupler TYPE No: HGC5021-HYB0900S RoHS correspondence article 0.3 2 1 2 0.5 G G 021 4.5 1.2 G G G G 1.2 G HGC-5021-B Established on Mar 27, 2013 2. Appearance and Construction

Contextual Info: Control No. Product Information : GSC-0552-K Established on Aug 24, 2011 1. 900MHz Band 90deg Chip Hybrid Coupler TYPE No: GSC552-HYB0900A RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 3.2 1 0.3 1 2 2 1.2 0.5 G H52 G 4.5

Contextual Info: Tentative Specification Preliminary Control No. : HGC-03062-C Established on Jun 19, 2013 1. 900MHz Band 90deg Chip Hybrid Coupler 1.1 TYPE No. : HGC3062-HYB0900 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension (Unit: mm) 0.4 5.0

GSC362

Abstract: soshin GSC362-HYB0900
Contextual Info: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC362-HYB0900 800MHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC362-HYB0900 Impedance 50 ohm Nominal Frequency Range 815-960MHz

hybrid coupler 3dB 90

Contextual Info: Control No. Product Information : GSC-0552-K Established on Aug 24, 2011 1. 900MHz Band 90deg Chip Hybrid Coupler TYPE No: GSC552-HYB0900A RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 3.2 1 0.3 1 2 2 1.2 0.5 G H52 G 4.5

GSC262-HYB0900

Abstract: GSC262 soshin
Contextual Info: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC262-HYB0900 900MHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC262-HYB0900 Impedance 50 ohm Nominal Frequency Range 815-960MHz

Contextual Info: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage

SEMICONDUCTOR J601

Abstract: Soshin GSC362 J295 A114 A115 AN1977 AN1987 C101 JESD22 MDE6IC9120GNR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage