HY57V651620A
Abstract: hy57v651620atc-10s HY57V651620ATC10P
Contextual Info: HY57V651620A 4 Banks x 1M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620A is organized as 4banks of
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Original
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HY57V651620A
HY57V651620A
864-bit
576x16.
400mil
54pin
hy57v651620atc-10s
HY57V651620ATC10P
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PDF
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KM48S8030BT-GL
Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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Original
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PC100
KM48S8030BT-GL
nn5264805tt-b60
KM48S2020CT-GL
0364804CT3B-260
d4564163g5
nt56v1680a0t
D4564841g5
81F641642B-103FN
M5M4V16S30DTP
Siemens 9832
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PDF
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KM416S4030BT-G10
Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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Original
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PC100
KM416S4030BT-G10
KM48S2020CT-GL
81F641642B-103FN
d4564163g5
S9745-M06
M5M4V16S30DTP
gm72v661641ct7j
D4564163G5-A10-9JF
D4516821AG5
D4516821
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PDF
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HY57V651620A
Abstract: 54PIN HY57V651620ATC-10S
Contextual Info: HY57V651620A 4 Banks x 1M x 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V651620A is organized as 4banks of
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Original
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HY57V651620A
HY57V651620A
864-bit
576x16.
1SE33-11-MAR98.
400mil
54pin
HY57V651620ATC-10S
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PDF
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T211T
Abstract: nkl capacitor
Contextual Info: -'MYUH DAI -• HY57V651620A 4 Banks x 1M x 16 B it Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, HY57V651620A is organized as 4banks ot
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OCR Scan
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HY57V651620A
HY57V651620A
864-bit
576x16.
T10iT11
12T13
T17T18T19
T22fTZ.
T211T
nkl capacitor
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KM48S8030BT-GL
Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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Original
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PC100
KM48S8030BT-GL
NT56V1680A0T
D4516821AG5
KM416S4030BT-GL
81f641642b103fn
KM48S2020CT-GL
D4516821AG5-A107JF
gm72v661641ct7j
TC59S6408BFT80
D4564163G5
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PDF
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